Manufacturing method of fast response UV detector of n-type doped ZnO thin film

An ultraviolet detector and fast response technology, applied in the field of optoelectronic information, can solve the problems of unfavorable application and slow response speed, and achieve the effects of low cost, fast response speed and high sensitivity

Inactive Publication Date: 2010-10-20
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ZnO thin film used in the currently prepared ZnO photoconductive detector has a relatively slow response speed, which is not conducive to practical application.

Method used

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  • Manufacturing method of fast response UV detector of n-type doped ZnO thin film
  • Manufacturing method of fast response UV detector of n-type doped ZnO thin film

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Experimental program
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Effect test

Embodiment approach 1

[0020] A method for making a fast-response ultraviolet detector of an n-type doped ZnO thin film, the method comprising the following steps:

[0021] Step 1, clean the quartz substrate with acetone, ethanol and deionized water;

[0022] Step 2, on the cleaned quartz substrate, grow a Ga-doped ZnO thin film with a thickness of 500nm with a magnetron sputtering device, and its composition ratio is Ga 2 o 3 : ZnO=1wt%: 99wt%;

[0023] Step 3, annealing the grown Ga-doped ZnO film in oxygen at an annealing temperature of 830°C;

[0024] Step 4, on the annealed Ga-doped ZnO thin film, two Al electrodes with a thickness of 140 nm are evaporated using a thermal evaporation device, and the distance between the two Al electrodes is 200 microns.

[0025] The structures fabricated by the above steps are, from bottom to top, a quartz substrate, a Ga-doped ZnO thin film, and a fast-response ultraviolet detector of two Al electrodes with n-type doped ZnO thin films.

Embodiment approach 2

[0027] A method for making a fast-response ultraviolet detector of an n-type doped ZnO thin film, the method comprising the following steps:

[0028] Step 1, the quartz substrate is cleaned with hydrochloric acid, ethanol, and deionized water;

[0029] Step 2, on the cleaned quartz substrate, grow a Ga-doped ZnO thin film with a thickness of 1000 nm with a magnetron sputtering device, and its composition ratio is Ga 2 o 3 : ZnO=3wt%: 97wt%;

[0030] Step 3, annealing the grown Ga-doped ZnO film in oxygen at an annealing temperature of 700°C;

[0031] Step 4, on the annealed Ga-doped ZnO thin film, two Al electrodes with a thickness of 100 nm are evaporated using a magnetron sputtering device, and the distance between the electrodes is 5 microns.

[0032] The structures fabricated by the above steps are, from bottom to top, a quartz substrate, a Ga-doped ZnO thin film, and a fast-response ultraviolet detector of two Al electrodes with n-type doped ZnO thin films.

Embodiment approach 3

[0034] A method for making a fast-response ultraviolet detector of an n-type doped ZnO thin film, the method comprising the following steps:

[0035] Step 1, clean the quartz substrate with acetone, ethanol, isopropanol;

[0036] Step 2, on the cleaned quartz substrate, grow a Ga-doped ZnO thin film with a thickness of 1200nm with a magnetron sputtering device, and its composition ratio is Ga 2 o 3 : ZnO=0.5wt%: 99.5wt%;

[0037] Step 3, anneal the grown Ga-doped ZnO film in oxygen at a temperature of 900° C.; Step 4, use thermal evaporation equipment to vapor-deposit two Al particles with a thickness of 200 nm on the annealed Ga-doped ZnO film. Electrodes, the distance between two Al electrodes is 2000 microns.

[0038] The structure fabricated by the above steps is sequentially from bottom to top: a quartz substrate, a Ga-doped ZnO thin film, and a fast-response ultraviolet detector of Ga-doped ZnO thin films with two Al electrodes.

[0039] The n-type doped ZnO film in ...

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Abstract

The invention relates to a manufacturing method of a fast response UV detector of an n-type doped ZnO thin film, which belongs to the field of optoelectronics information, solves the problem of low response speed of a ZnO photoconductive detector, and comprises the following steps: step 1: thoroughly cleaning a quartz substrate through a chemical cleaning method; step 2: growing a Ga-doped ZnO thin film on the thoroughly cleaned quartz substrate; step 3: putting the grown Ga-doped ZnO thin film under oxygen atmosphere to be annealed; step 4: vapor depositing two Al electrodes on the annealed Ga-doped ZnO thin film, wherein the structure sequentially comprises the following the quartz substrate, the Ga-doped ZnO thin film and the two Al electrodes from down to up. The mass ratio of the components of the Ga-doped ZnO thin film is as follows: Ga2O3:ZnO=(0.5 to 3 percent):(97 to 99.5 percent). The manufacturing method of the fast response UV detector of the n-type doped ZnO thin film can be used for environmental protection, fire detection, astronomical observation, biological medicine, medical health and other fields.

Description

technical field [0001] The invention belongs to the field of optoelectronic information, and in particular relates to a method for manufacturing a Ga-doped ZnO thin-film fast-response ultraviolet detector. Background technique [0002] Ultraviolet detectors are key components in many application fields, such as flame sensing, environmental monitoring, astronomical observation and research, medical health and bioengineering, etc., so it is very important to develop materials and devices for this detection technology of. [0003] As a direct wide bandgap material, ZnO has a band gap of 3.37eV at room temperature and an exciton binding energy as high as 60meV, and the ZnO thin film has the advantages of simple preparation and low growth temperature. focus on. The ZnO thin film used in the currently prepared ZnO photoconductive detector has a relatively slow response speed, which is not conducive to practical application. Contents of the invention [0004] The invention aim...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0296
CPCY02P70/50
Inventor 孙建张希清刘凤娟黄海琴王永生
Owner BEIJING JIAOTONG UNIV
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