14 results about "Photoconductive detector" patented technology

The invention relates to a preparation method of a lead selenide room-temperature medium-wave infrared detector, which comprises the following steps of: (1) depositing a lead selenide film layer on a substrate by adopting a magnetron sputtering technology and taking oxygen as reaction gas; (2) placing the lead selenide film in a horizontal tube furnace, and realizing high-temperature oxidation in normal-pressure pure oxygen; and (3) putting the lead selenide film into a vertical tube furnace, and realizing high-temperature iodination in a normal-pressure environment. The lead selenide thin film is prepared through the magnetron sputtering technology, compared with chemical bath deposition, the quality of the thin film is effectively improved, and large-area and high-uniformity thin film preparation is achieved; the magnetron sputtering film is subjected to high-temperature oxidation-iodination treatment, the magnetron sputtering film has excellent photoresponse to infrared light, and the sensitization technology is specific and clear and good in repeatability; the sensitized lead selenide thin film layer and the top electrode form the photoconductive detector, the specific detection rate of the device is 7.6 * 10 < 9 > Jones at 4.3 microns at the room temperature of a medium-wave infrared band, and the performance is excellent.

The invention relates to the technical field of microwave semiconductor testing, and discloses a dynamic calibration system for the sensitivity of a microwave photoconductivity tester, which comprises a dual-port orthogonal coupling resonant cavity module provided with a primary port and a secondary port which are orthogonally isolated; the variable capacitance-variable resistance composite modulation perturbation module is connected to the secondary port and is used for generating analog photoelectric response complex impedance disturbance; the vector microwave transceiving and demodulation module is connected to the main port and outputs I / Q signals; the complex impedance track fitting control module is used for driving the perturbation module based on a physical model; the dynamic vector calibration and signal processing module is used for calculating a system transfer function and executing vector projection denoising, the composite modulation perturbation module is used for generating complex impedance disturbance simulating semiconductor photoelectric response at a resonant cavity secondary port, and the vector receiving and transmitting module is combined to obtain a system instantaneous vector transfer function; a system drift error is eliminated by performing de-embedding processing on a measurement signal, and orthogonal noise is eliminated by using a vector projection algorithm.

The disclosed methods integrate EMI shielding with visible-to-IR or IR photodetection functionalities in flexible semiconductor / 2D material devices, including photodiodes and photoconductive detectors. The processes generally involve transferring a 2D material onto a semiconductor membrane, depositing dielectric layers for electrical isolation and material protection, patterning windows and electrodes using photolithography and etching techniques, and forming top and bottom electrical contacts through metal deposition and lift-off processes. Additional steps include fabricating contact pads on a flexible receiving substrate, bonding the multifunctional material stack to the substrate, and releasing the structure through selective wet or dry etching of a sacrificial layer. The released device is then transferred, often via deionized water, and adhered to the flexible substrate, producing a mechanically flexible, multifunctional nanosheet capable of both electromagnetic interference shielding and infrared or broadband photodetection.

The application relates to a preparation method of long-wave and very long-wave infrared quantum dots and application of the quantum dots in photoconductive detectors. The application belongs to the field of infrared colloidal quantum dots. The application aims to solve the technical problems of poor stability of existing large-size quantum dot colloids, low response wavelength and low specific detectivity. The application prepares quantum dots with photoelectric response to long-wave and very long-wave by adjusting the Hg:Te ratio of HgTe quantum dots, simultaneously adopting a method of fast nucleation of a trisubstituted tellurium-containing precursor and continuous growth of a disubstituted tellurium-containing precursor. In addition, precise doping control is realized through surface modification, so that a long enough carrier drift length is obtained, the quantum dot mobility is increased by 100 times, and high responsivity and specific detectivity of the device are facilitated.

An apparatus comprises: a photoconductive detector comprising: a substrate (260); a detector layer (220) disposed on the substrate (260), wherein the detector layer comprises a 3D interconnected conductive network comprising: a plurality of interconnected group IV-VI semiconductors (230) forming a group IV-VI semiconductor core; and a matrix comprising group ll-VI semiconductors (240) which at least partially surround the group IV-VI semiconductor core, wherein the group IV-VI semiconductor core and the matrix together form a heterogeneous group IV-VI / II-VI photoconductive structure; and contacts (210) coupled to the detector layer. A method comprises: obtaining a substrate (260); depositing a group IV-VI semiconductor (230) on the substrate; depositing a group ll-VI semiconductor (240) around the group IV-VI semiconductor to obtain a pre-annealed structure; performing annealing to obtain a post-annealed structure; and attaching contacts (210) to the post-annealed structure to obtain a photoconductive detector.

