479 results about "Quasi-crystals" patented technology

The invention relates to the technical field of force sensors, and discloses a nonlinear decoupling method and system for a three-axis force sensor, and the method comprises the steps: collecting multi-dimensional original data, and carrying out the adaptive noise reduction, dynamic selection of a wavelet basis, and construction of a filtering matrix, and obtaining a noise reduction signal through calculation; constructing a dynamic PINN proxy model, fusing material parameters and environment parameters, outputting a stiffness matrix, establishing an online parameter updating mechanism, calculating the obtained optimization parameters, and constructing an enhanced dynamic compensation matrix; the output stiffness matrix and the enhanced dynamic compensation matrix are fused, and a main singular value is reserved; reconstructing to obtain a reconstructed strain field, establishing a multi-physics field coupling model to compensate quantum-thermal coupling errors, and compensating wire inductive coupling under high frequency; constructing a multi-scale graph structure, strengthening a loss function through physical constraint, performing crystal plasticity hysteresis compensation, fusing multi-scale features, and calculating and outputting a decoupling force value; and an intelligent calibration decision is established, the drift trend is predicted, and the calibration period is dynamically adjusted.

A positron emission tomography (PET) scanner includes a plurality of gamma radiation detector modules arranged to form a detector ring. Each detector module includes an array of scintillator detectors. Each scintillator detector comprises a monolithic scintillation crystal and a plurality of photodetector arrays, such as silicon photomultipliers (SiPMs). A photodetector array is positioned on at least two nonparallel faces of each scintillation crystal. In some examples, a photodetector array is positioned on each of three orthogonal faces of each scintillation crystal.

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention relates to a thin film electro-optical crystal-silicon nitride heterogeneous integrated N * N high-speed optical switch array and a preparation method thereof. The thin film electro-optical crystal-silicon nitride heterogeneous integrated N * N high-speed optical switch array is formed by connecting 1 * 2 or 2 * 2 Mach-Zehnder high-speed optical switch units according to a certain topological structure. Wherein the high-speed optical switch unit is composed of a silicon nitride passive waveguide and a thin-film electro-optical crystal / silicon nitride heterogeneous integrated phase shift region. Comprising but not limited to thin-film lithium niobate, thin-film lithium tantalate, barium titanate and lead zirconate titanate is integrated above the silicon nitride phase shifting arm through a micro transfer printing method to form a heterogeneous integrated phase shifting region. The large-scale high-speed optical switch array with excellent performance is realized by combining the characteristics of ultra-low loss, CMOS compatibility, thermal stability and the like of a silicon nitride material, the characteristics of low power consumption, low loss, high-speed modulation and the like of a thin film electro-optical crystal and the advantages of high flexibility, parallel integration, low cost, low loss and the like of a micro transfer printing method.

The invention discloses a method and device for measuring a crystal electro-optical coefficient at low voltage, and relates to the technical field of photoelectric coefficient measurement, and the method comprises the steps: employing a wavelength tunable laser as an incident light source of a crystal electro-optical coefficient detection system; before an incident light source is input into a to-be-measured laser crystal, a wave plate is added to serve as a phase compensator to generate phase delay phi 1, and meanwhile the to-be-measured laser crystal generates phase delay phi 2 under the action of direct-current voltage; when the crystal electro-optical coefficient detection system is a half-wave voltage detection system; adjusting the wavelength of the tunable laser so that 3pi / 4 is less than or equal to phi1lt; pi; when the crystal electro-optical coefficient detection system is a full-wave voltage detection system, the wavelength of the tunable laser is adjusted to enable 7pi / 4 to be smaller than or equal to phi1lt; 2pi. As the used light source is the wavelength tunable laser, phi 1 can be adjusted in a large range by changing the wavelength, so that phi 2 and the test voltage are changed, the purpose of measuring the electro-optical coefficient of the crystal at low voltage is achieved, and the test safety is improved.

