8 results about "Photoconductive detector" patented technology

The invention relates to the technical field of microwave semiconductor testing, and discloses a dynamic calibration system for the sensitivity of a microwave photoconductivity tester, which comprises a dual-port orthogonal coupling resonant cavity module provided with a primary port and a secondary port which are orthogonally isolated; the variable capacitance-variable resistance composite modulation perturbation module is connected to the secondary port and is used for generating analog photoelectric response complex impedance disturbance; the vector microwave transceiving and demodulation module is connected to the main port and outputs I / Q signals; the complex impedance track fitting control module is used for driving the perturbation module based on a physical model; the dynamic vector calibration and signal processing module is used for calculating a system transfer function and executing vector projection denoising, the composite modulation perturbation module is used for generating complex impedance disturbance simulating semiconductor photoelectric response at a resonant cavity secondary port, and the vector receiving and transmitting module is combined to obtain a system instantaneous vector transfer function; a system drift error is eliminated by performing de-embedding processing on a measurement signal, and orthogonal noise is eliminated by using a vector projection algorithm.

The disclosed methods integrate EMI shielding with visible-to-IR or IR photodetection functionalities in flexible semiconductor / 2D material devices, including photodiodes and photoconductive detectors. The processes generally involve transferring a 2D material onto a semiconductor membrane, depositing dielectric layers for electrical isolation and material protection, patterning windows and electrodes using photolithography and etching techniques, and forming top and bottom electrical contacts through metal deposition and lift-off processes. Additional steps include fabricating contact pads on a flexible receiving substrate, bonding the multifunctional material stack to the substrate, and releasing the structure through selective wet or dry etching of a sacrificial layer. The released device is then transferred, often via deionized water, and adhered to the flexible substrate, producing a mechanically flexible, multifunctional nanosheet capable of both electromagnetic interference shielding and infrared or broadband photodetection.

The application relates to a preparation method of long-wave and very long-wave infrared quantum dots and application of the quantum dots in photoconductive detectors. The application belongs to the field of infrared colloidal quantum dots. The application aims to solve the technical problems of poor stability of existing large-size quantum dot colloids, low response wavelength and low specific detectivity. The application prepares quantum dots with photoelectric response to long-wave and very long-wave by adjusting the Hg:Te ratio of HgTe quantum dots, simultaneously adopting a method of fast nucleation of a trisubstituted tellurium-containing precursor and continuous growth of a disubstituted tellurium-containing precursor. In addition, precise doping control is realized through surface modification, so that a long enough carrier drift length is obtained, the quantum dot mobility is increased by 100 times, and high responsivity and specific detectivity of the device are facilitated.

The invention belongs to the field of organic material chemistry, and discloses a preparation method and properties of X-type rigid bridging pyrene-triphenylene quadruplex discotic liquid crystal, and the X-type rigid bridging pyrene-triphenylene quadruplex discotic liquid crystal has a structure as shown in a general formula I. The compound shown in the general formula I is mainly synthesized from a pyrene tetraborate compound and a monobromobenzophenanthrene derivative through Suzuki-Miyaura cross coupling, the reaction condition is mild, the steps are simple and efficient, and the atom utilization rate is high. The compound has thermotropic liquid crystal property, the intermediate phase is a columnar phase (Col) and a nematic phase (N), the melting point and clearing point of the discotic liquid crystal compound are improved by introducing a rigid ring serving as a bridge, the temperature range of the liquid crystal intermediate phase is widened, the variety is enriched, and meanwhile, the compound has good fluorescence emission and quantum yield in a solution and a film aggregation state. The maximum responsivity of the organic photoconductive detector prepared by taking the Py-TP6 as the absorption layer is 1.25 A / W (the power is 1.18 mW / cm < 2 >), 2.40 A / W (the power is 1.52 mW / cm < 2 >) and 9.23 A / W (the power is 0.63 mW / cm < 2 >) at the wavelength of 405 nm, 532 nm and 650 nm respectively.

This invention discloses a coupled microstrip antenna element, a determination method thereof, and a coupled antenna photoconductive detector, relating to the field of terahertz technology. The antenna element mainly comprises: an I-shaped antenna and two microstrip antennas with identical structural parameters; an opening is provided at the center of the middle arm of the I-shaped antenna; the two microstrip antennas are symmetrically placed on both sides of the middle arm; the microstrip antenna includes multiple groove structures, with the opening of each groove structure facing the middle arm; the structural parameters of the microstrip antenna include at least the number of groove structures, the groove period, the groove width, and the groove depth; through the resonant coupling effect between the microstrip antenna and the I-shaped antenna, the incident THz wave is localized to the central opening of the I-shaped antenna, enhancing the local electric field strength of the THz wave, thereby improving the detection sensitivity of the coupled antenna photoconductive detector.

The invention discloses a wide-angle multiband polarization coding communication system based on an antimony sulfide detector. The wide-angle multiband polarization coding communication system comprises an antimony sulfide single crystal photoconductive detector, a trans-impedance amplifier, an analog-to-digital converter, a micro-control unit, an asynchronous transceiver module, upper computer software and a power module. The detector has excellent polarization anisotropy, and can effectively detect and recognize polarized light with the wave band of 400 nm to 700 nm in a wide angle range of-90 degrees to 90 degrees. The detector converts a received polarization coding optical signal into a light current, the light current is amplified into a voltage signal through the trans-impedance amplifier, and then the voltage signal is converted into a digital signal through the analog-to-digital converter. And the micro-control unit performs noise reduction processing by adopting a mean filtering algorithm, and finally transmits data to the upper computer through the asynchronous transceiver to realize real-time visual display. The problems that a traditional polarization detection system is limited in angle, poor in wave band compatibility and low in system integration degree are solved, and a high-adaptability and high-integration-degree solution is provided for free space optical communication in a complex light environment.

The invention provides a preparation method of a selenium tellurium photoconductive detector, and belongs to the technical field of photoconductive detectors. According to the method, a tellurium-selenium thin film is prepared through magnetron sputtering, a tellurium oxide passivation layer and a protection layer are generated in the atmosphere through a two-step annealing aftertreatment process, and then a complete detector is prepared and comprises a substrate, the tellurium-selenium thin film, the passivation layer and a metal electrode which are sequentially arranged from bottom to top; the solar cell further comprises a protection layer, the protection layer is located on the surface of the passivation layer between the metal electrodes, and the passivation layer and the protection layer are both protection layers. Experimental results show that the performance of the SeTe photoconductive detector prepared by the method is remarkably improved, particularly, the photoelectric response is improved under the wavelength of 1550 nm, the dark current is reduced to about one order of magnitude, and an effective way is provided for solving the performance bottleneck of the SeTe detector.

An apparatus comprising a photoconductive detector comprising a substrate (260), a detector layer (220) disposed on the substrate (260), and a contact (210) coupled to the detector layer, wherein the detector layer comprises a 3D interconnected conductive network comprising a plurality of interconnected group-IV-VI semiconductors (230) forming group-IV-VI semiconductor cores, and a matrix comprising group-II-VI semiconductors (240) at least partially surrounding the group-IV-VI semiconductor cores, wherein the group-IV-VI semiconductor cores and the matrix collectively form a heterogeneous group-IV-VI / II-VI photoconductive structure. A method comprising obtaining a substrate (260), depositing group-IV-VI semiconductors (230) on the substrate, depositing group-II-VI semiconductors (240) around the group-IV-VI semiconductors to obtain a pre-anneal structure, performing an anneal to obtain a post-anneal structure, and attaching a contact (210) to the post-anneal structure to obtain a photoconductive detector.