Indium-doped N-type organic thin-film transistor and preparation method thereof

An organic thin film and transistor technology, which is applied in the field of indium-doped N-type organic thin-film transistor and its preparation, can solve the problems of limiting the development of flexible electronic devices and organic integrated circuits, high mobility, and shortage of N-type semiconductor materials, etc. Improved switching ratio and carrier mobility, low cost, and improved electrical performance

Active Publication Date: 2019-09-20
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is an extreme shortage of N-type semiconductor materials with high mobility, air stability, and solution preparation, ...

Method used

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  • Indium-doped N-type organic thin-film transistor and preparation method thereof
  • Indium-doped N-type organic thin-film transistor and preparation method thereof
  • Indium-doped N-type organic thin-film transistor and preparation method thereof

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Embodiment

[0058] A1: Configuration of semiconductor solution

[0059] The N-type organic semiconductor material and the organic solvent are configured at a mass volume ratio of 8 mg / ml; wherein, the N-type organic semiconductor material is: [N,N'-bis(2-octyldodecyl)-1 , 4,5,8-naphthalene diimide-2,6-two bases-and-5,5'-(2,2'-bithiophene)] polymer (N2200); the organic solvent is chlorobenzene ;

[0060] A2: Configuration of insulating layer solution

[0061] The insulating layer material and the highly soluble organic solvent are configured with a mass volume ratio of 80mg / ml; wherein, the insulating layer material is polymethacrylate (PMMA); the highly soluble organic solvent is methyl acetate ester;

[0062] A3: Dissolution of the solution

[0063] Place the configured semiconductor solution and insulating layer solution on the heating plate at 60°C for 24 hours to dissolve;

[0064] Step 2: Preparation of Devices

[0065] B1: Cleaning of the substrate

[0066] Select an insulati...

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Abstract

The invention discloses an indium-doped N-type organic thin-film transistor and a preparation method thereof. The N-type organic thin-film transistor has a top gate bottom contact structure. The preparation method comprises the following steps: firstly, preparing a layer of gold on a glass substrate through a mask plate to serve as a source electrode and a drain electrode; secondly preparing a layer of indium on a gold electrode to serve as a doped layer; thirdly forming an N-type organic semiconductor active layer on the surface of a sample subjected to electrode preparation by using a sol-gel method; fourthly spin-coating an active layer with a layer of dielectric material to serve as an insulating layer; and finally, preparing aluminum on the surface of the insulating layer through the mask plate to form a gate electrode. Compared with a traditional organic thin-film transistor, the organic thin-film transistor prepared by the method has the advantages that the switching ratio and the carrier mobility are obviously improved, and the subthreshold swing amplitude and the threshold voltage of a device are greatly reduced. The method improves the electrical property of the N-type organic thin-film transistor with the top gate bottom contact structure, and has the characteristics of low cost, simple process steps and wide applicability to the N-type organic thin-film transistor.

Description

technical field [0001] The invention relates to the fields of microelectronic materials and device technology, information display and the like, in particular to an indium-doped N-type organic thin film transistor and a preparation method thereof. Background technique [0002] The use of organic semiconductors as active layers in thin-film transistors has received widespread attention in the past three decades. Compared with field-effect transistors using inorganic semiconductors, organic thin-film transistors using conjugated polymers, low polymers, and fused aromatics as semiconductor materials There are special advantages, for example, it can be used in the production of large-area, flexible, low-temperature processing (close to room temperature), low-cost and transparent new thin film transistors. Organic thin film transistors can be used in active matrix flat-panel displays, organic electroluminescent diodes and "electronic paper" displays, as well as stickable sensors,...

Claims

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Application Information

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IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/30H10K10/464
Inventor 李文武许洋黄凡铭潘哲成胡志高褚君浩
Owner EAST CHINA NORMAL UNIV
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