This invention relates to a Bragg light generation system and method suitable for Bragg-type atomic interferometers. The system includes: a laser for generating a first laser beam with a frequency in a preset atomic absorption peak band; an optical circulator for propagating the first laser beam to a cascaded acousto-optic modulator and receiving two third laser beams returned from the cascaded acousto-optic modulator; a cascaded acousto-optic modulator for diffracting the first laser beam into two second laser beams with opposite propagation directions through Bragg diffraction of two acousto-optic crystals; an optical assembly for performing secondary diffraction on the two second laser beams and reflecting the two mutually perpendicular second laser beams to the cascaded acousto-optic modulator; and an output module for splitting and sampling the two third laser beams and modulating the sampled third laser beams into Bragg laser beams in the target frequency band. This invention reduces the path separation of the two Bragg laser beams by using a quasi-common optical path, thereby reducing phase noise and improving measurement accuracy.

The invention discloses a dynamic tunable zero-level electro-optical wave plate system, a device and a preparation method, and belongs to the technical field of optical devices. The invention provides a dynamic tunable zero-order electro-optical wave plate system, and the system comprises a zero-order electro-optical wave plate device which comprises a wave plate substrate made of an electro-optical crystal of a non-centrosymmetric structure, and an electrode disposed on the wave plate substrate; the output end of the adjustable voltage source is electrically connected with the electrode; wherein the adjustable voltage source is configured to be capable of outputting a half-wave working voltage corresponding to a target working wavelength, so that the zero-order electro-optical wave plate device works at the target working wavelength as a half-wave plate. According to the invention, self-adaptive matching of a single device to a plurality of working wavelengths is realized, the problem that the working wavelength of the device is single due to material dispersion is solved, and meanwhile, the processing difficulty of an ultrathin structure required by a specific wave band is avoided.

The invention discloses a non-linear frequency conversion regenerative amplification device and a method thereof, and belongs to the technical field of laser non-linear frequency conversion. The device comprises a signal light injection unit, a regeneration amplification cavity unit and a pump light synchronization unit. The regenerative amplification cavity unit comprises an optical resonant cavity structure module, a polarization control module and a nonlinear action module. A time domain switch is formed through the polarization control module under the driving of the time schedule controller, and the preset number of times of circulation of signal light in the cavity is accurately controlled. And meanwhile, the pump light synchronization unit generates pump pulse string laser which is synchronous with the circulation process and has sub-pulse power increasing in sequence, so that the signal light and one corresponding pump sub-pulse are subjected to optical parametric amplification in the nonlinear crystal in each circulation. The space complexity of multi-stage amplification is converted into time domain controllability, high-efficiency and high-gain nonlinear frequency conversion is realized by using a single-stage compact structure, and the integration level and the stability of the system are remarkably improved.

The invention belongs to the technical field of textile materials, and relates to an environment-adaptive multi-spectrum camouflage cloak and a preparation method thereof. Comprising a cloak body, the cloak body is made of composite fabric, the composite fabric sequentially comprises a wear-resistant layer, a waterproof layer and a close-fitting layer from outside to inside, and the surface of the wear-resistant layer is sequentially coated with a thermochromic dye layer, a far infrared plating layer and a visible light hiding layer from bottom to top; the thermochromic dye layer is formed by compounding disperse dye and bistable thermochromic microcapsules, and the visible light stealth layer is prepared from photonic crystal gel; and the far infrared plating layer is prepared from an indium tin oxide film. The desert camouflage is switched below 5 DEG C, the woodland camouflage is switched above 60 DEG C, and different regional environments are matched; according to efficient multi-spectrum camouflage, the color difference between the visible light band and the background is smaller than or equal to 1.95, three emissivity levels are formed in the infrared band, and the thermal imaging detection probability is reduced.

Tapered scintillator modules and detection devices having tapered scintillator modules in at least the end that contacts an optical sensor where the taper depends on the location of the scintillator module within the active area of the optical sensor is provided. Tapering of the scintillator modules may be close to the interface between the optical sensor and the module to minimize light leak to neighboring pixels at the interface while still allowing the detection device to retain high geometric efficiency and sensitivity to incident gamma rays since the distal end may not be tapered, which has a highest probability for gamma ray interaction based on Beer-Lambert law for photoelectric absorption.