The invention belongs to the field of organic material chemistry, and discloses a preparation method and properties of X-type rigid bridging pyrene-triphenylene quadruplex discotic liquid crystal, and the X-type rigid bridging pyrene-triphenylene quadruplex discotic liquid crystal has a structure as shown in a general formula I. The compound shown in the general formula I is mainly synthesized from a pyrene tetraborate compound and a monobromobenzophenanthrene derivative through Suzuki-Miyaura cross coupling, the reaction condition is mild, the steps are simple and efficient, and the atom utilization rate is high. The compound has thermotropic liquid crystal property, the intermediate phase is a columnar phase (Col) and a nematic phase (N), the melting point and clearing point of the discotic liquid crystal compound are improved by introducing a rigid ring serving as a bridge, the temperature range of the liquid crystal intermediate phase is widened, the variety is enriched, and meanwhile, the compound has good fluorescence emission and quantum yield in a solution and a film aggregation state. The maximum responsivity of the organic photoconductive detector prepared by taking the Py-TP6 as the absorption layer is 1.25 A / W (the power is 1.18 mW / cm < 2 >), 2.40 A / W (the power is 1.52 mW / cm < 2 >) and 9.23 A / W (the power is 0.63 mW / cm < 2 >) at the wavelength of 405 nm, 532 nm and 650 nm respectively.

This invention discloses a coupled microstrip antenna element, a determination method thereof, and a coupled antenna photoconductive detector, relating to the field of terahertz technology. The antenna element mainly comprises: an I-shaped antenna and two microstrip antennas with identical structural parameters; an opening is provided at the center of the middle arm of the I-shaped antenna; the two microstrip antennas are symmetrically placed on both sides of the middle arm; the microstrip antenna includes multiple groove structures, with the opening of each groove structure facing the middle arm; the structural parameters of the microstrip antenna include at least the number of groove structures, the groove period, the groove width, and the groove depth; through the resonant coupling effect between the microstrip antenna and the I-shaped antenna, the incident THz wave is localized to the central opening of the I-shaped antenna, enhancing the local electric field strength of the THz wave, thereby improving the detection sensitivity of the coupled antenna photoconductive detector.

The invention discloses a wide-angle multiband polarization coding communication system based on an antimony sulfide detector. The wide-angle multiband polarization coding communication system comprises an antimony sulfide single crystal photoconductive detector, a trans-impedance amplifier, an analog-to-digital converter, a micro-control unit, an asynchronous transceiver module, upper computer software and a power module. The detector has excellent polarization anisotropy, and can effectively detect and recognize polarized light with the wave band of 400 nm to 700 nm in a wide angle range of-90 degrees to 90 degrees. The detector converts a received polarization coding optical signal into a light current, the light current is amplified into a voltage signal through the trans-impedance amplifier, and then the voltage signal is converted into a digital signal through the analog-to-digital converter. And the micro-control unit performs noise reduction processing by adopting a mean filtering algorithm, and finally transmits data to the upper computer through the asynchronous transceiver to realize real-time visual display. The problems that a traditional polarization detection system is limited in angle, poor in wave band compatibility and low in system integration degree are solved, and a high-adaptability and high-integration-degree solution is provided for free space optical communication in a complex light environment.

The invention belongs to the field of organic material chemistry, and discloses a preparation method and properties of propeller type tetraphenyl ethylene-triphenylene quadruplex discotic liquid crystal, and the propeller type tetraphenyl ethylene-triphenylene quadruplex discotic liquid crystal has a structure as shown in a general formula I. The compound shown in the general formula I is mainly synthesized from tetrabromo-tetraphenylethylene and a benzophenanthrene boric acid ester derivative through Suzuki coupling reaction, the atom utilization rate is high, and the steps are simple and efficient. The compound has thermotropic liquid crystal property, the TPE-TP4 is a smectic phase or a plastic crystal phase, the introduction of thiophene bridging stabilizes a columnar liquid crystal phase, and the temperature of a columnar intermediate phase of the TPE-ThTP4 reaches 213 DEG C or above. The TPE-TP4 and the TPE-ThTP4 both have an aggregation-induced emission enhancement effect, and the fluorescence quantum yield of the solution reaches 84% and 30%. The maximum responsivity of the photoconductive detector prepared by taking the TPE-TP4 as the absorption layer is 4.43 A / W and 8.35 A / W respectively at the wavelength of 650 nm and the wavelength of 405 nm.

