7results about How to "High switching ratio" patented technology

The invention belongs to the technical field of thermal switches, and particularly relates to an expansion type thermal switch based on a paper-cut structure, which comprises a thermal expansion paper-cut structure, the thermal expansion paper-cut structure is a central symmetry structure, two ends of the thermal expansion paper-cut structure are fixedly connected through a fixing plate, and the top end of the thermal expansion paper-cut structure is fixedly connected with the bottom end of a fixed heat source; the negative thermal expansion paper-cut structure is of a central symmetry structure, the two ends of the negative thermal expansion paper-cut structure are fixedly connected through a fixing plate, and the bottom end of the negative thermal expansion paper-cut structure is fixedly connected with the top end of the fixed cold source; the thermal expansion paper-cut structure and the negative thermal expansion paper-cut structure are horizontally arranged in parallel, a first gap is reserved between the bottom end of the thermal expansion paper-cut structure and the top end of the fixed cold source, and a second gap is reserved between the top end of the negative thermal expansion paper-cut structure and the bottom end of the fixed heat source. The invention has the advantages of larger thermal stroke, extremely small contact thermal resistance, larger switch ratio and long service life in overheat and overcold space environments.

The invention discloses a volatile threshold switching device based on an atomic-scale geometric confinement layer and a preparation method thereof. The device comprises a substrate layer, a bottom electrode layer, a functional active layer, a geometric confinement layer and a top electrode layer which are stacked in sequence, the functional active layer is used for providing active metal ions to form conductive filaments; the functional active layer is made of a two-dimensional layered ferroelectric material; the geometric confinement layer is made of hexagonal boron nitride sheets, and the thickness range of the hexagonal boron nitride sheets is 1-5 hexagonal boron nitride atomic layers. According to the invention, the h-BN material with atomic-scale lattice defects is introduced as the geometric confinement layer, and the diameter of the conductive filament formed by copper ions in the functional active layer is physically limited by using the atomic-scale ion sieve effect of the h-BN material, so that the problem of failure caused by overgrowth of the filament in a traditional device is solved.

This invention discloses a high-mobility spin field-effect transistor (SFET), comprising a source electrode, a drain electrode, a gate electrode, a semiconductor channel, and a substrate. Compared to existing SFETs based on a single semiconductor channel, this semiconductor channel structure offers advantages such as tunable band structure, high mobility, tunable carrier concentration and type, and long spin diffusion length. Compared to traditional substrate-based SFETs, this invention introduces a substrate with piezoelectric properties, allowing for the modulation of carrier spin transport within the semiconductor channel through the surface polarization electric field of the substrate. This effectively reduces the turn-on or turn-off voltage and improves gate control. Compared to existing SFET fabrication processes, this invention optimizes the crystal quality of the spin tunneling layer, increases carrier spin polarization, thereby improving the device's on / off ratio and reducing operating current.

This invention discloses a single-pixel reconfigurable dual-mode phototransistor and its fabrication method, along with a pixel array and image edge extraction method. Different polarities are applied to the single-pixel reconfigurable dual-mode phototransistor. Based on a floating base region photogenerated charge accumulation—barrier modulation—transistor gain—Schottky junction photosensitive coupling mechanism, the same pixel switches between two operating modes. Mode one is a switching mode with low dark current and a high on / off ratio threshold triggering function; mode two is a linear mode with a linear analog response and current gain. Utilizing this dual-mode operating mechanism, a sparse operator image edge extraction method of "first screening, then precise measurement" is implemented, reducing system computation and readout overhead at the device level.

The application discloses a kind of phthalocyanine copper / inverted pyramid perovskite heterojunction photodetector and preparation method, comprising the following steps: 1) etching out the silicon piece with pyramid surface microstructure, as the base of growing perovskite single crystal;2) preparation perovskite solution, utilize silicon piece and glass piece as the frame of growth area restriction, utilize seed growth method, space limited method and inverse temperature crystallization method combined growth method preparation surface pyramid perovskite single crystal;3) utilize thermal evaporation in perovskite single crystal surface evaporation phthalocyanine copper film formation heterojunction, then utilize conductive carbon paste as upper and lower electrode preparation photodetector.The photodetector prepared by the application is stable at normal temperature and pressure, and has better photoelectric response relative to the control group device in a high humidity environment, and the device has good long-time humidity stability, which has guiding significance for the future high-performance photodetection field in high humidity environment such as sea, ship and island.

A single-phase oxide ferroelectric semiconductor thin film with low dark current and high UVC / UVA ratio, a preparation method and application in a self-powered solar blind detector belong to the technical field of semiconductor detectors.The single-phase oxide ferroelectric semiconductor thin film is composed of a ZnO thin film co-doped with Mg, Al and Li as an active absorption layer and a silicon substrate, is prepared through a co-doping strategy of Mg, Al and Li, and is applied in a solar blind detector through a matching electric field heat treatment process, so that the band gap of pure ZnO is effectively widened to the solar blind region, the built-in electric field generated by the donor-acceptor defect dipole constructed in the crystal lattice is utilized, and the high insulating state of the material is maintained through the charge compensation effect, so that the high-performance self-powered solar blind ultraviolet detection with low dark current, high responsivity and high on-off ratio is realized under zero applied bias.

The application discloses an application of a tripyridyl triazine zinc bromide complex in preparation of a photoelectric / radiation detector and belongs to the technical field of semiconductor photoelectric materials and devices. The application opens up a new use of a known material, the tripyridyl triazine zinc bromide complex, and realizes regulation of carrier transport performance by using free radicals generated by photoinduced electron transfer (PIET) in the ZnBr2(2-TPT) complex for the first time, breaks through the traditional cognition that the material is only used for optical discoloration, and successfully applies the material to the field of electrical detection. The photoelectric / radiation detector based on the tripyridyl triazine zinc bromide complex has high-performance detection performance: the detector prepared based on the ZnBr2(2-TPT) complex has extremely low dark current (originating from high resistance of the material in a dark state) and significant photocurrent response, realizes high on-off ratio and high sensitivity, and can effectively detect weak ultraviolet light and high-energy X rays.