Tapered photonic crystal quantum cascade laser and manufacture method thereof
A technology of photonic crystal and quantum cascade, which is applied in the direction of semiconductor lasers, lasers, phonon exciters, etc., can solve the problems of low output power, complex technology, large waveguide loss, etc., achieve low requirements for equipment and improve far field characteristics, the effect of increasing the output power
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[0079] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0080] In the following, the present invention will be further described by taking the InP / InGaAs / InAlAs material system and the tapered photonic crystal quantum cascade laser as examples, but this does not constitute a limitation to the present invention.
[0081] The invention provides a high-power, near-diffraction-limited tapered photonic crystal quantum cascade laser, which includes an n-type doped InP substrate, an InGaAs lower waveguide layer, a 35-level periodic active region, an InGaAs upper waveguide layer, and an InP upper waveguide layer. Cladding layer, InP upper cladding layer, highly doped InP ohmic contact layer, photonic crystal waveguide, double-groove ridge structure and tapered gain amplification region...
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