The invention provides a photoelectric limitation enhanced high-efficiency photonic crystal surface emitting laser, which belongs to the technical field of semiconductor lasers, and comprises a substrate, and an N-type buffer layer, an N-type cladding, an N-type limiting layer, an active region, a P-type limiting layer, a photonic crystal layer and a current blocking layer which are epitaxially grown from bottom to top, the P-type cladding, the P-type distributed Bragg reflection layer and the P-type cover layer are grown in a secondary epitaxial mode, and the electric insulation layer, the positive electrode, the anti-reflection dielectric layer and the negative electrode are arranged. The laser is divided into a gain region and a non-gain region; in the gain region, the current blocking layer is completely etched away, and a photonic crystal hole is formed in the photonic crystal layer; and in the non-gain region, the current blocking layer is reserved and etched to form a grating. According to the invention, the current blocking layer is introduced, a reverse biased PN junction is formed in the non-gain region, and lateral diffusion of carriers is inhibited; the grating in the non-gain area strongly limits a light field horizontally propagated by the photonic crystal resonant cavity in the gain area, and light loss is reduced. According to the invention, the efficiency of the laser is improved.

The invention relates to the technical field of battery materials, in particular to a Br-doped Y / Zr-based sulfide solid electrolyte and a preparation method and application thereof.The chemical formula of the Br-doped Y / Zr-based sulfide solid electrolyte is shown as the formula (I): Lia (YxZr1-x) bClcBrySd, wherein 0.5 < = (a + b) / (c + d) < = 1; gt; 0, bgt; 0, cgt; 0, dgt; 0; 0 lt; xlt; 1; 0 lt; and y < = c. According to the invention, by introducing Br <->, the lattice volume is expanded, the interstitial space in the crystal is improved, and the transmission path of Li < + > is expanded, so that the Li < + > migration energy barrier is reduced, and the conductivity of the solid electrolyte can be improved to a certain extent; a synergistic effect can be achieved through Y / Zr, so that an originally compact lattice framework is slightly expanded, and a smoother conduction path is constructed for ions Li < + >; on the other hand, crystal transformation of Zr can be inhibited through Y, the interface stability is improved, and finally the solid electrolyte has high conductivity and high interface stability.

The invention discloses a surface acoustic wave hydrogen sensor based on a platinum and graphene composite film and a manufacturing method thereof, and belongs to the technical field of gas sensors, the surface acoustic wave hydrogen sensor comprises a piezo-electric crystal, the piezo-electric crystal is oppositely provided with a first interdigital transducer and a second interdigital transducer, a graphene film is deposited on the piezoelectric crystal and located on a sound propagation path between the first interdigital transducer and the second interdigital transducer, a platinum catalyst layer film is deposited on the surface of the graphene film, and the first interdigital transducer and the second interdigital transducer are connected with an external circuit through metal pins. The external circuit comprises a signal generator, a frequency meter and a data acquisition system, the signal generator generates an excitation signal and transmits the excitation signal to the first interdigital transducer through the metal pin, and a detection signal generated by the interdigital transducers is received by the data acquisition system and then is detected and compared through the frequency meter. The problems that an existing pure graphene hydrogen sensor is low in sensitivity, poor in selectivity and slow in response time can be solved.

The application provides a vibrating diaphragm and a loudspeaker. The loudspeaker comprises a vibrating diaphragm. The vibrating diaphragm comprises a crystal and a film body. The crystal can form a magnetic field after being electrified. The film body is formed by solidification of a liquid injection material. One side surface of the film body has a protruding part. The protruding part is provided with a receiving groove. The crystal is located in the receiving groove. The top of the protruding part has a shielding part. The shielding part is partially located above the receiving groove and is used for limiting the crystal and exposing part of the crystal. The crystal and the film body are connected in an integrated injection molding manner. The crystal can form a variable magnetic field through current change and interact with an environmental magnetic field to drive the film body to vibrate and emit sound. The vibrating diaphragm and the loudspeaker can realize the purposes of simplifying the process, ensuring the connection between the crystal and the film body, improving the production efficiency and reducing the processing cost by connecting the crystal and the film body in an integrated injection molding manner. The structural stability is further improved through the structural design of the protruding part and the shielding part in the film body, so that the purpose of ensuring the sound quality is realized.

A device and method for detecting the deuterium doping concentration of a deuterium-doped KDP crystal are disclosed. The device comprises a fundamental frequency laser, a second-harmonic deuterium-doped KDP crystal arranged sequentially along the laser output direction of the fundamental frequency laser, a frequency doubling adjuster acting on the second-harmonic deuterium-doped KDP crystal, a first second-harmonic laser color separator, a second second-harmonic laser color separator, and an energy meter. The angle at which two fundamental frequency beams of different wavelengths output from the fundamental frequency laser are incident on the second-harmonic deuterium-doped KDP crystal is controlled by the frequency doubling adjuster. Based on the reading of the energy meter, the second-harmonic deuterium-doped KDP crystal is adjusted to a position corresponding to the phase matching angle. The deuterium doping concentration of the second-harmonic deuterium-doped KDP crystal is obtained by comparing the difference in the measured phase matching angles of the two laser beams with the difference in the phase matching angle calculated according to an empirical formula and the relationship between the phase matching angle difference and the deuterium doping concentration of the crystal. This invention has the advantages of stable device and simple and accurate detection method.

The utility model belongs to the technical field of crystal resonator coating tools, and discloses a crystal resonator coating tool which comprises a tool body, and the adsorption ends of adsorption mechanisms extend to the interior of a placement groove. When the crystal resonator needs to be subjected to film coating operation, external adsorption equipment is communicated with the mounting box through the first connecting pipe, gas enters the mounting box through the first connecting pipe, and gas enters the shunting ring through the plurality of groups of second connecting pipes; gas can be uniformly distributed into the adsorption pipes, and the adsorption pipes extend into the placement groove, so that the crystal resonator placed in the placement groove can be adsorbed, the crystal resonator can be stably fixed in the placement groove of the tool body, subsequent coating operation is facilitated, and the production efficiency is improved. And the plurality of adsorption pipes can ensure that the crystal resonators in each placement groove can be stably adsorbed, so that the crystal resonators are prevented from displacing in the coating process, and the coating precision and quality are improved.

This invention proposes a multi-target detection method based on entangled photons. First, a pump light is generated using a continuous narrow-linewidth semiconductor laser, which, after polarization modulation and focusing, illuminates a PPKTP crystal. A spontaneous parametric down-conversion process generates polarization-entangled photon pairs, which are then separated into signal and reference light. These are received by a single-photon detector to obtain two time series. Second, coincidence measurements are performed on the time series in different scanning directions within the observation area to obtain a coincidence count matrix. Then, a two-dimensional constant false alarm rate (CFAR) detection algorithm is introduced, using ordered statistics to estimate background noise and adaptively adjust the detection threshold to screen candidate target points. Third, a density clustering algorithm based on correlation strength weighting is employed, combining the correlation strength and spatial distribution of entangled photon pairs to detect different targets and suppress isolated noise. Finally, the coincidence count peak points within each target cluster are selected as the final detection targets, thereby achieving multi-target detection with unknown numbers and randomly distributed locations.

