282results about How to "High optical transmittance" patented technology

A curable organopolysiloxane composition comprising: (A) an organopolysiloxane that contains in one molecule at least two alkenyl groups and at least 30 mole % of all silicon-bonded monovalent hydrocarbon groups in the form of aryl groups: (B) an organopolysiloxane that contains in one molecule at least two silicon-bonded hydrogen atoms and at least 15 mole % of all silicon-bonded organic groups in the form of aryl groups; (C) a branched-chain organopolysiloxane that contains alkenyl, aryl, and epoxy-containing organic groups; and (D) a hydrosilylation catalyst. The composition is capable of forming a cured body that has a high index of refraction and strong adhesion to substrates.

A polymer film, polymer gel, and polymer foam each contain an electrically conductive polymer and an ionic liquid and are each useful as a component of an electronic device.

A curable organopolysiloxane composition and an optical semiconductor element sealant, each comprising (A) a diorganopolysiloxane that has at least 2 alkenyl groups wherein at least 70 mole % of all the siloxane units are methylphenylsiloxane units and the total content of 1,3,5-trimethyl-1,3,5-triphenylcyclotrisiloxane and 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane is no more than 5 weight %, (B) an organopolysiloxane that has at least 2 silicon-bonded hydrogen atoms wherein at least 15 mole % of the silicon-bonded organic groups are phenyl groups, and (C) a hydrosilylation reaction catalyst. An optical semiconductor device in which an optical semiconductor element within a housing is sealed with the cured product from the aforementioned composition.

The invention discloses a two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter. The two-dimensional stratified material based SOI base micro loop filter comprises an SOI substrate which is formed by a buried oxide layer and top silicon; an SOI micro loop resonant cavity, input straight waveguide and output straight waveguide are arranged on the top silicon and the input straight waveguide and output straight waveguide are arranged on the upper side and the lower side of the SOI micro loop resonant cavity, so that the SOI waveguide structure is formed; two-dimensional stratified materials cover the SOI waveguide structure; two ends of the input straight waveguide are provided with input end optical grating and direct connection optical grating; one end of the output straight waveguide is provided with output end optical grating; areas of the SOI micro loop resonant cavity, which are close to the input straight waveguide and the output straight waveguide, form into a first coupling area and a second coupling area. Compared with the traditional technology, the two-dimensional stratified material based SOI base micro loop filter has the advantages of being narrow in 3dB band width, high in extinction ratio, less in noise, compatible with CMOS technology and widely applied to the on-chip optical interconnection network in the future due to the fact that the SOI base filter is further filtered due to the saturated absorption effect of two-dimensional stratified materials.

An active energy ray (e.g. UV rays)-curable organopolysiloxane resin composition comprises (A) 100 parts by weight of an organopolysiloxane resin containing epoxy groups and aromatic hydrocarbon groups, (B) 0.05 to 20 parts by weight of a photo acid generator, (C) 0.01 to 20 parts by weight of a photosensitizer or photo-radical generator, and (D) 0 to 5,000 parts by weight of an organic solvent. An optical transmission component made of the above-mentioned composition cured by irradiation with active energy rays (for example, UV rays). A method for manufacturing an optical transmission component by irradiating the above-mentioned composition with active energy rays (for example, UV rays).

The invention belongs to the technical field of surface engineering, and particularly relates to an electrochromism film with the stable performance and a preparation method thereof. The film system structure of the film sequentially comprises a substrate, a conductive electrode, an ion storage layer, a transition layer, an electrolyte layer, a transition layer, an electrochromism layer and a transparent conductive layer from bottom to top, and the section of the film system is the transparent protective layer. According to the electrochromism film with the stable performance, the interface and the environment are blocked by depositing a protective layer on the section of the film system of the electrochromism film, the electrochromism film has the stable color change performance in the ground environment and the space environment, performance degradation cannot happen, and the good circular stability and environment stability are achieved. According to the electrochromism film, the transition layer is additionally arranged between the coloring layer and the electrolyte layer, on one hand, leakage current is lowered when the transition layer is adopted as an electron barrier layer,and the coloring memory effect is improved; on the other hand, the voltage value needed by electrochromism is lowered, and the circular stability is improved.

This invention provides environmentally friendly heavy lanthanum flint optical glass with high refractive index and medium optical dispersion. The optical glass is composed of: SiO2 20-40 wt.%, B2O3 5-20 wt.%, TiO2 5-20 wt.%, Nb2O5 5-20 wt.%, ZrO2 0-3 wt.%, Sb2O3 0-0.5 wt.%, La2O3 10-30 wt.%, K2O + Na2O 0-5 wt.%, and BaO + CaO + SrO 12-40 wt.%. The optical glass does not contain pollutive components such as PbO, As2O3 or GdO2. Its Nd is 1.74-1.83, and Nf-Nc is 32-47. This invention adopts one-step material melting in a tank furnace to produce the optical glass, and has such advantages as simple process, short production time.

