Multiple quantum well uv-LED device on sapphire substrate and manufacturing method

A technology of LED devices and sapphire substrates, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large light loss in the middle, long light exit path, and external quantum efficiency of only 0.01%, so as to improve the output power, The effect of improving the output power and promoting the practical process

Active Publication Date: 2009-08-26
陕西半导体先导技术中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2004, a 250nm LED was produced. The maximum power of a 200μ×200μ chip is close to 0.6mW, but the external quantum efficiency is only 0.01%.
As the emission wavelength decreases, the bottom buffer layer absorbs more and more ultraviolet light, which seriously affects the output light power and external quantum efficiency.
At present, it is mainly to change the structure of the p-type electrode and the structure of the device. The existing technology for emitting light from the bottom still has great shortcomings. The quantum efficiency is too low; the second is that the crystal quality of the bottom AlN buffer layer is poor, resulting in an increase in the non-radiative recombination center of the material, which absorbs more ultraviolet light; the third is the defect that the bottom buffer layer captures photons under the action of electrical stress increase, which seriously affects the reliability of the device

Method used

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  • Multiple quantum well uv-LED device on sapphire substrate and manufacturing method
  • Multiple quantum well uv-LED device on sapphire substrate and manufacturing method
  • Multiple quantum well uv-LED device on sapphire substrate and manufacturing method

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Embodiment 1

[0038] Embodiment 1, the fabrication of the device of the present invention includes two steps of material growth and device fabrication.

[0039] refer to figure 2 , the material growth steps of the present invention are as follows:

[0040] In step 1, a low-temperature AlN nucleation layer is grown on a sapphire substrate by MOCVD process.

[0041] Lower the substrate temperature to 600°C, maintain a growth pressure of 50Torr, flow of hydrogen at 1500sccm, flow of ammonia at 1500sccm, and feed an aluminum source at a flow rate of 28μmol / min into the reaction chamber to grow a low-temperature AlN nucleation layer with a thickness of 5nm.

[0042] Step 2, growing a high temperature AlN nucleation layer on the low temperature AlN nucleation layer.

[0043] Raise the growth temperature to 1050°C, keep the growth pressure at 50 Torr, the flow rate of hydrogen gas at 1500 sccm, the flow rate of ammonia gas at 1500 sccm, and feed the aluminum source with a flow rate of 28 μmol / m...

Embodiment 2

[0073] Embodiment 2, the fabrication of the device of the present invention includes two steps of material growth and device fabrication.

[0074] Wherein the material growth step is identical with embodiment one, as figure 2 shown.

[0075] The device is made as image 3 As shown, the specific steps are as follows:

[0076] The first step is to etch the mesa to the n-type AlGaN layer on the p-type GaN capping layer by using ICP or RIE process.

[0077] Deposit SiO with a thickness of about 300nm using electron beam evaporation equipment 2 layer as an etch mask layer. Due to the slow etch rate of AlGaN material, this step is added to form SiO on the sample 2 The double-layer mask pattern that works together with the photoresist is more conducive to protecting the surface of the unetched area;

[0078] Shake the positive glue on the sample sheet at a speed of 5000 rpm, and then bake it in an oven at a temperature of 90°C for 15 minutes, and form the pattern required for ...

Embodiment 3

[0092] Embodiment 3, the fabrication of the device of the present invention includes two steps of material growth and device fabrication.

[0093] Wherein the material growth step is identical with embodiment one, as figure 2 shown.

[0094] The device is made as image 3 As shown, the specific steps are as follows:

[0095] The first step is to etch the mesa to the n-type AlGaN layer on the p-type GaN capping layer by using ICP or RIE process.

[0096] Deposit SiO with a thickness of about 300nm using electron beam evaporation equipment 2 layer as an etch mask layer. Due to the slow etch rate of AlGaN material, this step is added to form SiO on the sample 2 The double-layer mask pattern that works together with the photoresist is more conducive to protecting the surface of the unetched area;

[0097] Shake the positive glue on the sample sheet at a speed of 5000 rpm, and then bake it in an oven at a temperature of 90°C for 15 minutes, and form the pattern required for ...

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Abstract

The invention discloses a multiple quantum well uv-LED device on a sapphire substrate and a manufacturing method, relating to the technical field of micro-electronics and mainly solving the problem that the uv LED has low light-emitting efficiency. The device comprises a low-temperature AlN nucleating layer, a high-temperature AlN nucleating layer, an intrinsic AlGaN epitaxial layer, an n-AlGaN barrier layer, an active area, a p-AlGaN barrier layer, a low Al component p-shaped AlGaN layer, a p-shaped GaN capping layer and a window area (A) arranged on the p-shaped GaN capping layer from bottom to top in sequence. The device etches the p-GaN capping layer to an electronic p-AlGaN barrier layer by a dry method to form a cylindrical emergent light window, thus changing the path of the emergent light and greatly reducing the loss of light in the process of spread. Due to adopting the dry method to etch the window area, the device coarsens the surface of the electronic p-AlGaN barrier layer at the bottom of the window area, thus further improving the emitting efficiency of the emergent light. The device also has simple process, low cost, good repeatability and high reliability and can be used for water processing, medical treatment, biomedicine occasion and white light illumination.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a method for realizing a novel AlGaN-based multi-quantum well uv-LED device, which can be used in the fields of water treatment, medical treatment, biomedicine and white light illumination. Background technique [0002] As an outstanding representative of the third-generation semiconductor materials, III-V compound semiconductor materials have many excellent characteristics, especially in optical applications. The alloy {Ga(Al,In)N} composed of Ga, Al, In, N Can cover the entire visible light region and near ultraviolet light region. Moreover, the group III nitrides with wurtzite structure have direct band gaps, which are very suitable for the application of optoelectronic devices. Especially in the ultraviolet region, the AlGaN-based multi-quantum well uv-LED has shown great advantages, and has become one of the hot spots in the de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 郝跃杨凌马晓华周小伟李培咸
Owner 陕西半导体先导技术中心有限公司
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