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Light emitting diode of white light and manufacturing method

A technology of light-emitting diodes and light-emitting layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increased production costs, complex production processes, time-consuming and laborious, etc., and achieve the effect of low cost and simple production process

Inactive Publication Date: 2013-06-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these two methods are not only complicated in production process, but also time-consuming and labor-intensive, which greatly increases the production cost of LED.

Method used

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  • Light emitting diode of white light and manufacturing method
  • Light emitting diode of white light and manufacturing method

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Embodiment Construction

[0009] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0010] The invention discloses a light-emitting diode with photonic crystals, which comprises: a substrate, an n-type contact layer, an active light-emitting layer, and a p-type contact layer, and the active light-emitting layer is located between the n-type contact layer and the p-type contact layer; The porous photonic crystal is made on the surface layer of the light-emitting diode, the hole-shaped interior is filled with nano-scale fluorescent powder, and the surface is covered with transparent electrodes.

[0011] The light-emitting diode can be a front-mounted, flip-chip or vertical structure. In the front-mounted structure, the porous photonic crystal is made in the p-type contact layer; in the flip-chip structure, ...

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Abstract

The invention provides a light emitting diode of white light with photonic crystal. The light-emitting dioxide comprises a substrate, an n-type contact layer, an active luminescent layer, a p-type contact layer. The active luminescent layer is located in the middle of the n-type contact layer and the p-type contact layer. The multiple-hole shape photonic crystal is arranged on the surface layer of the light-emitting dioxide, fluorescent powder with a nanometer quantity is filled inside the hole, and a transparent electrode is covered on the surface. The light-emitting dioxide is arranged inside the hole of the surface layer photonic crystal. The filling particle size is yellow, red or green fluorescent powder with a nanometer quantity; the surface of the photonic crystal is covered by the indium tin oxide (ITO) transparent electrode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a white light emitting diode with photonic crystals. Background technique [0002] At present, III-V semiconductor optoelectronic materials are known as the third generation semiconductor materials. Gallium nitride-based light-emitting diodes have become the focus of research in the industry because light-emitting diodes (referred to as "LEDs") of various colors (especially blue or violet light that require a high energy gap) can be produced by controlling the composition of materials. [0003] The preparation method of gallium nitride-based white light-emitting diodes currently mainly uses blue light-emitting diodes plus yellow phosphor powder. The blue light-emitting diode excites the yellow phosphor to emit yellow light, which is then mixed with the blue light emitted by the blue light-emitting diode to form a white-like light source. At pre...

Claims

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Application Information

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IPC IPC(8): H01L33/50H01L33/44
Inventor 马平甄爱功刘波亭王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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