Fabricated method of Ultraviolet LED element with AlGaN base sapphire substrate

A sapphire substrate, LED device technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of long output path, large light loss in the middle, and much ultraviolet light absorption, etc., to improve the output aperture, improve the output power, simple craftsmanship

Active Publication Date: 2011-04-06
XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2004, a 250nm LED was produced. The maximum power of a 200μ×200μ chip is close to 0.6mW, but the external quantum efficiency is only 0.01%.
As the emission wavelength decreases, the bottom buffer layer absorbs more and more ultraviolet light, which seriously affects the output light power and external quantum efficiency.
At present, the quality of the epitaxial layer is mainly improved by improving the structure of the device. However, the existing technology of emitting light from the bottom still has great shortcomings. The external quantum efficiency is too low; the second is that the crystal quality of the bottom AlN buffer layer is poor, resulting in an increase in the non-radiative recombination center of the material, which absorbs more ultraviolet light; the third is that the bottom buffer layer captures photons under the action of electrical stress. Defects increase, seriously affecting the reliability of the device

Method used

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  • Fabricated method of Ultraviolet LED element with AlGaN base sapphire substrate
  • Fabricated method of Ultraviolet LED element with AlGaN base sapphire substrate
  • Fabricated method of Ultraviolet LED element with AlGaN base sapphire substrate

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Embodiment 1

[0044] Embodiment 1, the fabrication of the device of the present invention includes three parts: material growth, window area fabrication and electrode fabrication.

[0045] 1. Reference figure 2 , the material growth steps are as follows:

[0046] In step 1, a low-temperature AlN nucleation layer is grown on a sapphire substrate by MOCVD process.

[0047] The substrate temperature was lowered to 600°C, the growth pressure was maintained at 50Torr, the flow rate of hydrogen gas was 1500 sccm, the flow rate of ammonia gas was 1500 sccm, and the aluminum source with a flow rate of 23 μmol / min was introduced into the reaction chamber to grow a low-temperature AlN nucleation layer with a thickness of 7 nm.

[0048] Step 2, growing a high temperature AlN nucleation layer on the low temperature AlN nucleation layer.

[0049] Raise the growth temperature to 1050°C, keep the growth pressure at 50 Torr, the flow rate of hydrogen gas at 1500 sccm, the flow rate of ammonia gas at 150...

Embodiment 2

[0082] Embodiment 2, the fabrication of the device of the present invention includes three parts: material growth, window area fabrication and electrode fabrication.

[0083] 1. Material growth steps:

[0084] The material growth steps are the same as in the first embodiment.

[0085] 2. The device window area is made as image 3 As shown, the specific steps are as follows:

[0086] The first step is to etch the mesa to the n-type AlGaN layer on the p-type GaN cap layer by using ICP or RIE process.

[0087] Deposit SiO with a thickness of about 300nm using electron beam evaporation equipment 2 layer as an etch mask layer. Due to the slow etch rate of AlGaN material, this step is added to form SiO on the sample 2 The double-layer mask pattern that works together with the photoresist is more conducive to protecting the surface of the unetched area;

[0088] Shake the positive glue on the sample sheet at a speed of 5000 rpm, and then bake it in an oven at a temperature of 9...

Embodiment 3

[0098] Embodiment 3, the fabrication of the device of the present invention includes three parts: material growth, window area fabrication and electrode fabrication.

[0099] 1. Material growth steps:

[0100] The material growth steps are the same as in the first embodiment.

[0101] 2. The device window area is made as image 3 As shown, the specific steps are as follows:

[0102] The first step is to etch the mesa to the n-type AlGaN layer on the p-type GaN cap layer by using ICP or RIE process.

[0103] Deposit SiO with a thickness of about 300nm using electron beam evaporation equipment 2 layer as an etch mask layer. Due to the slow etch rate of AlGaN material, this step is added to form SiO on the sample 2 The double-layer mask pattern that works together with the photoresist is more conducive to protecting the surface of the unetched area;

[0104] Shake the positive glue on the sample sheet at a speed of 5000 rpm, and then bake it in an oven at a temperature of 9...

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Abstract

The invention discloses an ultraviolet LED element and a fabricated method of AlGaN base sapphire substrate, relates to the technical field of microelectronics and mainly solves the problem of low emergent light efficiency. The ultraviolet LED element comprises a low-temperature AlN nucleating layer, a high-temperature AlN nucleating layer, an intrinsic AlGaN epitaxial layer, an n-AlGaN barrier layer, an active zone, a p-AlGaN barrier layer, a low Al component p-type AlGaN layer, a p-type GaN cap layer, and a window zone arranged at the p-type GaN cap layer, which are sequentially arranged from top to bottom. The ultraviolet LED element etches the p-AlGaN cap layer until the p-AlGaN with low Al component by a drying method to form the column emergent light window, and then etches the p-AlGaN cap layer until the p-AlGaN with low Al component by a wetting method so as to change the column emergent light window into a similar hemispheric window, can make the material surface of the window be coarsened while increasing the emergent pore diameter of the window, and greatly improves the power and the efficiency of emergent light. The invention has simple process, good repetitiveness and high reliability, and can be used to occasions of water treatment, medical treatment and biomedicine, and the white light illumination.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a method for realizing a novel AlGaN-based multi-quantum well uv-LED device, which can be used in the fields of water treatment, medical treatment, biomedicine and white light illumination. Background technique [0002] As an outstanding representative of the third-generation semiconductor materials, III-V compound semiconductor materials have many excellent characteristics, especially in optical applications. The alloy {Ga(Al,In)N} composed of Ga, Al, In, N Can cover the entire visible light region and near ultraviolet light region. Moreover, the group III nitrides with wurtzite structure have direct band gaps, which are very suitable for the application of optoelectronic devices. Especially in the ultraviolet region, the AlGaN-based multi-quantum well uv-LED has shown great advantages, and has become one of the hot spots in the de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 郝跃杨凌马晓华周小伟李培咸
Owner XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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