Ultraviolet LED element and fabricated method of AlGaN base sapphire substrate
A sapphire substrate and LED device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high light loss, long exit path, and more ultraviolet light absorption in the middle, so as to increase output power, increase exit aperture, The effect of simple process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0045] In the first embodiment, the fabrication of the device of the present invention includes three parts: material growth, window area fabrication, and electrode fabrication.
[0046] 1. Reference figure 2 , The material growth steps are as follows:
[0047] Step 1. On the sapphire substrate, a low-temperature AlN nucleation layer is grown using the MOCVD process.
[0048] The substrate temperature was lowered to 600°C, the growth pressure was maintained at 50 Torr, the hydrogen flow rate was 1500 sccm, and the ammonia flow rate was 1500 sccm. An aluminum source with a flow rate of 23 μmol / min was introduced into the reaction chamber to grow a low-temperature AlN nucleation layer with a thickness of 7 nm.
[0049] Step 2: Growing a high temperature AlN nucleation layer on the low temperature AlN nucleation layer.
[0050] The growth temperature was increased to 1050°C, the growth pressure was maintained at 50 Torr, the hydrogen flow rate was 1500 sccm, and the ammonia flow rat...
Example Embodiment
[0083] In the second embodiment, the fabrication of the device of the present invention includes three parts: material growth, window area fabrication, and electrode fabrication.
[0084] 1. Material growth steps:
[0085] The material growth step is the same as in the first embodiment.
[0086] 2. The device window area is made as image 3 As shown, the specific steps are as follows:
[0087] In the first step, an ICP or RIE process is used to etch the mesa to the n-type AlGaN layer on the p-type GaN riser layer.
[0088] Use electron beam evaporation equipment to deposit SiO with a thickness of about 300nm 2 The layer serves as an etching mask layer. Since the etching rate for AlGaN materials is slow, this step is added to form SiO on the sample 2 The double-layer mask pattern that works together with photoresist is more conducive to protecting the surface of the unetched area;
[0089] Spun the positive glue on the sample at a speed of 5000 revolutions / min, and then bake it in ...
Example Embodiment
[0099] In the third embodiment, the fabrication of the device of the present invention includes three parts: material growth, window area fabrication, and electrode fabrication.
[0100] 1. Material growth steps:
[0101] The material growth step is the same as in the first embodiment.
[0102] 2. The device window area is made as image 3 As shown, the specific steps are as follows:
[0103] In the first step, an ICP or RIE process is used to etch the mesa to the n-type AlGaN layer on the p-type GaN riser layer.
[0104] Use electron beam evaporation equipment to deposit SiO with a thickness of about 300nm 2 The layer serves as an etching mask layer. Since the etching rate for AlGaN materials is slow, this step is added to form SiO on the sample 2 The double-layer mask pattern that works together with photoresist is more conducive to protecting the surface of the unetched area;
[0105] Spun the positive glue on the sample at a speed of 5000 revolutions / min, and then bake it in a...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap