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High stable unipolar resistive memory

A resistive variable memory, unipolar technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of difficult practical, incompatibility, complex process, etc., to achieve the suppression of random formation and disconnection, high stability Unipolar resistive switching behavior, the effect of promoting the practical process

Active Publication Date: 2018-02-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these two can indeed improve the stability of unipolar resistive switching, they are too complicated and incompatible with standard CMOS processes to be practical.

Method used

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  • High stable unipolar resistive memory
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  • High stable unipolar resistive memory

Examples

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Embodiment 1

[0029] In this example, if figure 1 As shown, the resistive memory has Ta / Ta 2 o 5 / Pt three-layer film structure, silicon dioxide (SiO2) from bottom to top 2 ) insulating substrate layer, platinum (Pt) inert anode layer, tantalum pentoxide (Ta 2 o 5 ) storage medium layer and tantalum (Ta) active cathode layer. Such as figure 1 As shown, because Ta is chemically active and has a high affinity for oxygen, in the Ta cathode layer and Ta 2 o 5 The interfacial layer is formed by spontaneous redox reaction between the storage medium layers, such as image 3 As shown, the Ta cathode layer and Ta 2 o 5 The interface between the storage media layers is blurred due to redox reactions.

[0030] The preparation process of the resistive memory is as follows:

[0031] Step 1: Sequentially ultrasonically clean SiO with acetone, alcohol, and deionized water 2 insulating substrate.

[0032] Step 2: Using DC magnetron sputtering on SiO 2 A Pt inert anode is deposited on the surf...

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Abstract

The invention provides a high stable unipolar resistive memory. The core is a 'chemically inert anode / oxide storage medium / chemically active cathode' three-layer film structure, wherein the oxide storage medium and the chemically active cathode spontaneously perform interface reaction to form an interface layer containing a large amount of oxygen vacancies and sub-oxides; when a voltage is appliedbetween the anode layer and the cathode layer, conductive filaments formed in the oxide storage medium have tip structures near the anode under the action of the interface layer; formation and disconnection of the conductive filaments due to the change of the voltage occur near the tips, thus inhibiting random formation and disconnection of the conductive filaments and achieving a high stable unipolar resistive behavior.

Description

technical field [0001] The invention relates to the technical field of resistive variable memory, in particular to a highly stable unipolar resistive variable memory. Background technique [0002] At the beginning of this century, due to the rapid development of diverse information generation and dissemination channels such as mobile communications, social media, and remote sensing, human society has officially entered the "big data era". Faced with such a wide variety and huge volume of data, the first thing people have to solve is how to store it conveniently, quickly, safely and reliably. At present, the mainstream memories on the market include DRAM, hard disk and flash memory, but each has obvious performance defects, such as the volatility of DRAM, the slow read and write speed of hard disk, and the low endurance of flash memory. sex. Therefore, the global semiconductor industry is urgently looking for a new type of memory that can combine the advantages of DRAM, har...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/00H10N70/00
Inventor 高双李润伟刘钢
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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