The present application relates to the technical field of force sensor, disclose a kind of nonlinear decoupling method and system of triaxial force sensor, comprising: acquisition multi-dimensional original data, and carry out adaptive noise reduction, dynamically select wavelet base, construct filter matrix and obtain denoising signal;Dynamic PINN proxy model is constructed, material parameters and environmental variables are fused, and stiffness matrix is output, online parameter updating mechanism is established, and the optimized parameter calculated is constructed enhanced dynamic compensation matrix;The output stiffness matrix and enhanced dynamic compensation matrix are fused and the main singular value is reserved;Reconstruction obtains reconstructed strain field, establishes multi-physical field coupling model compensation quantum-thermal coupling error, and compensates the lead inductance coupling under high frequency;Multi-scale graph structure is constructed, loss function is reinforced by physical constraint, crystal plasticity hysteresis compensation is carried out, multi-scale features are fused, and the decoupling force value is calculated;Establish intelligent calibration decision, predict drift trend and dynamically adjust calibration cycle.

The application relates to the field of laser technology, in particular to a device and a method for generating wide-tuning narrow-line-width mid-infrared laser, wherein the pump light emitted by a nanosecond pulse OPO base frequency pump source is reflected to a beam splitter by a full reflection mirror after passing through a first adjuster; the pump light emitted by a continuous wave OPO base frequency pump source is irradiated to the beam splitter after passing through a second adjuster; the two beams of pump light are combined after passing through the beam splitter, are focused after passing through a plano-convex lens, are irradiated to a first plano-concave full reflection mirror, and then are transmitted to a nonlinear crystal to generate signal light and idler mid-infrared laser through nonlinear frequency conversion; the idler mid-infrared laser and the residual pump light are transmitted to a doublet mirror and are separated by the doublet mirror; the signal light is reflected to the nonlinear crystal in sequence through a second plano-concave full reflection mirror, a first plane full reflection mirror, a second plane full reflection mirror and the first plano-concave full reflection mirror, and an oscillation closed loop is formed. The application realizes that the pulse OPO outputs a pulse with a line width less than 90 MHz in the tuning range, and the extraction efficiency of the idler light is as high as 9.3%.

The invention discloses a crystal growth device, and relates to the technical field of crystal growth, the crystal growth device comprises a gas conveying structure, a furnace body, a thermal insulation layer and a crystal growth mechanism, the gas conveying structure comprises a gas inlet structure and a gas extraction structure, the thermal insulation layer is arranged in the furnace body, the thermal insulation layer defines a mounting space, and the gas inlet structure and the gas extraction structure are arranged in the mounting space. The crystal growth mechanism is arranged in the mounting space, a reaction cavity is defined by the crystal growth mechanism, an air inlet and an air outlet are formed in the furnace body, the air inlet structure is communicated with the air inlet and used for conveying air into the furnace body, the air exhaust structure is communicated with the air outlet, and the air exhaust structure is used for exhausting air into the furnace body. The air exhaust structure further communicates with the air inlet structure and is used for driving air flowing out of the air outlet to flow into the air inlet structure. According to the crystal growth device, cyclic utilization of the process gas can be achieved, the utilization rate of the process gas is increased, and the quality of silicon carbide crystals can be improved.

This invention provides a device and method for generating simultaneously emitted three wavelengths of laser light with equal spacing, relating to the field of laser technology. The device includes a pump source, a half-wave plate, an optical isolator, a focusing lens, an input mirror, a Raman crystal, an output mirror, a nonlinear crystal, and a dichroic mirror arranged sequentially along the optical path. The pump light, after its polarization direction is adjusted by the half-wave plate and the optical isolator, is focused onto the Raman crystal. Stimulated Raman scattering generates first and second Stokes beams, which are then converted to sum-frequency light by the sum-frequency effect of the nonlinear crystal. Finally, the dichroic mirror outputs three equally spaced wavelengths of laser light. This invention separates the Raman conversion and sum-frequency processes through an external cavity structure, achieving for the first time the simultaneous emission of three equally spaced wavelengths of laser light, offering advantages such as high output energy, equal wavelength spacing, and simultaneous emission of three wavelengths.

