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Optical VFTO measurement sensor based on Pockels effect

A technology for measuring sensors and sensors, which is applied in the field of sensors, can solve the problems that the measurement point calibration is easily affected by the site environment, the measurement bandwidth of the capacitive sensor method is low, and the measurement accuracy of the casing end screen method is low, achieving superior electrical performance and light weight , to ensure the effect of airtightness

Inactive Publication Date: 2014-11-12
STATE GRID CORP OF CHINA +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the measurement bandwidth of the capacitive sensor method is low; the measurement point calibration of the electric field probe method is easily affected by the site environment; the measurement accuracy of the casing end screen method is low and the measurement points are limited

Method used

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  • Optical VFTO measurement sensor based on Pockels effect
  • Optical VFTO measurement sensor based on Pockels effect
  • Optical VFTO measurement sensor based on Pockels effect

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Embodiment Construction

[0025] In order to better understand the present invention, below in conjunction with accompanying drawing and example the content of the present invention is further described:

[0026] The optical VFTO measuring sensor adopted in the present invention is as figure 1 Shown: including optical sensing head (1), probe support (2), fiber leading flange (3), fiber protection box (4), optical fiber (5), probe (6);

[0027] The axes of the optical fiber lead-out flange (3), the optical fiber protection box (4), the probe support (2) and the probe (6) coincide;

[0028] The optical fiber (5) is connected with the optical sensing head (1), passes through the probe (6) and the probe support (2) and leads out to the optical fiber protection box (4) through the optical fiber lead-out flange (2), and then through the optical fiber protection box ( 4) The flange at the end leads out.

[0029] The schematic diagram of the internal structure of the optical sensor head is shown in figure ...

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Abstract

The invention provides an optical VFTO measurement sensor based on the Pockels effect. The sensor comprises optical sensing heads (1), probes (6), probe supports (2), an optical fiber leading-out flange (3) and optical fiber protection boxes (4), wherein the height-adjustable probe supports (2), the probes (6) fixed by the probe supports (2), the optical sensing heads (1) adhering to the centers of end faces of the probes (6) and the optical fiber protection boxes (4) are arranged at the two ends of the optical fiber leading-out flange (3) respectively, and axes of the probes (6), the probe supports (2), the optical fiber leading-out flange (3) and the optical fiber protection boxes (4) are on the same line. The sensor is small in size, light in weight, low in cost and excellent in electric performance. The upper limiting frequency measured by the sensor reaches GHz, and the sensor can measure direct current signals in the lower limiting frequency. The optical VFTO measurement sensor based on the Pockels effect has obvious advantages compared with the existing optical VFTO measurement sensor manufactured by means of other principles and measuring the upper limiting frequency of MHz and the lower limiting frequency of several Hz.

Description

Technical field: [0001] The invention relates to a sensor, in particular to an optical VFTO measurement sensor based on the Pockels effect. Background technique: [0002] Gas insulated switchgear (GIS), which is widely used in the field of high-voltage transmission, has the advantages of small footprint, less maintenance workload, excellent insulation performance, and high reliability. [0003] During operation, the action speed of the isolating switch, grounding switch and circuit breaker in the GIS is low, and repeated breakdown of the contact gap will occur, resulting in a very fast transient state with a high amplitude, a large steepness, and a frequency up to GHz Overvoltage (very fast transient overvoltage, VFTO) can cause damage to GIS and transformer equipment in severe cases. At the same time, the ground potential rise caused by VFTO will cause damage to the secondary equipment of the substation. [0004] The phenomenon of VFTO is complex and random, and its chara...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00
Inventor 邱进吴士普陈江波谭金权张峰汪本进王玲毛安澜徐思恩费烨陈晓明冯宇李璿周翠娟黄琴
Owner STATE GRID CORP OF CHINA
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