This invention discloses a
piezoelectric MEMS device, its fabrication method, and its applications, belonging to the field of
microelectromechanical systems (MEMS) technology. The fabrication method includes: preparing an SOI
wafer; performing PSG spin-
coating annealing and / or metallization modification on the device layer surface to form a conductive seed layer; depositing a piezoelectric layer; simultaneously
etching the insulating layer, modified device layer, and piezoelectric layer using a specific
mixed gas or pulse modulation process; forming a
metal electrode layer and a bonding
metal layer; and bonding and integrating with a TSV structure. This invention replaces traditional
metal electrodes with metallization modification, avoiding
electrode fatigue and aging, and improving device reliability; the use of single-
mask synchronous
etching and
vapor phase release technology eliminates
overlay and bonding errors, reducing
process complexity and cost, making it suitable for high-performance sensors,
ultrasonic detection, audio, and smart hardware.