DKDP crystal plasma pole Pockels cell driven by single pulse

A Pockels cell and pulse-driven technology, applied in circuits, electrical components, phonon exciters, etc., can solve the problems of obvious thermal distortion, small discharge current, high switching efficiency, etc., and achieve low light absorption coefficient and discharge current. Small, breakdown stable effect

Inactive Publication Date: 2010-01-06
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

[0007] Article titled "26cm×26cm aperture plasma electrode electro-optic switch" (Henesian MA and GoldharJ, Demonstration of electro-optical switching at the 26cm×26cm aperture using plasma electrodes, Optics Letters, 1984, 9(11): 516~518) And the article titled "A simple method for the operation of the plasma-electrode Pockels cell of a megajoule laser device" (J. Gardelle, E. Pasini, B. Bicrel, A new regime of plasma-electrode Pockels cell operation for the laser megajoules project[ R], Proceeding of IFSA, 2001, 510~513) respectively disclose the plasma electrode Pockels cell of the above two working modes, but the existing two working modes of the plasma electrode Pockels cell are used in high average power applications has its limitations
In the traditional plasma electrode Pockels cell (PEPC) working mode, the high-current gas discharge time is maintained at tens or even hundreds of milliseconds, and the long-term discharge makes the gas ions continuously bombard the discharge cathode, which causes the temperature of the cathode to rise. , and then heat the switch crystal, causing optical thermal distortion and affecting the output of the laser
The single-pulse drive method (OPP) relies on positive and negative pulse high voltages to cause field breakdown of the working gas, thereby forming high-conductivity plasma and charging the Pockels cell, so a high half-wave voltage is used. KDP crystal, the advantage of this working method is that the discharge current is small and will not cause the temperature of the electrode to rise, but the KDP crystal has a large light absorption coefficient (~6%cm -1 ), thermal distortion is obvious, not suitable for application under high average power conditions
The light absorption coefficient of DKDP crystal is an order of magnitude smaller than that of KDP crystal, which can be applied under high average power conditions. However, the half-wave voltage of DKDP crystal is low. Under this voltage, the breakdown of the gas in the discharge chamber is unstable, and it is difficult to form an effective high conductivity plasma, making it difficult to achieve high switching efficiency

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  • DKDP crystal plasma pole Pockels cell driven by single pulse

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Embodiment Construction

[0022] exist Figure 1~2Among them, the DKDP plasma electrode Pockels cell driven by a single pulse of the present invention comprises a Pockels cell housing 1, a DKDP crystal 2, a square hole 11 for inlaying a DKDP crystal in the middle part of the Pockels cell, a discharge chamber (30 , 40), discharge electrode (3,13), light window (4,14), air inlet nozzle (5,15), air extraction nozzle (6,16), first electrode connecting rod 7 and second electrode connecting rod 17. Non-inductive capacitors are also included. The Pockels cell shell 1 is made of a whole piece of glass, and the Pockels cell shell 1 and the discharge chamber (30, 40) are both cylindrical. The DKDP crystal is embedded in the square hole 11 in the middle of the Pockels cell shell 1 through silica gel bonding; the two sides of the DKDP crystal are respectively provided with a discharge chamber 30 and a discharge chamber 40; the discharge chamber 30 is provided with a light window 4 and a discharge chamber 40 A li...

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Abstract

The invention provides a DKDP crystal plasma pole Pockels cell driven by a single pulse. A non-inductive capacitor is arranged in a DKDP crystal plasma pole Pockels cell driven by a single pulse, and the Pockels effect of a DKDP crystal driven by the single high-voltage switch pulse is realized. The DKDP crystal plasma pole Pockels cell driven by the single pulse has small discharging current, large diameter, low light absorption coefficient and stable puncture and can be used for the Q switch and stage isolation of a laser with large diameter and high average power.

Description

technical field [0001] The invention belongs to the field of high average power lasers, in particular to a single-pulse-driven DKDP crystal plasma electrode Pockels cell. Background technique [0002] In high average power lasers, in order to obtain high-power repetition rate laser pulses, a repetition rate Pockels cell is usually used for Q-switching and isolation. Under the high average power light load, the Pockels cell switch crystal will cause temperature rise and temperature gradient due to light absorption, which will change the refractive index and cause thermal depolarization and wavefront distortion of the transmitted beam. Therefore, switching crystals for high average power require a small linear absorption coefficient and a large thermal conductivity. [0003] Electro-optic crystals used for high average power Q-switching in recent years include: LiNbO 3 , BBO, KTP, RTP and DKDP. LiNbO 3 The absorption coefficient is low (~0.1% cm -1 ), but the electro-opti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/115H01S3/10
Inventor 张雄军吴登生郑建刚张君董云田晓琳
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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