2results about How to "High switching ratio" patented technology

The application discloses a kind of phthalocyanine copper / inverted pyramid perovskite heterojunction photodetector and preparation method, comprising the following steps: 1) etching out the silicon piece with pyramid surface microstructure, as the base of growing perovskite single crystal;2) preparation perovskite solution, utilize silicon piece and glass piece as the frame of growth area restriction, utilize seed growth method, space limited method and inverse temperature crystallization method combined growth method preparation surface pyramid perovskite single crystal;3) utilize thermal evaporation in perovskite single crystal surface evaporation phthalocyanine copper film formation heterojunction, then utilize conductive carbon paste as upper and lower electrode preparation photodetector.The photodetector prepared by the application is stable at normal temperature and pressure, and has better photoelectric response relative to the control group device in a high humidity environment, and the device has good long-time humidity stability, which has guiding significance for the future high-performance photodetection field in high humidity environment such as sea, ship and island.

The application discloses an application of a tripyridyl triazine zinc bromide complex in preparation of a photoelectric / radiation detector and belongs to the technical field of semiconductor photoelectric materials and devices. The application opens up a new use of a known material, the tripyridyl triazine zinc bromide complex, and realizes regulation of carrier transport performance by using free radicals generated by photoinduced electron transfer (PIET) in the ZnBr2(2-TPT) complex for the first time, breaks through the traditional cognition that the material is only used for optical discoloration, and successfully applies the material to the field of electrical detection. The photoelectric / radiation detector based on the tripyridyl triazine zinc bromide complex has high-performance detection performance: the detector prepared based on the ZnBr2(2-TPT) complex has extremely low dark current (originating from high resistance of the material in a dark state) and significant photocurrent response, realizes high on-off ratio and high sensitivity, and can effectively detect weak ultraviolet light and high-energy X rays.