101 results about "Subthreshold swing" patented technology

The invention discloses an SOI (silicon on insulator) substrate based ring-gate radiation-proof MOS (metal oxide semiconductor) field-effect transistor. The field-effect transistor comprises an Si substrate (1), a buried oxide layer (2) located in the Si substrate (1) and an epitaxial layer (3) on the Si substrate (1), a drain region (5) is arranged in the middle of the epitaxial layer, a ring gate (4) is arranged over the epitaxial layer and next to the outer boundary of the drain region, lightly doped source drain regions (7) are arranged in the epitaxial layer under the edges of the inner and outer sides of the ring gate (4), and a region between the lightly doped source drain regions forms a channel; a ring source active region (6) is arranged in the epitaxial layer next to the outer edge of the gate, and a ring isolation channel (8) is arranged in the epitaxial layer adjacent to the periphery of the ring source active region (6) and is of a loop structure comprising a gate ring, a source ring and an isolation channel ring sequentially encircling the outside of the passive region. By the field-effect transistor, threshold voltage shift and subthreshold swing degradation are inhibited, total dose radiation performance tolerance of the device is enhanced, and the field-effect transistor is used for preparation of large-scale integrated circuits.