The invention discloses a transmitting and receiving integrated terahertz focusing lens based on THz-TDS, and the transmitting and receiving integrated terahertz focusing lens is of an integrated structure, and comprises a light beam parallel part and a light beam focusing part which are coaxially arranged. The light beam parallel part is composed of an upper half lens and a lower half lens which are of the same structure, and the upper half lens and the lower half lens are symmetrically arranged at the front end of the light beam focusing part up and down with the optical axis of the light beam focusing part as the symmetry axis. An incident light beam enters a lower half lens of the light beam parallel part, so that the light beam is continuously propagated to the light beam focusing part as a parallel light beam, is refracted at the light beam focusing part and is transmitted to a to-be-detected target, and the light beam is reflected by the to-be-detected target, penetrates through the transmitting-receiving integrated terahertz focusing lens and reaches the photoconductive detector. According to the invention, the terahertz wave beam can be focused again, the radiation energy loss is greatly reduced, the installation and adjustment difficulty of the terahertz time-domain spectroscopy system is effectively reduced, and the system stability is improved.

The invention discloses a low-power-consumption photoconductive detector and a preparation method thereof, relates to a photoelectric technology, and aims to solve the problems of insufficient balance between high responsivity and low power consumption and the like in the prior art. Comprising an active region semiconductor, a gate dielectric layer and a gate electrode which are sequentially stacked to form a grating effect; one end of the active region semiconductor is provided with a drain electrode, and the other end is provided with a source electrode; the contact between the active region semiconductor and the drain electrode and the contact between the active region semiconductor and the source electrode are Schottky contact. An electron trap is arranged in the gate dielectric layer and is used for absorbing photo-induced electrons generated by the semiconductor in the active region, so that an energy band, far away from the gate dielectric layer, of the semiconductor in the active region moves upwards. The method has the advantages that the dark current is reduced and the light response characteristic is enhanced based on the grating enhancement effect. On-off conversion can be achieved under grid bias, power consumption is reduced, light current and light responsivity are improved, and light detection efficiency is greatly improved.

The invention provides a preparation method of a selenium tellurium photoconductive detector, and belongs to the technical field of photoconductive detectors. According to the method, a tellurium-selenium thin film is prepared through magnetron sputtering, a tellurium oxide passivation layer and a protection layer are generated in the atmosphere through a two-step annealing aftertreatment process, and then a complete detector is prepared and comprises a substrate, the tellurium-selenium thin film, the passivation layer and a metal electrode which are sequentially arranged from bottom to top; the solar cell further comprises a protection layer, the protection layer is located on the surface of the passivation layer between the metal electrodes, and the passivation layer and the protection layer are both protection layers. Experimental results show that the performance of the SeTe photoconductive detector prepared by the method is remarkably improved, particularly, the photoelectric response is improved under the wavelength of 1550 nm, the dark current is reduced to about one order of magnitude, and an effective way is provided for solving the performance bottleneck of the SeTe detector.

The utility model discloses an infrared light conductivity detector which comprises an infrared light source, a light chamber, a micro-packed chromatographic column and a photoconductive detector, a gas inlet and a gas outlet are formed in the two opposite side walls of the light chamber respectively, the center line of the gas inlet and the center line of the gas outlet are not collinear, the movement distance of gas in the light chamber is increased, the gas can absorb infrared rays more sufficiently, the infrared light source and the photoconductive detector are arranged at the oppositely-arranged light through holes respectively, and the infrared light source and the photoconductive detector are arranged in the light through holes respectively. The infrared light source is a direct light source, loss of an optical path is avoided, after gas to be detected is separated by the micro-packed chromatographic column, gas with various single components is formed and enters the light chamber through the gas inlet in sequence, and compared with the mode that unseparated mixed component gas directly enters the light chamber, the detection sensitivity is improved, the detection optical path is shortened, and the detection accuracy is improved. Therefore, the size of the light chamber is reduced and a user can carry the light chamber conveniently.

An apparatus comprising a photoconductive detector comprising a substrate (260), a detector layer (220) disposed on the substrate (260), and a contact (210) coupled to the detector layer, wherein the detector layer comprises a 3D interconnected conductive network comprising a plurality of interconnected group-IV-VI semiconductors (230) forming group-IV-VI semiconductor cores, and a matrix comprising group-II-VI semiconductors (240) at least partially surrounding the group-IV-VI semiconductor cores, wherein the group-IV-VI semiconductor cores and the matrix collectively form a heterogeneous group-IV-VI / II-VI photoconductive structure. A method comprising obtaining a substrate (260), depositing group-IV-VI semiconductors (230) on the substrate, depositing group-II-VI semiconductors (240) around the group-IV-VI semiconductors to obtain a pre-anneal structure, performing an anneal to obtain a post-anneal structure, and attaching a contact (210) to the post-anneal structure to obtain a photoconductive detector.