Preparation method of graphene flash memory

Abstract

The invention provides a preparation method of a graphene flash memory. According to the method, a single-layer or multi-layer continuous graphene thin film replaces a polysilicon gate or nitric oxide to store electric charges, the storage capacity of the electric charges is improved within a limited physical space, and as the graphene is relatively thin, the influence of capacity coupling in a device is eliminated while the longitudinal dimension of the device is diminished, so that the problem of crosstalk of adjacent storage units in work is effectively avoided. The graphene flash memory is simple in process and convenient in operation, and the data of the graphene flash memory are rapidly written, erased and read at the low power consumption.

Description

technical field [0001] The invention belongs to the field of manufacturing semiconductor devices, and relates to a preparation method of a graphene flash memory. Background technique [0002] In the semiconductor storage device, the flash memory is a non-volatile memory, and has the advantage that data can be stored, read, and erased multiple times, and the stored data will not disappear even after the power is turned off. Therefore, in recent years, flash memory has been widely used in electronic consumer products, such as: digital cameras, digital cameras, mobile phones, laptop computers, walkmans and other portable flash digital storage products, and has become a solid state One of the important components of products such as hard drives. [0003] Large capacity, high speed, low power consumption, and low price have become the main development trend of flash memory. To store a large amount of data in a limited physical area, it is necessary to reduce the storage unit as ...

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Problems solved by technology

However, as the memory cells become smaller, below a certain cell size, the polysilicon or oxynitride becomes less stable, which in turn affects the performance of the flash memory

In order to ensure the stability of the performance of the flash memory, the thickness of the floating gate transistor must be thicker than the rest of the circuit to accommodate sufficient charge; however, when the thickness of the floating gate transistor is too thick, these thick Floating gate transistor cells often cause interference to other adjacent memory cells, which in turn causes crosstalk problems when adjacent memory cells work

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