High stable unipolar resistive memory

A resistive variable memory, unipolar technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of difficult practical, incompatibility, complex process, etc., to achieve the suppression of random formation and disconnection, high stability Unipolar resistive switching behavior, the effect of promoting the practical process

Active Publication Date: 2018-02-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these two can indeed improve the stability of unipolar resistive switching, they are too complicated and incompatible with standard CMOS processes to be practical.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High stable unipolar resistive memory
  • High stable unipolar resistive memory
  • High stable unipolar resistive memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] In this example, if figure 1 As shown, the resistive memory has Ta / Ta 2 o 5 / Pt three-layer film structure, silicon dioxide (SiO2) from bottom to top 2 ) insulating substrate layer, platinum (Pt) inert anode layer, tantalum pentoxide (Ta 2 o 5 ) storage medium layer and tantalum (Ta) active cathode layer. Such as figure 1 As shown, because Ta is chemically active and has a high affinity for oxygen, in the Ta cathode layer and Ta 2 o 5 The interfacial layer is formed by spontaneous redox reaction between the storage medium layers, such as image 3 As shown, the Ta cathode layer and Ta 2 o 5 The interface between the storage media layers is blurred due to redox reactions.

[0030] The preparation process of the resistive memory is as follows:

[0031] Step 1: Sequentially ultrasonically clean SiO with acetone, alcohol, and deionized water 2 insulating substrate.

[0032] Step 2: Using DC magnetron sputtering on SiO 2 A Pt inert anode is deposited on the surf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a high stable unipolar resistive memory. The core is a 'chemically inert anode/oxide storage medium/chemically active cathode' three-layer film structure, wherein the oxide storage medium and the chemically active cathode spontaneously perform interface reaction to form an interface layer containing a large amount of oxygen vacancies and sub-oxides; when a voltage is appliedbetween the anode layer and the cathode layer, conductive filaments formed in the oxide storage medium have tip structures near the anode under the action of the interface layer; formation and disconnection of the conductive filaments due to the change of the voltage occur near the tips, thus inhibiting random formation and disconnection of the conductive filaments and achieving a high stable unipolar resistive behavior.

Description

technical field [0001] The invention relates to the technical field of resistive variable memory, in particular to a highly stable unipolar resistive variable memory. Background technique [0002] At the beginning of this century, due to the rapid development of diverse information generation and dissemination channels such as mobile communications, social media, and remote sensing, human society has officially entered the "big data era". Faced with such a wide variety and huge volume of data, the first thing people have to solve is how to store it conveniently, quickly, safely and reliably. At present, the mainstream memories on the market include DRAM, hard disk and flash memory, but each has obvious performance defects, such as the volatility of DRAM, the slow read and write speed of hard disk, and the low endurance of flash memory. sex. Therefore, the global semiconductor industry is urgently looking for a new type of memory that can combine the advantages of DRAM, har...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/00H10N70/00
Inventor 高双李润伟刘钢
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap