109results about How to "Low resistance）" patented technology

An apparatus comprising a fluidic cartridge including a first and second substrate and an intermediate interlayer is provided. The intermediate interlayer is sealedly interfaced between the first and second substrates to form therein a plurality of channels of capillary dimensions. The apparatus further includes an open reservoir, a pump chamber and a reaction chamber. The open reservoir and reaction chamber are each connected to the pump chamber through the channels. The open reservoir and reaction chamber are in fluid communication with each other via the channels. The apparatus further comprises a fluid flow controlling structure, formed in the fluidic cartridge, which restricts a flow of a fluid through the reaction chamber to one direction. The apparatus further comprises a linear actuator for providing a pumping action in the pump chamber to pump the fluid to flow between the open reservoir and reaction chamber via the plurality of channels and pump chamber.

To obtain low resistance and high adhesion at the same time in a solar cell electrode, a conductive paste is offered. A conductive paste for solar cell electrode contains conductive powder, organic medium and glass frit which is mixture of more than one kind of glass frit such as a mixture of glass frit containing at least PbO and glass frit containing at least Bi2O3.

Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

The present invention provides a liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode / drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate, wherein the semiconductor layer has a width in the gate length direction identical to the gate length.

The present invention provides a micro-electromechanical relay that can produce low electrical contact resistance, and is capable of mechanical latching. More specifically, the present invention combines the clamping actions of cantilever beams with a movable shuttle-like spacer to generate high contact forces at the metal-metal contacts of the micro-electromechanical relay, thereby producing a very low electrical contact resistance and a mechanism for mechanical latching. Methods of fabricating the micro-electromechanical relay are also provided in this invention, which offer the advantages of both design and fabrication flexibilities by processing the top and bottom substrates separately prior to joining them together.

A display device is provided with a light detection unit that detects the intensity of ambient light and is capable of automatically controlling the luminosity of an illumination unit and / or the luminosity of the display device on the basis of the intensity of ambient light detected by the light detection unit. Moreover, the display device makes it possible to easily conduct a test on light-sensor characteristics.

A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on-resistance while maintaining a high breakdown voltage. The semiconductor device includes a semiconductive substrate region, through which a current flows in the ON-state of the device and that is depleted in the OFF-state. The semiconductive substrate region includes a plurality of vertical alignments of n-type buried regions 32 and a plurality of vertical alignments of p-type buried regions. The vertically aligned n-type buried regions and the vertically aligned p-type buried regions are alternately arranged horizontally. The n-type buried regions and p-type buried regions are formed by diffusing respective impurities into highly resistive n-type layers 32a laminated one by one epitaxially.

NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.

An image display device which prevents damage to an electron-emitting device from discharge between a faceplate and a rear plate is provided. A conductive plate 12 including a transparent conductive film is formed over a surface of a substrate 1, a distance specifying member 13 having a plurality of openings is formed on the conductive area 12, a fluorescent material 14 is arranged in the opening, and a conductive film 15 is arranged on the fluorescent material 14 to for a face plate. A resistance Rx between the adjacent conductive films 15 is set larger than a resistance Rz, between the conductive film 15 and the conductive area 12. Discharge current generated between each conductive film 15 and a rear plate 21 is caused to flow into the conductive area 12 by applying anode voltage to the conductive area 12, which suppresses influence on an electron-emitting device 23.

A strip gasket utilizing a low closure force on an enclosing face for shielding electromagnetic interference is disclosed. The strip gasket includes an outer surface and an inner surface. The inner surface provides a hollow cross section region. Bending moments are created on surface peripheries of the inner surface and the outer surface, or both, to provide a low closure force on an enclosing face. The bending moment results in an increased surface area of the strip gasket providing a low resistance. Cauchy's stress analysis reveals that a lower force is required to compress the strip gasket as compared to conventional strip gaskets.

Protection is provided against electrical surges resulting from Electrical Over Stress conditions, e.g., when interfacing circuits with powered connections. An EOS shunt is activated for as long as the EOS condition exists. EOS protection using an EOS shunt in accordance with the principles of the present invention remains activated by a voltage threshold trigger as long as necessary. In a disclosed embodiment, an EOS shunt includes a voltage threshold detector that detects a voltage on a power bus with respect to a ground rail exceeding a predetermined amount, e.g., 5 volts in a device powered at 3.3 volts. During the EOS event, a path between power and ground comprising a transistor is turned on.

