Indium tin zinc oxide homogeneous thin film transistor and preparation method thereof
A thin-film transistor and oxide technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems that cannot be applied to popular display products, cannot meet the requirements of driving OLED, and the preparation process is complicated, and achieves easy injection and visible light. The effect of transparency and simplified preparation process
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[0037] The method for preparing the indium tin zinc oxide homogeneous thin film transistor includes the following steps:
[0038] 1). The glass or flexible substrate is ultrasonically cleaned. The cleaning solution is semiconductor cleaning agent, anhydrous alcohol, acetone, and then blown dry with high-purity nitrogen;
[0039] 2) The grid is prepared on the substrate by magnetron sputtering, electron beam evaporation and other methods. The grid material can be Al, Mo, Cr, Cu, Ni, Ta, Ag, Au, Ti, Pt and other metal materials. Metal oxide materials such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), IGZO, ITZO, etc., with a gate thickness of 100~400 nm, can also be formed by masking or photolithography;
[0040] 3) Reuse magnetron sputtering, atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD) and other methods to prepare the insulating layer. The material of the insulating layer can be aluminum oxide, hafnium oxide, tantalum oxide, silicon o...
Example Embodiment
[0050] Example 1:
[0051] The ratio of the number of atoms of indium, tin, and zinc to a:b:c=87.44:9.15:3.41 In 2 O 3 , SnO 2 It is evenly mixed with ZnO powder, and then processed into ITZO ceramic target through molding, sintering, machining and polishing; the sintering temperature is 1000-1200℃.
[0052] Using the ITZO ceramic target in this example, the structure was prepared as figure 1 The homogeneous ITZO-TFT shown, where the substrate is a thermally oxidized silicon wafer, where Si is used as the gate and substrate, and SiO 2 As the insulating layer, the thickness is 200 nm; the channel layer is prepared by magnetron sputtering, the sputtering target is the ITZO ceramic target prepared in this example, and the sputtering background vacuum is 1×10 -4 Pa, sputtering gas is Ar / O 2 Mixed gas, argon flow rate is 50 sccm, oxygen flow rate is 5 sccm, pressure is 0.6 Pa, sputtering power is 60 W, and the thickness of the prepared channel layer is 30 nm, which is formed by masking m...
Example Embodiment
[0053] Example 2:
[0054] The ratio of the number of atoms of indium, tin, and zinc to a:b:c=55.17:21.16:23.67 In 2 O 3 , SnO 2 Mix well with ZnO powder and then process ITZO ceramic target through molding, sintering, machining and polishing;
[0055] Using the ITZO target in this example, the structure was prepared as figure 1 Homogeneous ITZO-TFT shown. The substrate is a thermally oxidized silicon wafer, where Si is used as the gate and substrate, and SiO 2 As an insulating layer, the thickness is 200 nm; the channel layer is prepared by magnetron sputtering, the sputtering target is the ITZO target prepared in this example, and the sputtering background vacuum is 1×10 -4 Pa, sputtering gas is Ar / O 2 Mixed gas, argon flow rate is 50 sccm, oxygen flow rate is 5 sccm, pressure is 0.6 Pa, sputtering power is 60 W, and the thickness of the prepared channel layer is 30 nm, which is formed by masking method; source and drain electrodes are magnetically Prepared by a controlled sputt...
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