11 results about "Pockels effect" patented technology

The invention relates to an aerosol particle scattering characteristic experimental platform and experimental method based on a Pockels effect, and belongs to the technical field of optical measurement. The experimental platform comprises an optical platform, an aerosol particle transport system, an optical path system and a data processing system, the aerosol particle conveying system comprises a combustion chamber, a dust aerosol generator, a water mist aerosol generator, a pipeline and an aerosol jet hole; the combustion chamber, the dust aerosol generator and the water mist aerosol generator are all placed outside a room where the optical platform is located, and the light path system is placed on the indoor optical platform; all parts of the data processing system are placed inside or on the top of the cabinet, and the cabinet is close to the optical platform. According to the aerosol particle scattering characteristic experiment platform based on the Pockels effect, the electro-optical modulator based on the Pockels effect and the phase-locked demodulation technology are used, the Mueller matrix measurement time can be shortened, and the measurement precision is improved.

A method includes acquiring and characterizing multiple laser beams. The method includes tracking the acquired laser beams. The method includes controlling a beam of the acquired laser beams. The method includes implementing an adaptive learning detection algorithm to identify and track a unique optical signature from at least one of the acquired laser beams. The method includes steering at least one laser beam towards a target based on the acquired laser beams. The method includes changing one or more optical properties of a beam steering unit to steer the at least one laser beam towards the target, including one or more of the following: inducing a Pockels effect on the at least one beam by applying an electric field; tuning Spatial Light Modulators; tuning a metamaterial structure; inducing a diffraction grating; and modifying an output angle of the at least one beam.

The invention concerns a hybrid optical device combining a silicon-on-insulator (SOI) waveguide platform (1) comprising a silicon waveguide (1a) with a thin-film electro-optical (EO) material such as lithium niobate or barium titanate forming a waveguide structure (2). The EO material waveguide structure (2) is bonded in optical contact with the SOI waveguide (1a), and electrodes (6) on its sides enable refractive index modulation via the electro-optical material Pockels effect. A coupling section (7), preferably comprising a tapered SOI waveguide (7a), transfers light between the SOI and EO structures with low loss. The device may include Bragg gratings (4a) or periodically poled sections (4b) in the EO layer for tunable or wavelength-selective modulation. The structure allows fast, reconfigurable light modulation, filtering, and signal routing on a CMOS-compatible platform, suitable for high-speed communication, optical computing, and sensing, offering a compact and efficient electro-optic integration solution.

A photonics device is described. The photonics device includes a plurality of unit cells. Each of the unit cells includes a first portion of a waveguide, an electrode section proximate to the first portion of the waveguide, and an integrated circuit (IC) driver coupled to and configured to drive the electrode section. The unit cells are adjacent and distributed along a second portion of the waveguide. The waveguide includes at least one electro-optic material possessing a Pockels Effect. The waveguide is also configured to carry an optical signal. The IC driver, the electrode section, and the first portion of the waveguide for each of the unit cells are integrated into the photonics device. The unit cells are configured such that the photonics device has a 3 dB bandwidth of at least 70 GHz and the first portion of the waveguide has a length not exceeding five hundred micrometers.

The application discloses a sodium ion conductivity detection system and method based on a taiji-shaped lithium niobate waveguide. The system comprises a lithium niobate film, a taiji-shaped Mach-Zehnder interference waveguide formed on the lithium niobate film, the taiji-shaped Mach-Zehnder interference waveguide comprising an MMI-type beam splitter, a reference arm and a sensing arm symmetrically curved in a taiji shape and an MMI-type beam combiner, and metal electrodes arranged on the sides of the reference arm and the sensing arm respectively. When a sodium ion solution is introduced into a sensing area, the change of the sodium ion solution conductivity changes the local electric field distribution at the electrode-liquid interface, thereby changing the effective modulation voltage of the waveguide of the sensing arm and changing the refractive index of the waveguide of the sensing arm through the Pockels effect to output an interference light intensity change signal, and then the sodium ion solution conductivity to be detected is detected. The application changes the local electric field at the spiral electrode interface and modulates the refractive index of the waveguide by the change of the sodium ion solution conductivity, realizes the output of the interference light intensity change signal, and detects the sodium ion solution conductivity to be detected.

The invention belongs to the technical field of material tribology performance evaluation, and discloses a material tribology Bauschinger effect characteristic evaluation method and system based on molecular dynamics. The method comprises the following steps: on the basis of constructing a molecular dynamics model of a rigid abrasive particle-block workpiece, simulating one-way and reciprocating sliding processes of abrasive particles on the surface of the workpiece under a given working condition, and extracting sliding resistance borne by the abrasive particles in the sliding process and the number of defect atoms on the surface of the workpiece after sliding is finished; and further calculating a sliding resistance ratio and a defect atom number ratio under one-way and reciprocating loading conditions, and judging whether the material has tribological Bauschinger effect characteristics or not under specific working conditions. According to the method, through atomic scale modeling and simulation, the difference between the sliding resistance and the surface defect of the material under one-way and reciprocating friction is quantitatively identified, and the evaluation of the tribological Bauschinger effect characteristics of the material under the working conditions of different temperatures, pressures, abrasive particle sliding speeds, pressing depths and the like is realized.

The application relates to a discharge measurement method and device based on an optoelectronic integrated electric field sensor, computer equipment, a readable storage medium and a program product, and relates to the technical field of optoelectronic measurement. The method comprises the following steps: in response to a discharge measurement instruction for a target discharge device, performing performance detection on an optoelectronic sensor to obtain a performance detection result of the optoelectronic sensor; the optoelectronic sensor is an optoelectronic sensor based on the Pockels effect; when the performance detection result reaches a performance threshold value, performing discharge measurement on the target discharge device by using the optoelectronic sensor to obtain an optical signal output by the optoelectronic sensor and corresponding to the target discharge device; performing signal conversion on the optical signal to obtain a discharge signal of the target discharge device; performing signal analysis on the discharge signal to obtain a signal analysis result of the target discharge device; and the signal analysis result is used for representing signal change conditions of the discharge signal in the time dimension and the frequency dimension. The method can improve the discharge measurement accuracy.

Embodiments herein describe a photonic platform having a chiplet with a Pockels effect electro-optic layer made of LN or BTO and a substrate. The chiplet is bonded to a photonic wafer which includes a waveguide. In this manner, a ridge waveguide formed by the Pockels effect electro-optic layer and the waveguide utilizes electro-optic effects to tune a signal.

A photonics device is described. The photonics device includes a plurality of unit cells. Each of the unit cells includes a first portion of a waveguide, an electrode section proximate to the first portion of the waveguide, and an integrated circuit (IC) driver coupled to and configured to drive the electrode section. The unit cells are adjacent and distributed along a second portion of the waveguide. The waveguide includes at least one electro-optic material possessing a Pockels Effect. The waveguide is also configured to carry an optical signal. The IC driver, the electrode section, and the first portion of the waveguide for each of the unit cells are integrated into the photonics device. The unit cells are configured such that the photonics device has a 3 dB bandwidth of at least 70 GHz and the first portion of the waveguide has a length not exceeding five hundred micrometers.

Structures including a grating coupler and a layer that exhibits an electric-field-induced Pockels effect and methods of forming such structures. The structure comprises a first grating coupler on a substrate, a second grating coupler having an overlapping relationship with the first grating coupler, and a layer including a portion having an overlapping relationship with the second grating coupler. The layer comprises a material that exhibits an electric-field-induced Pockels effect.

A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockels effect phase shifter (e.g., BaTiO3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.