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914 results about "Quasi-crystals" patented technology

Quasi-crystals are supramolecular aggregates exhibiting both crystalline (solid) properties as well as amorphous, liquid-like properties. Self-organized structures termed "quasi-crystals" were originally described in 1978 by the Israeli scientist Valeri A. Krongauz of the Weizmann Institute of Science, in the Nature paper, Quasi-crystals from irradiated photochromic dyes in an applied electric field.

Optical Coupler Devices, Methods of Their Production and Use

The present invention relates in general to coupling of light from one or more input waveguides to an output waveguide or output section of a waveguide having other physical dimensions and/or optical properties than the input waveguide or waveguides. The invention relates to an optical component in the form of a photonic crystal fibre for coupling light from one component/system with a given numerical aperture to another component/system with another numerical aperture. The invention further relates to methods of producing the optical component, and articles comprising the optical component, and to the use of the optical component. The invention further relates to an optical component comprising a bundle of input fibres that are tapered and fused together to form an input coupler e.g. for coupling light from several light sources into a single waveguide. The invention still further relates to the control of the spatial extension of a guided mode (e.g. a mode-field diameter) of an optical beam in an optical fibre. The invention relates to a tapered longitudinally extending optical waveguide having a relatively larger cross section that over a certain longitudinal distance is tapered down to a relatively smaller cross section wherein the spatial extent of the guided mode is substantially constant or expanding from the relatively larger to the relatively smaller waveguide cross section. The invention may e.g. be useful in applications such as fibre lasers or amplifiers, where light must be coupled efficiently from pump sources to a double clad fibre.
Owner:CRYSTAL FIBRE AS

Terahertz pulse measurement-based burning temperature sensing device and method

ActiveCN103076107AAchieving Wavelength Division Electro-Optic SamplingEasy accessThermometers using physical/chemical changesBeam splitterGrating
The invention discloses a terahertz pulse measurement-based burning temperature sensing device and a terahertz pulse measurement-based burning temperature sensing method. Laser is emitted from a femtosecond laser device, and is divided into reference laser and detection laser through a beam splitter, the detection laser is focused on a photoconduction antenna type terahertz emitter, terahertz pulses emitted by the terahertz emitter are focused on a ZnTe crystal through an off-axis paraboloid lens group; and the reference layer is collimated and is coincident with terahertz waves focused on the ZnTe crystal after passing through a semi-transmission and self-reflection mirror, parallel grating groups and a polarizing film, the terahertz waves are modulated by using Pockels effect of the ZnTe crystal, and image signals corresponding to collected first reference layer carrying terahertz pulse strength information and second reference laser not carrying the terahertz pulse strength information are input into a computer by a CCD (Charge Coupling Device) detector for subsequence processing. According to the invention, the precision and speed of the non-contact combustion measurement method are increased, and the non-contact measurement of combustion object temperature and temperature distribution is realized.
Owner:HANGZHOU DIANZI UNIV

Tapered photonic crystal quantum cascade laser and manufacture method thereof

The invention discloses a tapered photonic crystal quantum cascade laser for outputting near-diffraction-limited beams and the manufacture method thereof. The laser comprises a substrate, as well as a lower waveguide layer, an active area, an upper waveguide layer, an upper cover layer, an upper contact layer, an ohmic contact layer, an electrical insulation layer, a front side electrode and a rear side electrode on the substrate. The laser has the ridge-shaped mesa double-grooved waveguide structure, wherein the ridge-shaped mesa structure includes a main control oscillation area with a uniform ridge width and a gain amplification area with a tapered structure. The photonic crystal structure is used for providing a distributed feedback waveguide manufactured between the upper contact layer and the ohmic contact layer. The tapered photonic crystal quantum cascade laser can acquire singe-mode near-diffraction-limited beam output. The waveguide structure with the combination of the ridge-shaped mesa and the tapered gain amplification area can greatly reduce the far-field divergence angle, thereby improving the output power while obviating the heat dissipation problem that is difficult to avoid for the similar wide-ridge large-power devices.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Adjustable photonic crystal optical fiber terahertz waveguide