The invention provides a zero-dimensional manganese-based quaternary phosphonium cation organic-inorganic hybrid metal halide as well as a preparation method and application thereof, and belongs to the technical field of material science and photoelectricity. The preparation method comprises the following steps: grinding and uniformly mixing quaternary phosphonium ionic liquid, hydrated halogenated manganese salt and oxalic acid dihydrate to obtain a mixed material; and transferring the mixed material into a high-temperature reaction kettle, carrying out high-temperature reaction, cooling to room temperature, adding ethanol into the high-temperature reaction kettle, heating, recrystallizing, and cooling to obtain the zero-dimensional manganese-based quaternary phosphonium cation organic-inorganic hybrid metal halide. According to the method, the defect that a traditional solvent volatilization method, a solvothermal method, a solvent diffusion method and the like highly depend on strong haloid acid and an organic solvent is overcome, and the technical problem of green controllable synthesis of the 0D Mn-OIMHs crystal is solved by adopting a green and environment-friendly ionothermal synthesis method.

The disclosure provides an electro-optic phase modulator for a displacement measurement system and the displacement measurement system. The electro-optic phase modulator comprises a housing with an accommodation space, an entrance and an exit are formed on the housing, and polarized measurement light enters the accommodation space through the entrance; a modulation crystal is arranged in the accommodation space and is configured to modulate the polarized measurement light from the entrance, and a polarization direction of the polarized measurement light is 45° to a modulation electric field direction of the modulation crystal; and a quarter-wave plate is located between the modulation crystal and the exit, an optical axis of the quarter-wave plate is 45° to the modulation electric field direction of the modulation crystal, the polarized measurement light passes through the quarter-wave plate and is emitted to a measured object through the exit, the measured object reflects the polarized measurement light back to the modulation crystal through the quarter-wave plate, and a polarization component direction of the polarized measurement light reflected back to the modulation crystal is changed by 90° compared with that of the polarized measurement light emitted to the modulation crystal through the entrance.

The utility model discloses a crystal heat treatment device for stainless steel forging, relates to the technical field of heat treatment devices, and provides the following scheme aiming at the problems that crystal columns with different lengths are difficult to fix in the prior art, so that the crystal columns with different lengths are inconvenient to heat: the crystal heat treatment device comprises a heating bin, and a placing frame is inserted into the heating bin; fastening mechanisms distributed at equal intervals are arranged in the placement frame, and each fastening mechanism comprises symmetrically distributed fixing blocks, a supporting block fixed to the outer wall of one side of the corresponding fixing block, connecting rods symmetrically fixed to the two ends of the outer wall of the other side of the corresponding fixing block, and a supporting rod fixed to the bottom of the outer wall of the other side of the corresponding fixing block. The crystal column is placed between the two connecting rods, the bottom of the crystal column is supported by the supporting rod, and the crystal column is clamped and fixed between the clamping plate and the fixing block in cooperation with elastic pushing of the telescopic spring, so that the crystal columns with different lengths are sequentially clamped and fixed in different fastening mechanisms.

A method of performing a quantum operation performed on a quantum device comprising at least one pair of quantum qubit crystals, the method comprising: setting a detuning value of each qubit crystal to a first value, wherein the detuning value is a difference between a frequency of a gate field of the at least one pair of qubit crystals and a frequency of a motional mode of the at least one pair of qubit crystals; ramping down the detuning value according to a ramping function such that the detuning value is decreased from the first value to a second value; ramping up the detuning value according to the ramping function such that the detuning value is increased from the second value to a third value; wherein the detuning value is changed by changing the frequency of the gate field and / or the frequency of the motional mode.

The present invention relates to a nonlinear optical converter (11) for a laser radiation source which comprises a pump laser for generating a pump laser beam, the nonlinear optical converter comprising: a first optical parametric oscillator (OPO) crystal (2) which faces the pump laser and which is designed to generate, from the pump laser beam (6), a first pair of gain bands, in particular a signal band and an idler band, as well as residual pump radiation, and which has a first phase-matching angle (7); and a second optical parametric oscillator (OPO) crystal (3) which is arranged downstream of the first optical parametric oscillator (OPO) crystal (2) and is designed to generate, from the residual pump radiation, a second pair of further gain bands, in particular a signal band and an idler band.