The invention belongs to the field of conductive ink and discloses transparent conductive ink and a preparation method thereof. The transparent conductive ink is prepared from, by weight, 0.5-50 parts of nano silver wire dispersion liquid, 15-35 parts of poly(3,4-ethylenedioxy thiophene)-poly(styrene sulfonic acid), 5-40 parts of an organic solvent, 5-40 parts of deionized water, 1-8 parts of dimethyl sulfoxide, 0.1-5 parts of a viscosity modifier, 0.01-1 part of a pH regulator, 0.01-2 parts of a surfactant, 0.01-1 part of a leveling agent and 0.1-0.5 part of an adhesion promoter. The solid content of the transparent conductive ink is no more than 2%; due to addition of dimethyl sulfoxide in a formulation of the conductive ink, conductivity of a PEDOT/PSS and nano silver wire combined system is effectively improved; a prepared transparent conductive film has advantages of high optical transmittance, low haze and low surface square resistance and is excellent in adhesion, conductivity and environmental stability.

The invention discloses a transparent conducting film and a writing-resistance high-penetrability resistance-type touching control panel using the same. The transparent conducting film comprises a first substrate material, a first hardening treatment layer which is arranged on the first substrate material, a colloid which is used for bonding one side of an unhardened layer of the first substrate material and a second substrate material, a first dielectric layer which is arranged on the other side of the second substrate material and has an optical refractive index of n1, a second dielectric layer which is arranged under the first dielectric layer and has an optical refractive index of n2, and a first conducting layer which is arranged under the second dielectric layer and has a refractive index of n3, wherein the refractive indexes of the film layer materials satisfy the equation that n3 is more than n2 and less than or equal to n1 as well as a film stack structure of substrate-high refractive index-low refractive index-high refractive index; and the film layer materials can form an antireflection film layer to improve the optical permeability of the transparent conducting film in a range of visible light. The transparent conducting film adopting a multilayer structure allows the conducting layer in the transparent conducting film to increase the allowable external stress bearing capacity effectively and improves the structural strength and writing resistance of the touching control panel.

The present invention relates to a double-layer YAG:Ce/(Gd,Y)AG:Ce composite transparent ceramic phosphor for white light LED packaging, and a preparation method thereof. The composite transparent ceramic phosphor comprises two laminated transparent ceramic layers, wherein the chemical composition of the first transparent ceramic layer is (CexY1-x)3Al5O12, x is more than or equal to 0.0005 and is less than or equal to 0.05, the chemical composition of the second transparent ceramic layer is (CeyGdzY1-y-z)3Al5O12, y is more than or equal to 0.0005 and is less than or equal to 0.05, and z is more than or equal to 0.25 and is less than or equal to 0.75. According to the present invention, under the excitation of the blue light emitted by the LED chip and having the wavelength of about 465 nm, the cerium-yttrium-aluminum-doped garnet (YAG:Ce) transparent ceramic can emit the wide spectrum yellow light with the peak value of 530 nm, and the cerium-gadolinium-yttrium-aluminum-doped garnet ((Gd,Y)AG:Ce) transparent ceramic can emit the red yellow light with the wavelength of close to 580 nm, such that the white light spectrum with the sufficient red light component can be obtained through the compounding so as to effectively improve the LED luminescence color temperature while obtain the high luminous efficiency.

The invention belongs to the technical field of strain sensor production and relates to a bent flexible transparent strain sensor production method which includes that: camphorsulfonic acid is dissolved in deionized water to form a camphorsulfonic acid water solution, aniline monomers are filled into the camphorsulfonic acid water solution and then hydrogen peroxide is filled into the camphorsulfonic acid water solution to prepare polyaniline reaction liquid; a clean polyester film substrate is vertically immersed into the polyaniline reaction liquid to be soaked and then is taken out, is soaked in meta-cresol solutions and then is taken out, is rinsed through deionized water and is blown dry to obtain a polyaniline nanometer-film sample; the polyaniline nanometer-film sample is tailored to be square, is attached to a polyester film printed with electrodes and connected into a circuit and is packaged through a polydimethylsiloxane adhesive film; and a constant voltage power supply is connected with an ampere meter, and a bent flexible transparent strain sensor can be obtained. The production method is simple and reliable in principle, the produced sensor is good in transparent flexibility, unlikely to break, high in sensitivity, low in cost and environmentally friendly.