InactiveCN102162876ANo need to change geometryChange transfer characteristicsCladded optical fibreOptical waveguide light guideLiquid crystallineFiber
The invention relates to an adjustable photonic crystal optical fiber terahertz waveguide, which comprises a coating consisting of a plastic material and air holes formed in a triangular period. The air hole in the center of the coating is used as a fiber core. The radius of the fiber core is greater than the radii of the other air holes in the coating. Nematic liquid crystals sensitive to the temperature are filled in the fiber core. The refractive index of the liquid crystals is greater than the refractive index of the coating. The refractive index of the liquid crystals can be changed by controlling the temperature of the working environment of the liquid crystals, so that a propagation mode, an effective mode field area and a zero dispersion range of an optical fiber are flexibly controlled. The defect that when the conventional photonic crystal optical fiber waveguide is produced, the optical properties and the transmission characteristics of the conventional photonic crystal optical fiber waveguide cannot be changed is overcome. A structure parameter of a photonic crystal optical fiber for the terahertz waveguide is at the millimeter order of magnitude. Compared with a visible light or infrared band photonic crystal optical fiber, the photonic crystal optical fiber for the terahertz waveguide is easier to prepare.
Owner:TIANJIN UNIVERSITY OF TECHNOLOGY

Device and method for testing nonlinear polarization coefficient and absorption coefficient at terahertz band

The invention relates to a device and a method for testing a nonlinear polarization coefficient and an absorption coefficient at a terahertz band. Laser is split into one path of pump light and one path of probe light by a beam splitter, wherein the probe light is reflected by a reflector group with an adjustable light path, is attenuated by a metal attenuation piece used for adjusting the beam intensity of incident laser and then is reflected to a high resistance silicon chip by the reflector; the pump light split by the beam splitter is reflected to enter a terahertz generation device so as to generate terahertz collimating light and the generated terahertz collimating light is focused on a sample rack at a focus position by a parabolic mirror by virtue of a terahertz polarizing plate, and the terahertz is converted into parallel light which is reflected to the high resistance silicon chip by another parabolic mirror; and the two paths of light are coincided at the high resistance silicon chip, are focused to a detection crystal by the parabolic mirrors, are focused to reach a Wollaston prism by virtue of a 1/4 wave plate after being scattered by using a convex lens and are respectively focused to two photoelectric detectors. A test sample only needs to be arranged at the position of the sample rack or the detection crystal in a light path, namely the nonlinear polarization coefficient and the absorption coefficient of the sample at the terahertz band can be tested.
Owner:UNIV OF SHANGHAI FOR SCI & TECH

Branch controllable titanium dioxide nanotube array thin film and preparation method thereof

The invention discloses a branch controllable titanium dioxide nanotube array thin film and a preparation method thereof. The thin film consists of an array of a titanium dioxide nanotube formed by connecting a main tube and a branch tube in series; the thickness of the thin film is 1-100mum, and the porosity factor is 40-60 percent. The preparation method comprises the following steps: preparinga main tube electrolyte according to the proportion that the mole ratio of ammonium fluoride to glycol to water is 0.05-0.15:17.7:0.015-0.025, and preparing a branch tube electrolyte according to theproportion that the mole ratio of hydrofluoric acid to glycol is 0.15-0.25:17.7; then firstly, putting one surface of a titanium sheet in the main tube electrolyte to serve as the anode; carrying outanode oxidization under the conditions that the DC voltage is 55-65V and the temperature is 0-35 DEG C for 0.5-6h; then using the glycol to clean the anode; subsequently, putting the surface which isanodized in the branch tube electrolyte to serve as the anode, and carrying out anode oxidization under the conditions that the DC voltage is 30-120V and the temperature is 0-35 DEG C for more than 30min, thereby preparing the thin film. The thin film can be widely used for fields of dye-sensitized solar cells, gas sensors, photolytic water hydrogen production and photonic crystal.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

Dual-chirp optical parameter amplification method and device for broadband laser pumping

ActiveCN106329302AOutput continuously tunableLaser detailsFrequency spectrumBeam splitter
The invention discloses a dual-chirp optical parameter amplification method and device for broadband laser pumping. An initial laser source generates narrow-band laser which is divided into two beams, wherein the beam with the high energy is adopted as narrow-band pumping light, and broadband chirp pumping light is obtained after a spectrum widening device, and the light is emitted into a nonlinear crystal through a dichroic mirror; the beam with the low energy enters a super-continuum white light generator and a chirp mirror pair to obtain broadband chirp seed light, is emitted into the non-linear crystal through the dichroic mirror, and is coupled with the broadband chirp pumping light to be subjected to optical parameter amplification; finally, periodic magnitude pulse width femtosecond idler frequency light is obtained through a beam splitter and a pulse compressor. The spectrum widening broadband chirp pumping light is adopted, and the more frequency components are obtained; the broadband chirp pumping light and broadband chirp seed light dual-chirp scheme is adopted, and the instantaneous frequency correspondences are opposite, so that the spectral brand width of output idler frequency light is increased, and the femtosecond idler frequency light output of the periodic magnitude pulse width is achieved.
Owner:WUHAN INSTITUTE OF TECHNOLOGY

Holographic representation device, holographic representation method, holographic realization equipment and holographic realization method