The invention discloses a light emitting diode and a preparation method thereof. The light emitting diode comprises a substrate; the N-type GaN layer is located on the substrate; the first epitaxial structure is located on the N-type GaN layer, the first epitaxial structure comprises an active layer, and the side wall of the first epitaxial structure is the M surface of the GaN crystal; the second epitaxial structure is located on the first epitaxial structure, the second epitaxial structure comprises an electron blocking layer and a P-type GaN layer which are stacked in sequence, and the side wall of the second epitaxial structure is the A face of the GaN crystal; the first electrode is electrically connected with the P-type GaN layer, and the second electrode is electrically connected with the N-type GaN layer; wherein the projection of the second epitaxial structure on the N-type GaN layer is located in the projection of the first epitaxial structure on the N-type GaN layer. According to the light-emitting diode, the light extraction efficiency is improved, meanwhile, non-defect recombination of the side wall of the active area is reduced, the internal quantum efficiency is improved, and the light-emitting efficiency of the light-emitting diode is improved.

The invention discloses a preparation process of a nanometer photorefractive crystal electronic material, and the preparation process specifically comprises the following steps: S1, synthesis of a refractive crystal precursor material, S2, synthesis of a refractive crystal material, S3, modification of the refractive crystal material, and S4, dispersion of the refractive crystal material.The invention relates to the technical field of preparation of nanometer photorefractive crystal materials. According to the preparation process of the nano photorefractive crystal electronic material, nano ZrO2 is synthesized by adopting an oil system route, so that zirconium oxide with the range of 5-15 nanometers is synthesized, the defects that a tetragonal phase configuration cannot be obtained and the particle size is small in an existing water system route are overcome, and pilot scale production can be carried out by adopting the process disclosed by the invention. Compared with an existing competitive product, the high-refractive-index composite resin prepared through the method is more excellent in optical performance, such as transmittance, and the high-refractive-index composite resin is better than the competitive product.

The invention discloses a two-dimensional acoustic crystal based on a microstructure. A functional material layer of the two-dimensional acoustic crystal comprises square acoustic cells which are periodically arranged in an xy plane according to a square lattice; a scatterer in the acoustic cell has rotational symmetry and is composed of a cross structure and four identical semicircles, the cross structure is composed of two identical rectangular strips in an orthogonal mode, the diameter of the semicircle is collinear with the short edge of the rectangular strip at the tail end where the semicircle is located, and the diameter of the semicircle is larger than the length of the short edge of the rectangular strip. The rotation angle of the scatterer is matched with the geometric parameter of the scatterer, so that the physical energy band structure of the two-dimensional acoustic crystal generates a triple degeneracy point formed by the first three physical energy bands at the M point of the Brillouin region, and further a stable boundary state with global characteristics is realized. Furthermore, an acoustic frequency beam splitter is constructed on the basis of the boundary state, and sound waves of different frequency bands are split to form included angles of 180 degrees and 90 degrees.

The utility model relates to a wavelength switching output device for a laser. The wavelength switching output device comprises a mounting seat, a driving part, a first transmission part, a second transmission part, a first nonlinear crystal assembly and a second nonlinear crystal assembly, the first nonlinear crystal assembly and the second nonlinear crystal assembly are movably mounted on the mounting seat respectively, and the first nonlinear crystal assembly and the second nonlinear crystal assembly coincide or do not coincide in the light propagation direction in the moving process; the first nonlinear crystal component and / or the second nonlinear crystal component can pass through the first nonlinear crystal component and / or the second nonlinear crystal component; and the driving piece is used for driving the first nonlinear crystal assembly to move through the first transmission piece, and is used for driving the second nonlinear crystal assembly to move through the second transmission piece. According to the utility model, lasers with different wavelengths can be output; and in addition, the switching convenience and accuracy are improved and the switching efficiency is improved in a mode that the driving part is used for driving switching.