An aerating biologic filter pool with dual layers of filter material for treating sewage is characterized by that two filter materials with different granularities are used, middle discharge tubes with water holes are arranged between two filter layers, and air and water are alternatively used for flushing. Its advantages are both decarbonating and nitrifying functions, high effect, simple system and low cost.

A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.

An object of the present invention provides an n-type Group III nitride semiconductor stacked layer structure of a low resistance having excellent flatness generating few cracks and pits in the uppermost surface. The inventive n-type Group III nitride semiconductor stacked layer structure comprises a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.

A gate electrode of an n-type MIS transistor includes a first metal-containing film, which is formed in contact with a gate insulation film and has a Fermi level on a conductive band side from a substantial center of a band gap of a semiconductor substrate, and a second metal-containing film formed on the first metal-containing film and having a lower resistance than the first metal-containing film. A gate electrode of a p-type MIS transistor includes a conductive coating film, which is formed in contact with the gate insulation film and has a Fermi level on a valence band side from a substantial center of the band gap of the semiconductor substrate, and the second metal-containing film formed on the conductive coating film and having a lower resistance than the conductive coating film.

A wiring structure includes a conductive pattern on a substrate, a first insulation layer pattern between adjacent conductive patterns and a second insulation layer pattern on the first insulation layer pattern. The first insulation layer pattern is separated from the conductive pattern by a first distance to provide a first air gap. The second insulation layer pattern is spaced apart from the conductive pattern by a second distance substantially smaller than the first distance to provide a second air gap. The wiring structure may have a reduced parasitic capacitance while simplifying processes for forming the wiring structure.

A crosslinked elastomer body is composed of an electrically conductive composition comprising an electrically conductive filler and an insulative elastomer (matrix). The electrically conductive tiller is in a spherical particulate form and has an average particle diameter of 0.05 to 100 μm. The electrically conductive filler has a critical volume fraction (φc) of not less than 30 vol % as determined at a first inflection point of a percolation curve at which an insulator-conductor transition occurs with an electrical resistance steeply reduced when the electrically conductive filler is gradually added to the elastomer. A resistance observed under compressive strain or bending strain increases according to the strain over a resistance observed under no strain when the electrically conductive filler is present in a volume fraction not less than the critical volume fraction (φc) in the composition.

A metalized film capacitor includes metalized films, each of which is formed of an insulating film made of dielectric, and a vapor deposited metal electrode formed on an upper surface of the insulating film. An end of the vapor deposited metal electrode extends together with an end of the insulating film, and both the ends are connected to an electrode terminal. The vapor deposited metal electrode of the metalized film includes a center region and a low resistance section that is made of Al—Zn—Mg alloy. The low resistance section is disposed at an end of the electrode and is thicker than the center region. This metalized film capacitor has high humidity resistance.

A memory element including a first FET, and a selection switch including a second FET are connected in series, and a semiconductor film and a dielectric film stacked over a substrate form a common channel and a common gate insulating film in the first and second FETs. A first gate electrode of the first FET and a second gate electrode of the second FET are formed on the dielectric film, and a drain electrode and a source electrode are formed on the semiconductor film. Under the semiconductor film, a back-gate electrode is formed with a ferroelectric film interposed therebetween, and the ends of the semiconductor film that forms the channel are located inwardly of the ends of the back-gate electrode.