The invention relates to the technical field of displaying, in particular to a holographic representation device, a holographic representation method, holographic realization equipment and a holographic realization method. The holographic representation device comprises photorefraction crystals and a light source, wherein the photorefraction crystals respectively record holographic images at multiple different angles, the light source provides lots of representation light incident on the photorefraction crystals from the different angles, and the representation light is the same as reference light in frequency and optical distance when the holographic images are formed. According to the holographic representation device, the representation lights incident on the photorefraction crystals from the different angles are utilized to be irradiated to the photorefraction crystals. Because the holographic images are recorded by the photorefraction crystals at the different angles, each holographic image can be showed at different angles in a non-interfering mode, observers located on multiple positions can observe the holographic images recorded in the photorefraction crystals, and the problem that an observation angle is single in the holographic representation process is solved.
Owner:BOE TECH GRP CO LTD +1

Infrared-excited fluorescence-lifetime-adjustable up-conversion nanocrystal material and preparing method thereof

The invention belongs to the technical field of nanometer biological materials and particularly relates to an infrared-excited fluorescence-lifetime-adjustable up-conversion nanocrystal material and a preparing method thereof. The fluorescence nanometer material is a core-shell structure nanocrystal material with one core and two shell layers, and is composed of the up-conversion fluorescent center core, the energy transmission layer and the energy absorption layer. The up-conversion fluorescent center core absorbs exciting light with the specific wavelength and emits visible light; the energy transmission layer transmits energy between the energy absorption layer and a visible light emitting layer, and the fluorescence lifetime of the material is regulated by changing the thickness of the energy transmission layer; the energy absorption layer absorbs the energy of infrared-excited light and transfers the energy to the energy transmission layer. Through the design of the three-layer structure, the energy transmission process from Nd<3+ >to Yb<3+> to Tm<3+> and the energy transmission process from Nd<3+> to Yb<3+> to Er<3+> are achieved, and in addition the fluorescence lifetime of the material can be regulated and controlled just by changing the thickness of the middle layer. The material can be applied to the fields of analysis and detection.
Owner:FUDAN UNIV

Topological bulk laser based on energy band inversion light field limiting effect and method

The invention discloses a topological bulk laser based on an energy band inversion light field limiting effect and a method, being characterized in that a topological state photonic crystal which generates a dipole mode and a quadrupole mode near the center of a Brillouin zone and generates energy band reversing and a topological moderate state photonic crystal which does not generate energy bandreversing are adopted; the spliced boundary can generate reflection and limitation effects of a light field, and the boundary encircles to form a closed curve, so that a laser resonant cavity is formed in the boundary. According to the topological bulk laser based on an energy band inversion light field limiting effect and the method, single-mode vertical laser emission with high directivity, lowthreshold, narrow linewidth and high side-mode rejection ratio can be realized; the process difficulty and the preparation cost are reduced; the problems of heat dissipation and electric injection areimproved; the stability of components is improved, and the service life is prolonged; after copying to an electric injection active material system, the topological bulk laser based on an energy bandinversion light field limiting effect can obtain the vertical emitting laser with controllable size, high directivity, low threshold, narrow linewidth and high side mode rejection ratio; and the topological bulk laser based on an energy band inversion light field limiting effect can be applied to the fields of optical communication, solid-state lighting, laser radar, substance detection, medicaldiagnosis and the like.
Owner:PEKING UNIV

Field effect gas sensor taking air gap as insulation layer and preparation method thereof

The invention discloses a field effect transistor gas sensor taking an air gap as an insulation layer and a preparation method. The preparation method mainly comprises the following steps of: spin-coating an organic insulation layer on an electric conducting substrate to serve as a device supporting layer, and etching a part of the device supporting layer to prepare an air gap groove; placing a micro-nano crystal above the air gap; and preparing source and drain electrodes of the device by utilizing a gold plate pasting electrode method or a photoetching technology, wherein the air gap between the micro-nano crystal and a grid electrode at the bottom of the groove is taken as a grid electrode insulation layer of the device. According to the field effect transistor gas sensor taking the air gap as the insulation layer and the preparation method, disclosed by the invention, the pollution and the damage to the surface of the nano-crystal due to the contact of the insulation layer in a preparation process is avoided; the point discharge effect is avoided favorably, and the stability of the sensor is increased; the success rate for preparing the device is greatly increased, and the device performance is improved; and an electric conducting channel is directly exposed in gas to be tested, and thus the field effect transistor gas sensor has a better air-sensitive performance. The field effect transistor gas sensor disclosed by the invention has the advantages of good stability, high sensitivity, detection limit reaching ppb (parts per billion) order and high response speed and recovery speed.
Owner:NORTHEAST NORMAL UNIVERSITY
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