Indium-doped N-type organic thin-film transistor and preparation method thereof

Abstract

The invention discloses an indium-doped N-type organic thin-film transistor and a preparation method thereof. The N-type organic thin-film transistor has a top gate bottom contact structure. The preparation method comprises the following steps: firstly, preparing a layer of gold on a glass substrate through a mask plate to serve as a source electrode and a drain electrode; secondly preparing a layer of indium on a gold electrode to serve as a doped layer; thirdly forming an N-type organic semiconductor active layer on the surface of a sample subjected to electrode preparation by using a sol-gel method; fourthly spin-coating an active layer with a layer of dielectric material to serve as an insulating layer; and finally, preparing aluminum on the surface of the insulating layer through the mask plate to form a gate electrode. Compared with a traditional organic thin-film transistor, the organic thin-film transistor prepared by the method has the advantages that the switching ratio and the carrier mobility are obviously improved, and the subthreshold swing amplitude and the threshold voltage of a device are greatly reduced. The method improves the electrical property of the N-type organic thin-film transistor with the top gate bottom contact structure, and has the characteristics of low cost, simple process steps and wide applicability to the N-type organic thin-film transistor.

Description

technical field [0001] The invention relates to the fields of microelectronic materials and device technology, information display and the like, in particular to an indium-doped N-type organic thin film transistor and a preparation method thereof. Background technique [0002] The use of organic semiconductors as active layers in thin-film transistors has received widespread attention in the past three decades. Compared with field-effect transistors using inorganic semiconductors, organic thin-film transistors using conjugated polymers, low polymers, and fused aromatics as semiconductor materials There are special advantages, for example, it can be used in the production of large-area, flexible, low-temperature processing (close to room temperature), low-cost and transparent new thin film transistors. Organic thin film transistors can be used in active matrix flat-panel displays, organic electroluminescent diodes and "electronic paper" displays, as well as stickable sensors,...

AI Technical Summary

Problems solved by technology

However, there is an extreme shortage of N-type semiconductor materials with high mobility, air stability, and solution preparation, which greatly limits the development of flexible electronic devices and organic integrated circuits based on organic thin film transistors.

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