NPN type transverse GaN/SiGe HBT device structure and manufacturing method thereof

Abstract

The invention provides an NPN type transverse GaN / SiGe HBT device structure. The structure comprises a sapphire substrate, wherein a SiON oxide layer is formed on a surface of the sapphire substrate;an emitter region, a base region and a collector region which have the same thickness and different widths are formed on the surface of the SiON oxide layer from left to right; N-type doped GaN layersare deposited in the emitter region and the collector region; a P-type doped Si1-rGer layer of which a Ge component is gradually increased from left to right grows in the base region, and r is greater than 0 and less than 1; and electrode leading-out layers of an emitting electrode, a base electrode and a collecting electrode correspondingly grow on the surfaces of the emitting region, the base region and the collector region, all the electrodes are made of the same metal silicide, and the adjacent electrode regions are insulated and isolated through isolation oxide layers. The invention further provides a manufacturing method of the device structure. In the invention, an interface characteristic of a GaN layer and a SiGe layer can be improved, electron mobility of the base region is improved, transition time of the base region is reduced, a frequency of the device is improved, frequency characteristics are more excellent, and meanwhile, a switching speed and a cut-off frequency of the device can be improved by utilizing a metal silicide layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an NPN type lateral GaN / SiGe HBT device structure and a preparation method thereof. Background technique [0002] The traditional semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) have gradually failed to meet the development of modern electronic technology under the requirements of radiation resistance, high temperature, high voltage and high power. Wide bandgap semiconductor GaN electronic devices can be used in high temperature, high voltage, high frequency and harsh environments, such as radar and wireless communication base stations and satellite communications. [0003] Due to its wide band gap, high breakdown voltage, high electron saturation drift velocity, excellent electrical and optical properties, and good chemical stability, GaN is favored in high-frequency, high-power, high-temperature electronic devices. At present, it is repor...

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Problems solved by technology

[0002] Traditional semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) have gradually failed to meet the development of modern electronic technology under the requirements of radiation resistance, high temperature, high voltage and high power.

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