The invention discloses a fish compound traditional Chinese medicinal preparation prepared from raw materials including rhubarb, acanthopanax, radix astragali, hawthorn and liquorice according a certain weight ratio. A method for preparing fish compound traditional Chinese medicinal preparation comprises the following steps of: A. washing and drying the rhubarb, the acanthopanax, the radix astragali, the hawthorn and the liquorice in the sun; B. respectively crushing and sieving the rhubarb, the acanthopanax, the radix astragali, the hawthorn and the liquorice to ensure the granularity reaches 140-200 mu; and C. weighing up the rhubarb, the acanthopanax, the radix astragali, the hawthorn and the liquorice according to the ratio and mixing and subpackaging after uniformly mixed to obtain the fish compound traditional Chinese medicinal preparation. The method has the advantages of feasibility, convenient operation, reasonable formulation and convenient use; traditional Chinese medicines have wide sources, low price, remarkable effects and no toxic or side effects; various components mutually act; and the invention simultaneously has two properties of nutrition and medicament, not only contains nutrient substances, but also has components with antibacterial activity and other bioactivities, can improve the metabolism of cultivated fishes, promote the growth and the development, improve the immunologic function, prevent and treat diseases and the like.

The invention discloses an integrated inspection device of axis parts, which consists of a granite base, a granite air floating measuring guideway and slipway, a granite air floating bearing guideway and slipway, a head frame, a tail frame, a plurality of measuring modules and a long grating ruler. Adopting the structure can achieve the integrated measurement to the axis parts, the integrated measurement of the axial dimensions of the axis parts and a plurality of position errors can be achieved by one clamping, and the inspection device has the advantages of simple structure, easy operation, and high precision.

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer; a second nitride semiconductor layer having a greater band gap than the first nitride semiconductor layer; a source electrode and a drain electrode on the second nitride semiconductor layer apart from each other; a third nitride semiconductor layer, between the source electrode and the drain electrode, containing a p-type first impurity and serving as a gate; and a fourth nitride semiconductor layer, between the third nitride semiconductor layer and the drain electrode, containing a p-type second impurity, wherein the average carrier concentration of the fourth nitride semiconductor layer is lower than the average carrier concentration of the third nitride semiconductor layer.

The invention discloses an unmanned flying robot based on compressed air cold assistance launching, and belongs to the technical field of unmanned aerial vehicles and compressed air assistance cold launching. The unmanned flying robot uses compressed air as auxiliary power to carry out ejection take-off. After the unmanned flying robot lifts off, the power generated by a turbine jet engine is usedas the main thrust force to realize the horizontal attitude flight of the unmanned flying robot. The auxiliary electric drive is used as auxiliary power to realize the flight state change and vertical lifting and lowering of the unmanned flying robot. A load cabin inside the unmanned flying robot releases the loaded payload into the air and the ground through a folding mechanical arm, or grabs orrecovers ground objects through the folding mechanical arm. The unmanned flying robot can realize the free conversion flight of two speeds and two flight attitude, and the diversity of disaster relief tasks and the invisibility and survival rate in battlefields of unmanned flying robots are greatly improved.

On a front surface of a region where a junction termination extension structure of a semiconductor device using silicon carbide is formed, a structure having an n-type semiconductor region with a concentration relatively higher than a concentration of an n−-type drift layer is formed. An edge of the junction termination extension structure located on a side away from an active region is surrounded from its bottom surface to its front surface by an n-type semiconductor region. By this means, it is possible to provide a device with a low resistance while ensuring a withstand voltage, or by decreasing the resistance of the device, it is possible to provide a device with low power loss.

An electrode including metal oxides and a plurality of 12CaO.7Al2O3 particles, a method of preparing the electrode, an electronic device including the electrode, and, in particular, an organic light emitting device including the electrode. The electrode has low resistance, high optical transmittance, and a low work function.

A contact hole that penetrates a protective insulating film, an interlayer insulating film, and a transparent cap film and has a surface of a low-reflection film uncovered as a bottom surface is formed in a lead-out wiring region. A lower-layer terminal portion is formed by the low-reflection film and a low-resistance conductive film below the bottom surface of the contact hole. A contact hole that penetrates the protective insulating film and a transparent cap film and has a surface of a low-reflection film uncovered as a bottom surface is formed in the lead-out wiring region. An upper-layer terminal portion is formed by the low-reflection film and a low-resistance conductive film below the bottom surface of the contact hole.

Provided a method including forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained. The cycle includes: (a) forming the first film by performing a first set a predetermined number of times, wherein the first set includes supplying a first process gas and supplying a second process gas to the substrate; and (b) forming the second film by performing a second set a predetermined number of times, wherein the second set includes supplying a third process gas and supplying the fourth process gas to the substrate.

There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.