Preparation methods of SiC device gate dielectric layer and SiC device structure

Abstract

The invention provides preparation methods of a SiC device gate dielectric layer and a SiC device structure. The preparation method of a gate dielectric layer includes the following steps: providing a SiC substrate, and placing the SiC substrate in an ALD reaction chamber; heating the ALD reaction chamber to a temperature suitable for the growth of a gate dielectric layer to be formed subsequently; and forming a gate dielectric layer on the surface of the SiC substrate through an ALD process. According to the technical scheme, Si atoms in a SiC epitaxial wafer are not consumed in the growth process of the gate dielectric layer, so that the phenomenon of C group aggregation at the interface of a gate dielectric film and SiC is avoided, and the interface property is improved. The gate dielectric layer is formed through an ALD technology, the thermal budget is low, and the device preparation process is simplified. The gate dielectric layer formed through the ALD technology has the advantages of high critical breakdown strength, low leakage and high dielectric constant. The strength of electric field introduced to the gate dielectric film can be greatly reduced, and breakdown of the gate dielectric can be avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, and in particular relates to a preparation method of a SiC device gate dielectric layer and a preparation method of a SiC device structure. Background technique [0002] Silicon carbide (SiC) material, as the third-generation wide bandgap semiconductor material, has the characteristics of high critical breakdown electric field, high thermal conductivity, high electron saturation drift rate, etc., especially in harsh environments such as high temperature or strong corrosiveness, it has great application potential , suitable for making high-temperature, high-frequency, high-power and radiation-resistant devices. The urgent need for the development of the new generation of SiC power electronic device industry will directly affect the upgrading of my country's power electronic equipment and system industry. It is urgent to carry out the layout of the SiC power electronic device indus...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a SiC device gate dielectric layer and a SiC device structure, which is used to solve the high thermal budget and critical breakdown strength of the gate dielectric layer in the prior art Low and large leakage problems

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