A photoconductive organic semiconductor detector and its preparation method

Abstract

The invention discloses a photoconductive organic semiconductor detector, which is formed by stacking a quartz plate substrate, metal nanoparticles, an organic insulating layer, an organic photosensitive layer and a metal electrode from bottom to top; the metal nano particles and the organic photosensitive layer produce localized plasmon resonance. The invention also discloses a preparation method of the photoconductive organic semiconductor detector. The invention solves the problem of large dark current in existing organic semiconductor detectors and breaks through the limitation of photoconductive detectors on the high mobility of materials. The photoconductive organic semiconductor detector of the invention has the advantages of simple structure, high detection ratio, fast response speed, etc., and has important application value and economic value in military, civil and some specific fields.

Description

technical field

[0001] The invention relates to an organic semiconductor detector, in particular to a photoconductive organic semiconductor detector and a preparation method thereof. Background technique

[0002] Optical detectors are widely used in the fields of optical communication, remote control devices and image sensing, and low noise, high quantum efficiency, large detection ratio and fast response speed are important indicators to measure the performance of detectors. Traditional photodetectors are mainly divided into two categories: photovoltaic detectors and photoconductive detectors. At present, the main research in organic materials is photovoltaic organic semiconductor detectors. Its short electrode distance (≈100nm) can ensure that the carriers in the organic photosensitive materials can quickly move to the electrodes, which makes the disadvantages of low mobility of organic materials. It can be compensated, but at the same time, the short electrode distance b...

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