Nitride semiconductor structure and semiconductor light-emitting element
A nitride semiconductor, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of loss of carriers, affecting the luminous efficiency of light-emitting diodes, and reducing the luminous efficiency of light-emitting diodes.
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[0035] The purpose of the present invention and its structural design and functional advantages will be described according to the following drawings and preferred embodiments, so as to have a more in-depth and specific understanding of the present invention.
[0036] First, in the description of the following embodiments, it should be understood that when it is indicated that a layer (or film) or a structure is disposed "on" or "under" another substrate, another layer (or film), or another structure, It can be "directly" located on other substrates, layers (or films), or another structure, or can be configured "indirectly" with more than one intermediate layer between them. The location of each layer can be described with reference to the drawings.
[0037] see figure 1 As shown, it is a schematic cross-sectional view of a nitride semiconductor structure provided by a preferred embodiment of the present invention, which includes an N-type semiconductor layer 2 and a P-type s...
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