The invention discloses an Er<3+>/Yb<3+> co-doped yttrium lithium fluoride monocrystal and a preparation method thereof. The yttrium lithium fluoride monocrystal is a rare earth ion Er<3+>/Yb<3+> co-doped monocrystal; the molecular formula is LiY(1-x-y)ErxYbyF4, wherein x is greater than or equal to 0.008 and less than or equal to 0.085, and y is greater than or equal to 0.002 and less than or equal to 0.170; the segregation coefficients of Yb<3+> and Er<3+> in the yttrium lithium fluoride are about 1, and efficient intermediate infrared laser of 2.7 microns can be output; and the yttrium lithium fluoride monocrystal has high transmittance of intermediate infrared laser, has better thermal, mechanical and chemical stabilities than those of glass state materials and has the characteristics of low phonon energy, high optical transmittance of wavebands with width of 300-5500nm, less color center forming amount, low thermal lens effect and the like, thereby being more easily processed and more suitably used in laser devices. In the preparation method disclosed by the invention, a sealing crucible falling technology is used, so that the operation is simple; the raw material is fluorated at high temperature in a sealed water-free and oxygen-free environment, so that the crystal is isolated from air and water vapor during the growth; and therefore, the high-quality Er<3+>/Yb<3+> co-doped LiYF4 monocrystal containing little OH<-> ion and oxide is obtained.

The invention provides a preparation method of an aluminum-doped zinc oxide transparent conductive oxide film. The method is characterized in comprising the steps that: a reaction chamber is vacuumed and heated; high-purity nitrogen with a purity of 5N is used for washing various gas pipes and the reaction chamber; a zinc source precursor is delivered into the reaction chamber, and pulse treatment is carried out; excessive precursor is removed; steam is delivered in, and pulse treatment is carried out; excessive steam is removed by washing, and a zinc oxide deposition cycle is finished; an aluminum oxide deposition cycle with a similar process is finished; when zinc oxide and aluminum oxide circular deposition is finished, high-purity hydrogen is delivered in, and excessive hydrogen is removed, such that an aluminum-doped zinc oxide film deposition process under a hydrogen atmosphere condition is achieved; and the preparation of the aluminum-doped zinc oxide transparent conductive oxide film is finished. With the relatively low temperature, the AZO film can be deposited on low-melting-point and flexible substrates such as high-molecular polymers, and AZO film application scope is greatly expanded.

The invention discloses a radar/infrared two-waveband frequency selective surface which solves the technical problems that a latticed metal mesh FSS in the prior art cannot further improve optical transmittance, the distribution of stray light is centralized, and the application in high-precision detection and imaging observation is not facilitated, and belongs to the technical field of electromagnetic shielding. The radar/infrared two-waveband FSS is a cross-hole-shaped periodic array on a metal mesh, the metal mesh is a round-hole-shaped metal mesh or a hexagonal metal mesh, the periods of cross hole shapes are the integer multiples of the period of the metal mesh, and each cross hole shape meets the two following constraint conditions that the slit width of the cross hole shapes is the integer multiples of the period of the metal mesh minus the wire width of the metal mesh; the difference between the slit length of the cross hole shapes and the slit width of the cross hole shapes is the even times of the period of the metal mesh. The radar/infrared two-waveband FSS is higher in optical transmittance, more even in diffraction light distribution and capable of effectively restraining the stray light.

The invention relates to the technical field of organic chemistry and particularly relates to a diamine monomer, a preparation method therefor, polyimide and a preparation method therefor. According to the diamine monomer provided by the invention, the diamine monomer provided by the invention contains a spiro center (two rings share one atom) and has a non-coplanar structure, the rigidity of molecular chains is improved, and thus, the condition that continuous micropores are formed inside polyimide, holes are many, and the molecular structure is loose is caused due to the fact that macromolecular principal chains in the polyimide prepared from the diamine monomer provided by the invention cannot rotate freely and effective accumulation among the molecular chains is inhibited, so that thegas permeability, solubility and the like of a polyimide film prepared from the diamine monomer provided by the invention can be improved on the premise that selectivity is kept; and furthermore, thepolyimide prepared from the diamine monomer provided by the invention has relatively good solubility and light transmittance.

