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Indium tin zinc oxide homogeneous thin film transistor and preparation method thereof

A thin-film transistor and oxide technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems that cannot be applied to popular display products, cannot meet the requirements of driving OLED, and the preparation process is complicated, and achieves easy injection and visible light. The effect of transparency and simplified preparation process

Inactive Publication Date: 2014-07-23
山东大学(威海)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For conventional amorphous silicon TFT devices, the field-induced mobility is low, the photosensitivity is strong, and the stability is poor. It can be used as a driving element for LCDs, but it cannot meet the requirements for driving OLEDs.
Although polysilicon TFT has high field-induced mobility, its preparation process is complicated and the cost is high, so that it cannot be used in popular display products

Method used

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  • Indium tin zinc oxide homogeneous thin film transistor and preparation method thereof
  • Indium tin zinc oxide homogeneous thin film transistor and preparation method thereof
  • Indium tin zinc oxide homogeneous thin film transistor and preparation method thereof

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preparation example Construction

[0037] The preparation method of the above-mentioned indium tin zinc oxide homogeneous thin film transistor comprises the following steps:

[0038] 1) Ultrasonic cleaning of glass or flexible substrates, the cleaning liquid is semiconductor cleaning agent, absolute alcohol, acetone, and then dried with high-purity nitrogen;

[0039] 2) Prepare the gate on the substrate by magnetron sputtering, electron beam evaporation and other methods. The gate material can be Al, Mo, Cr, Cu, Ni, Ta, Ag, Au, Ti, Pt and other metal materials. Indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), IGZO, ITZO and other metal oxide materials can also be used. The thickness of the gate is 100~400 nm, and it can be formed by masking or photolithography;

[0040] 3), and then use magnetron sputtering, atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD) and other methods to prepare the insulating layer, the insulating layer material can be aluminum oxide, hafnium oxide, ...

Embodiment 1

[0051] The atomic number ratio of indium, tin, and zinc is a:b:c=87.44:9.15:3.41 In 2 o 3 , SnO 2 Mix with ZnO powder evenly, and then make ITZO ceramic target through molding, sintering, machining and grinding; the sintering temperature is 1000-1200℃.

[0052] Using the ITZO ceramic target in this example to prepare a structure such as figure 1 The homogeneous ITZO-TFT shown, where the substrate is a thermally oxidized silicon wafer, where Si is used as the gate and substrate, and SiO 2 As an insulating layer, the thickness is 200 nm; the channel layer is prepared by magnetron sputtering method, the target used for sputtering is the ITZO ceramic target prepared in this example, and the background vacuum of sputtering is 1×10 -4 Pa, the sputtering gas is Ar / O 2 Mixed gas, the flow rate of argon gas is 50 sccm, the flow rate of oxygen gas is 5 sccm, the gas pressure is 0.6 Pa, the sputtering power is 60 W, the thickness of the prepared channel layer is 30 nm, and it is for...

Embodiment 2

[0054] The atomic number ratio of indium, tin, and zinc is a:b:c=55.17:21.16:23.67 In 2 o 3 , SnO 2 Mix with ZnO powder evenly and then make ITZO ceramic target through molding, sintering, machining and grinding;

[0055] Using the ITZO target in this example to prepare a structure such as figure 1 Homogeneous ITZO-TFT shown. The substrate is a thermally oxidized silicon wafer, where Si is used as the gate and substrate, and SiO 2 As an insulating layer, the thickness is 200 nm; the channel layer is prepared by magnetron sputtering method, the target used for sputtering is the ITZO target prepared in this example, and the background vacuum of sputtering is 1×10 -4 Pa, the sputtering gas is Ar / O 2 Mixed gas, the flow rate of argon gas is 50 sccm, the flow rate of oxygen gas is 5 sccm, the gas pressure is 0.6 Pa, the sputtering power is 60 W, the thickness of the prepared channel layer is 30 nm, and it is formed by mask method; the source and drain electrodes are formed by...

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Abstract

Provided is an indium tin zinc oxide homogeneous thin film transistor and a preparation method of the thin film transistor. The thin film transistor comprises a substrate, a grid electrode, an insulating layer, a channel layer, a source electrode and a drain electrode. The thin film transistor is characterized in that material of the channel layer, the source electrode and the drain electrode is indium tin zinc oxide. The indium tin zinc oxide is indium tin zinc oxide ceramic target material made of In2O3, SnO2 and ZnO powders via ball grinding and uniform mixing, and technologies of molding, sintering, etc. The atomic number ratio of indium, tin and zinc in the indium tin zinc oxide ceramic target material is a: b: c=35-88: 8-35: 2-25. The indium tin zinc oxide ceramic target material is deposited into a thin film by utilizing a magnetron sputtering mode. The thin film transistor is simple in preparation technology and suitable for industrial production. The surface of an amorphous electrode is great in flatness so as to be better in contact with the interface of the channel layer. Therefore, injection of carriers is easier, mobility is high and on-off ratio is high.

Description

technical field [0001] The invention relates to a thin-film transistor and a preparation method thereof. In detail, it relates to an indium-tin-zinc oxide homogeneous thin-film transistor with simple preparation process, easier carrier injection, high mobility and high switch ratio and a preparation method thereof. Background technique [0002] Since the 21st century, the flat panel display technology industry has developed rapidly. The core component of a flat panel display is a thin film transistor (Thin Film Transistor, TFT). TFT is a field effect semiconductor device, including semiconductor channel layer, insulating layer, gate and source and drain electrodes, substrate and other parts. [0003] The channel layer is a channel for carrier transmission and is the most important factor affecting TFT performance parameters. TFT liquid crystal display (TFT-LCD) is currently the most widely used flat-panel display, and the TFT channel layer in its drive unit is mainly made ...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/66742H01L29/7869
Inventor 杨田林李延辉宋淑梅辛艳青王昆仑童杨王雪霞
Owner 山东大学(威海)
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