The invention relates to an environment-friendly process method for improving the surface
metal cleaning efficiency of a
silicon wafer, and belongs to the technical field of
semiconductor silicon wafer processing, and the process method comprises the following operation steps: S1, pre-cleaning and activation: placing the
silicon wafer in a first cleaning tank, introducing
ozone into
ultrapure water, and
processing in cooperation with low-frequency
ultrasound; and S2, main cleaning and complexing: placing the silicon wafer subjected to pre-cleaning and activating treatment in a second cleaning tank, and treating the silicon wafer in a dilute
citric acid solution in cooperation with high-frequency
ultrasound. And S3, overflow rinsing: placing the silicon wafer subjected to main cleaning and complexing treatment in a third cleaning tank. And S4,
drying: carrying out
drying treatment on the silicon wafer subjected to the overflow rinsing treatment. Through the synergistic effect of physical stripping, chemical oxidation and complexing
dissolution, under the condition that highly toxic chemicals such as
hydrofluoric acid are not used, the cleanliness of
metal on the surface of the silicon wafer reaches the ppt level, and the problems that traditional RCA cleaning is serious in environmental
pollution and high in operation risk are effectively solved.