High-alloy metals reinforced by diamond-like framework and method for making the same

a diamond-like framework and high-alloy metal technology, applied in the field of metal alloys, can solve the problems of low fracture toughness of conventional ceramic materials, inability to adequately control the fine structure of solidifying metals, and rapid cooling technology, and achieves high uniformity, superior structural stability, and increased thermal stability and corrosion resistance.

Inactive Publication Date: 2006-01-12
DORFMAN BENJAMIN R
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0020] This new class of amorphous and nano-crystalline alloys overcomes many barriers of existing technologies, by, in certain instances, simultaneously increasing the thermal stability and corrosion resistance of the high alloy amorphous metals and preserving many mechanical and tribological properties of diamond-like matter. The new amorphous or nano-crystalline high-alloy metals, intermetallics, and transition metal-metalloids possess very high uniformity and superior structural stability. They may be deposited upon various substrates as uniform, multi-layer or functionally graded coatings with a pre-designed multi-layer profile in one continuous deposition process. The deposited layers generally have excellent adhesion to the various subst

Problems solved by technology

Rapid cooling technology, however, does not allow for adequate control of the fine structure of solidifying metals.
Conventional ceramic materials, however, have low fracture toughness, especially at high temperatures, low strength, and poor reliability.
In order to obtain the lower resistivity C54 phase, a second high-temperature temperature annealing step is required that can have detrimental effects on the silicide and other integrated circuit elements, such as peeling and cracking of dielectric elements and a change of electrical characteristics of conducting elements.
On the other hand, if the phase transformation is not completed or is not uniform, very large scale integrated circuits experience accelerated degradation of structure and performance.
In some very large scale integrated circuits these types of failures may reach 5-10 percent.
Although various approaches were suggested to resolve this polymorphism problem, all of them suffer from similar deficiencies.
In addition, the crystalline structure of silicide causes a principle problem in forming a transistor gate with length of less than 0.1 microns.
Such a complex technology is necessary because no one silicide alone can satisfy simultaneously the requirements of adhesion, electrical resistivity, and self-aligned formation of the contacts.
On the other hand, the multi layer

Method used

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  • High-alloy metals reinforced by diamond-like framework and method for making the same
  • High-alloy metals reinforced by diamond-like framework and method for making the same
  • High-alloy metals reinforced by diamond-like framework and method for making the same

Examples

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example 1

[0063] Five micron films that include 52 to 80 atomic % Cr, 36 to 15 atomic % carbon, 7 to 3 atomic % silicon, and 5 to 2 atomic % oxygen, were deposited in accordance with at least one embodiment of the present invention, at a substrate temperature of about 150 degrees Celsius. Polymethylphenyldisiloxane, (CH3)3SiO[CH3C6H5SiO]3Si(CH3)—, was used as for the precursor, introduced at a flow rate of 1.1 to 1.5 cm3 / hr, to achieve a growth rate of 5 microns / hr.

[0064] Table 1 shows the electrical resistivity and structure as a function of chromium content. All films in Table 1 demonstrate thermal stability exceeding 1100° C. in the absence of oxygen, and sustain a 30-minute exposure in air up to a temperature of 950° C. After the aforementioned high temperature exposure, minor changes in the mechanical properties occur, accompanied by an increase in the percentage of nano-crystallinity. The films posses a micro-hardness of 12 to 15 GPa, high wear resistance, high thermal shock resistance...

example 2

[0065] Five micron films that include 50 to 80 atomic % Fe0.72Cr0.18Ni0.10 metal alloy, 37.5 to 15 atomic % carbon, 9.5 to 3.8 atomic % silicon, and 3 to 1.2 atomic % oxygen, were deposited in accordance with the preferred embodiments of the present invention. As in Example 1, substrate temperature was 150° C., and the polymethylphenyldisiloxane precursor was introduced at a flow rate of 1.1 to 1.5 cm3 / hr to achieve a growth rate was 5 microns / hr.

[0066] Table 2 shows the electrical resistivity and structure as a function of metal alloy content. All films in Table 2 demonstrate thermal stability up to at least 900° C. in the absence of oxygen, and sustain a 30 minute exposure in air up to a temperature of 900° C. These films possess a micro hardness in the range of 11 to 13 GPa, high wear resistance, very high thermal shock resistance, low friction, and uniform structure.

[0067] The alloy films in Table 2 have a wide range of applications, particularly as protective coatings, where ...

example 3

[0068] A series of 1 micron thick films of amorphous and nano-crystalline hafnium reinforced by a carbon diamond-like framework and stabilized by silicon and oxygen were deposited on silicon wafers in accordance with at least one embodiment of the present invention and under similar deposition conditions described in example 1. The chemical composition of the films was 40 atomic % hafnium, 45 atomic % carbon, 9 atomic % silicon, and 6 atomic % oxygen. These films have electrical conductivity in the range of 3×10−3 to 5×10−4 Ohm-cm., and demonstrated high thermal shock resistance and high chemical corrosion resistance in aggressive environments at temperatures exceeding 500° C.

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Abstract

A new class of high-alloy metals is invented. The metals possess an amorphous, nano crystalline, or combined amorphous-nano-crystalline structure and are reinforced, stabilized and hardened with a framework formed by predominantly sp3-bonded carbon, also known-as diamond like carbon. Optionally, other alloying nonmetallic elements selected from the group of Si, B, O, N may additionally stabilize the structure. The disclosed high-alloy metals comprise a metallic matrix which may include iron, nickel, chromium, refractory, and various other metals. These materials are very stable, and do not suffer a structural degradation up to relatively high temperatures. The disclosed high-alloy metals have the properties of high hardness, corrosion and wear resistance, and low friction. They have a wide range of applications as protective coatings on a wide variety of materials in various industries. They may be further applied as magnetic and electronic devices, such as field emission cathodes. Some of these alloys possess high emissivity, and their electrical conductivity may be varied in a relatively wide range.

Description

RELATED APPLICATION [0001] This application claims the benefit of U.S. Provisional Patent Application No. 60 / 506,336, entitled “HIGH-ALLOY METALS REINFORCED BY DIAMOND-LIKE FRAMEWORK AND METHOD OF MAKING THE SAME”, filed on Sep. 25, 2003BACKGROUND OF THE INVENTION [0002] The present invention relates to metal alloys. Particularly the invention relates to amorphous metals or metal-metalloids alloyed with non-metallic elements. [0003] Over the past few decades, amorphous alloys have been produced with various characteristics with regard to magnetic, mechanical, and chemical properties, electrical resistivity, and corrosion resistance, and also at a relatively low cost. For instance, various amorphous Fe group alloys, Pd-alloys, Cu alloys, Zr alloys, and Ti-alloys have been produced by rapidly cooling the molten alloy. These amorphous metals possess certain mechanical and chemical characteristics not achievable in crystalline materials. Rapid cooling technology, however, does not allow...

Claims

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Application Information

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IPC IPC(8): C22C26/00
CPCC22C26/00C23C14/06C23C16/30C22C45/006C22C33/003C22C45/04C22C45/10C22C1/002C22C45/02C22C1/11
Inventor DORFMAN, BENJAMIN R.
Owner DORFMAN BENJAMIN R
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