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MgZnO film and band gap adjusting method and application thereof

An adjustment method and thin film technology, which can be used in electrical components, circuits, semiconductor devices, etc., and can solve the problems of difficulty in obtaining MgZnO alloys.

Pending Publication Date: 2022-03-18
ZHONGKAI UNIV OF AGRI & ENG
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Problems solved by technology

Therefore, the MgZnO alloy with high Mg composition has unique application research value. At the same time, because the high Mg composition easily leads to phase separation, it is difficult to obtain a single-phase MgZnO alloy.
[0004] The use of MgZnO for ultraviolet detection was studied, and it was found that the heterojunction MgZnO film grown under this condition showed high sensitivity in ultraviolet detection, but due to the phase separation of the film, it indicated that the current process conditions need to be continuously improved.

Method used

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  • MgZnO film and band gap adjusting method and application thereof
  • MgZnO film and band gap adjusting method and application thereof
  • MgZnO film and band gap adjusting method and application thereof

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Embodiment Construction

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout.

[0040] see Figure 8 to Figure 11 , the invention provides a kind of MgZnO film and its bandgap adjustment method and application, comprising the following steps,

[0041] S101: Observing the MgZnO thin film according to the SEM image, AFM image, and EDS image of the MgZnO thin film;

[0042] S1011: SEM images, AFM images and EDS images of the prepared MgZnO thin film;

[0043] S1012: The surface of the film obtained by ALD low-temperature growth is observed from the SEM image to be flat and continuous;

[0044] S1013: Observing the uniform distribution and roughness of the film from the AFM image;

[0045] S1014: Obtain the distribution of Mg, Zn and O from the surface of the EDS map by using the ALD low-temp...

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Abstract

The invention relates to the technical field of MgZnO film band gap adjustment, in particular to a MgZnO film and a band gap adjustment method and application thereof, and the method comprises the following steps: observing the MgZnO film according to an SEM diagram, an AFM diagram and an EDS diagram of the MgZnO film; an MgZnO thin film is obtained based on an ALD technology and a low-temperature growth technology, and a planar photoconductive detector is prepared; a semiconductor parameter analyzer is adopted to test the characteristics of the planar photoconductive detector; performing a photoresponse switch test on the device; and performing transmission spectrum test analysis on the returned sample to determine whether the device has spectral selectivity or not, so that phase splitting of the film can be avoided.

Description

technical field [0001] The invention relates to the technical field of bandgap adjustment of MgZnO thin films, in particular to a MgZnO thin film and its bandgap adjustment method and application. Background technique [0002] At present, on the one hand, ZnO doped with Mg can construct heterojunctions, which is convenient for us to study the electron transport behavior of semiconductor heterostructures through polarization phenomena. On the other hand, it also plays an important role in energy band engineering, such as facing 47 wide bandgap Oxide semiconductor carrier control technology and energy band engineering and application research in the field of short-wavelength photodetection devices. Compared with other wide bandgap materials such as GaN and SiC, ZnO raw materials are easy to obtain, with strong film-forming properties and good stability. After doping the Mg component to form the MgZnO alloy semiconductor, the band gap can be adjusted between 3.3eV (ZnO) and 7....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/18H01L21/66
CPCH01L31/02966H01L31/1832H01L22/12H01L22/14
Inventor 董美林丽君郭建军季旭刘同来孔壹右叶俊伟李家蝉梁志华陈杰鑫马佳升
Owner ZHONGKAI UNIV OF AGRI & ENG
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