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ZnCuInS/ZnS quantum dot white light LED (Light Emitting Diode) based on compensation light emitting and manufacturing method thereof

A production method and technology of quantum dots, which are applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., to achieve the effect of simple preparation process, simple preparation and good color rendering

Inactive Publication Date: 2012-10-10
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] Using ZnCuInS / ZnS quantum dots and Poly-TPD organic materials, using the principle of complementary light emission to obtain white light LEDs, no related reports have been seen in China

Method used

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  • ZnCuInS/ZnS quantum dot white light LED (Light Emitting Diode) based on compensation light emitting and manufacturing method thereof
  • ZnCuInS/ZnS quantum dot white light LED (Light Emitting Diode) based on compensation light emitting and manufacturing method thereof
  • ZnCuInS/ZnS quantum dot white light LED (Light Emitting Diode) based on compensation light emitting and manufacturing method thereof

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Embodiment Construction

[0044] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0045] refer to figure 1 As described above, it is an overall structural diagram of a ZnCuInS / ZnS quantum dot white light LED based on compensation luminescence of the present invention. It can be seen that the present invention adopts a double-layer light-emitting structure, mainly composed of a glass substrate 1, which is transparently deposited on the glass substrate 1 ITO electrode 2, spin-coated on the PEDOT:PSS layer 3 on the ITO electrode 2, spin-coated on the PEDOT:PSS layer 3 to produce blue-green Poly-TPD layer 4, spin-coated on the Poly-TPD layer 4 to produce red The optical ZnCuInS / ZnS quantum dot layer 5 and the Al electrode 6 thermally evaporated on the ZnCuInS / ZnS quantum dot layer 5 are composed.

[0046] The PEDOT:PSS layer 3 is a buffer layer, which is used to improve the electrode performance of the ITO electrode 2 .

[0047] The ITO electrode 2...

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Abstract

The invention discloses a ZnCuInS / ZnS quantum dot white light LED (Light Emitting Diode) based on compensation light emitting and a manufacturing method thereof. The LED is in a dual-layer light-emitting structure and comprises a glass substrate, a transparent ITO (Indium Tin Oxide) electrode deposited on the glass substrate, a PEDOT:PPS(Poly(3,4-ethylenedioxy Thiophene):(Poly(4-styrenesulfonate)) layer which is formed on the ITO electrode by spin coating, a Poly-TPD (N,N'-bis(4-butylpheny)-N,N'-bis(phenyl) benzidine) layer which is formed on the PEDOT:PPS layer by spin coating to generate blue and green light, a ZnCuInS / ZnS quantum dot layer which is formed on the Poly-TPD layer to generate red light as well as an Al electrode, wherein the PEDOT:PPS layer is a buffer layer; the ITO electrode is transparent and is used as a positive electrode of the LED; the Poly-TPD layer generates the blue and green light; and the ZnCuInS / ZnS quantum dot layer generates red light which is complemented with the blue and green light which are generated by the Poly-TPD layer to form white light. According to the ZnCuInS / ZnS quantum dot white light LED disclosed by the invention, a non-toxic metallic ZnCuInS / ZnS quantum dot is used as a main light-emitting layer, and thus the requirement of environment protection is met; and the ZnCuInS / ZnS quantum dot white light LED has the advantages of favorable color rendering property, simple preparation process, low cost and the like.

Description

technical field [0001] The invention relates to the technical field of LEDs and manufacturing methods thereof, in particular to a novel non-toxic, green and environment-friendly ZnCuInS / ZnS quantum dot white light LED based on compensation luminescence and a manufacturing method thereof. Background technique [0002] First, some acronyms in this technical field are introduced: [0003] LED——Light-emitting diode, abbreviated as LED; [0004] Polytriphenylamine—Poly(N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)benzidine, abbreviated as Poly-TPD; [0005] Quantum dot - Quantum dot, abbreviated as QD; [0006] Quantum dot LED——Quantum dot light emitting device, abbreviated as QD-LED; [0007] Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid)——Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate), abbreviated as PEDOT:PSS; [0008] Tin-doped indium oxide - indium (III) oxide (In 2 o 3 )and tin (Group IV) oxide (SnO 2 ) mixture, usually with a mass ratio of 90% In ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 张宇翟微微张佳全于伟泳王一丁张铁强林晓珑冯毅
Owner JILIN UNIV
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