The invention discloses a ZnCuInS / ZnS
quantum dot
white light LED (
Light Emitting Diode) based on compensation light emitting and a manufacturing method thereof. The LED is in a dual-layer light-emitting structure and comprises a glass substrate, a transparent ITO (
Indium Tin Oxide)
electrode deposited on the glass substrate, a PEDOT:PPS(Poly(3,4-
ethylenedioxy Thiophene):(Poly(4-styrenesulfonate)) layer which is formed on the ITO
electrode by
spin coating, a Poly-TPD (N,N'-bis(4-butylpheny)-N,N'-bis(phenyl)
benzidine) layer which is formed on the PEDOT:PPS layer by
spin coating to generate blue and
green light, a ZnCuInS / ZnS
quantum dot layer which is formed on the Poly-TPD layer to generate
red light as well as an Al
electrode, wherein the PEDOT:PPS layer is a buffer layer; the ITO electrode is transparent and is used as a positive electrode of the LED; the Poly-TPD layer generates the blue and
green light; and the ZnCuInS / ZnS
quantum dot layer generates
red light which is complemented with the blue and
green light which are generated by the Poly-TPD layer to form
white light. According to the ZnCuInS / ZnS
quantum dot white light LED disclosed by the invention, a non-toxic metallic ZnCuInS / ZnS
quantum dot is used as a main light-emitting layer, and thus the requirement of environment protection is met; and the ZnCuInS / ZnS
quantum dot white light LED has the advantages of favorable color rendering property, simple preparation process, low cost and the like.