5results about How to "Good flatness" patented technology

Provided are a resist underlayer film forming method and a pattern forming method with which it is possible to form a resist underlayer film exhibiting excellent dry etching resistance. The resist underlayer film forming method is a method for forming a resist underlayer film on a substrate, and comprises the following steps: (i) applying a resist underlayer film forming composition containing (A) a polymer and an organic solvent on the substrate to obtain a coating film, and subjecting the coating film to a temperature of 100 DEG C to 800 DEG C for 10 seconds to 7,000 seconds; a step for forming an underlayer film precursor film by curing the underlayer film by heat treatment for 200 seconds; and (ii) curing the underlayer film precursor film by plasma irradiation to form a resist underlayer film. An aromatic ring-containing resin that does not contain a hydroxyl group or an organic group represented by general formula (1) in a repeating unit constituting the polymer is used as the polymer (A). (In general formula (1), p is 0 or 1, and * is a bonding part. > # imgabs0 #

The utility model relates to the technical field of film laminating equipment, and discloses plastic packaging box film laminating equipment which comprises a supporting bottom plate, a heating and cooling mechanism is fixedly connected to the interior of a first supporting base and the interior of a second supporting base, and a cooling fan is fixedly connected to the side, away from the second supporting base, of the second supporting base. A heating fitting column is rotatably connected to the interior of the heat dissipation fan, a cooling plate is fixedly connected to the top side of the interior of the second supporting base, and supporting connecting plates are fixedly connected to the interiors of the two sides of the second supporting base. According to the utility model, through the heat dissipation fan and the heating fitting column, rapid film laminating and fitting on the surface of the plastic box are realized under different conditions, the cooling plate and the heat dissipation holes work cooperatively, heat is absorbed and dissipated effectively, the electric telescopic column and the rolling column further flatten the surface of the plastic box, the film laminating and fitting quality is improved, and the production efficiency is improved; and it is ensured that the surface of the plastic box reaches the optimal flatness and attractiveness after being cooled.

This application relates to a spacing adjustment device, a cabinet, and a refrigerator, specifically in the field of refrigerator technology, and aims to provide a device for facilitating the adjustment of the spacing between the door and the cabinet when closed. The spacing adjustment device includes a housing, a support assembly, and an adjustment assembly. The housing has an adjustment cavity, and a first insertion hole and a second insertion hole communicating with the adjustment cavity. A portion of the support assembly is located within the adjustment cavity, and another portion of the support assembly extends out of the adjustment cavity via the first insertion hole. A portion of the adjustment assembly is inserted into the second insertion hole, and a portion of the adjustment assembly is located within the adjustment cavity. The adjustment assembly is configured to have a switchable first state and a second state. When the adjustment assembly is in the first state, the portion of the adjustment assembly located in the adjustment cavity is drively connected to the support assembly to adjust the insertion depth of the support assembly within the first insertion hole. When the adjustment assembly is in the second state, it prevents the adjustment assembly from driving the support assembly to adjust the insertion depth within the first insertion hole.

The present invention relates to a method for forming a resist underlayer film and a method for forming a pattern, which exhibit excellent dry etching resistance and film thickness uniformity by plasma irradiation. The resist underlayer film forming method includes (i) a step of applying a composition containing (A) a polymer and (B) an organic solvent and performing heat treatment; (ii) a step for forming a resist underlayer film by plasma irradiation, the polymer (A) containing a structural unit represented by formula (1) and having a weight-average molecular weight of 2500-20000; in the formula (1), Ar1 and Ar2 are benzene rings or naphthalene rings, X is a structure of formula (1A), Y is an organic group, and k is 0 or 1. In the formula (1A), n1 is 0 or 1, n2 is 1 or 2, and R2 is a hydrogen atom, an organic group or a structure of formula (1B). R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group represented by formula (1C), and n3 represents 0-2. In formula (1B), RA is an organic group, and RB is a hydrogen atom or an organic group. In formula (1C), R4 represents a hydrogen atom or a hydrocarbon group. # imgabs0 #

The invention relates to a resist underlayer film forming composition, a pattern forming method, and a resist underlayer film forming method. The present invention addresses the problem of providing a composition for forming a resist underlayer film, said composition being capable of forming a resist underlayer film exhibiting excellent dry etching resistance compared to known organic underlayer film materials. A composition for forming a resist underlayer film, characterized by containing (A) a polymer having a structure represented by general formula (1) as a repeating unit and (B) an organic solvent, the molecular weight of the (A) polymer being 300-3,000, and the (A) polymer not containing a repeating unit containing a hydroxyl group as a substituent and not containing a repeating unit containing a heteroaromatic ring. In formula (1) in # imgabs0 #, Ar is an unsubstituted divalent aromatic group having 6 to 30 carbon atoms.