The invention discloses a method for preparing an SnO2:F transparent conductive film by a bias radio-frequency magnetron sputtering method, belonging to the technical field of electronic materials. The method comprises the following steps: fully mixing SnO2 powder with purity of 99.99% and SnF2 powder with purity of 99% according to a weight ratio of 95:5-85:15, after press forming, sintering themixture in air at a temperature of 190-210 DEG C to prepare an SnO2:F target; sending the target and a washed organic flexible base material into a radio-frequency magnetron sputtering instrument andpreparing the SnO2:F transparent conductive film on the substrate of the organic flexible base material by the bias radio-frequency magnetron sputtering technology at room temperature. The target is 40-80mm away from the substrate in the sputtering instrument; the basic vacuum degree of a sputtering chamber is less than 1.0*10<-3>Pa; the pressure of sputtering gas-argon is 0.3-5Pa; the sputteringbias ranges from minus 100V to 0V and the sputtering power is 50-200W. The invention has the advantages that the substrate dispenses with heating, the preparation process is simple, the cost is low, and the photoelectric performance and the stability are good.

The invention relates to the field of transparent functional ceramic materials, and in particular relates to lanthanum-doped lead zirconate titanate electro-optic scattering transparent ceramic and a preparation method thereof. A general formula of the lanthanum-doped lead zirconate titanate electro-optic scattering transparent ceramic is represented as Pb1-xLax(ZryTi1-y)1-x/4O3 (PLZT), wherein x is no more than 0.100 and no less than 0.040, and y is no more than 0.75 and more than 0.65. The preparation method adopts an aerating-hot pressing sintering processing, wherein oxygen flow in the entire sintering process is 3-5L/min, sintering temperature is 1200-1280 DEG C, heat preservation duration is 8-24 hours and pressure is 20-60Mpa. The lanthanum-doped lead zirconate titanate electro-optic scattering transparent ceramic has a unique perovskite-phase structure, which is uniform in microstructure and free from a defect of micropores. And the electro-optic scattering transparent ceramic is applicable to photoswitches, optical attenuators, opto-isolators and other optical modulator aspects.

The invention belongs to the fields of nano materials and optoelectronic devices and particularly relates to an indium-free transparent electrode. According to the indium-free transparent electrode, a magnetron sputtering coating machine serves as a film growth means; a buffer seed layer initially grows on a substrate; an ultrathin high-conductivity metal film serves as a conducting layer; an antireflection layer achieves optical and electrical modulation of the transparent electrode. Meanwhile, the invention provides a preparation method of the indium-free transparent electrode. The preparation method improves the optical transmittance by means of the multilayer composite film technology, by taking the high-conductivity ultrathin metal as the conducting layer, through interface optical diffraction and reflection effects of multiple layers of films and by integrating reasonable selection of variety and thickness of materials of antireflection films, thereby achieving organic unification of light transmittance and conductivity of the films.

An electrode including metal oxides and a plurality of 12CaO.7Al₂O₃ particles, a method of preparing the electrode, an electronic device including the electrode, and, in particular, an organic light emitting device including the electrode. The electrode has low resistance, high optical transmittance, and a low work function.

The invention provides a transparent conductive film with a sandwich type structure. The transparent conductive film is characterized in that a module system of the transparent conductive film comprises zinc oxide/ copper/ zinc oxide. A zinc oxide film has the thickness of 20-400nm, and a copper film has the thickness of 2-8nm. The invention also provides a preparation method of the transparent conductive film with the sandwich type structure; and the method comprises the steps of: preparing the high-quality zinc oxide films which are respectively taken as a bottom layer film and an upper layer film by applying an atomic layer deposition or magnetron sputtering method, and preparing the copper film that is taken as an interlayer by applying a magnetron sputtering method. The copper film has the thickness within the range of 2-8nm, so that the sandwich type transparent conductive film has excellent conductivity and good optical transmittance, and has the technical parameters reaching the level of commercial application.

The present invention discloses DC magnetically controlled co-sputtering process for preparing transparent conductive ZnO:Al film in polycrystalline structure on glass substrate. The present invention has sputtering target of separated pure metal zinc target and aluminum target separated by 40-80 mm, basic vacuum lower than 1.0x10<-3> Pa in the sputtering room, sputtering gas of argon, reacted gas of oxygen, gas pressure of 0.5-3 Pa in the sputtering room, argon-to-oxygen flow rate ratio of 4-10, and substrate temperature of 100-300 deg.c. The present invention has low cost, easy target making, capacity of filming in great area, high film quality and other advantages.

The invention relates to high-performance photoelectric functional calcium borate thulium oxide crystal and growth and application thereof. The formula of the calcium borate thulium oxide crystal is TmCa4O(BO3)3; the crystal in a non-centrosymmetric structure belongs to monoclinic m-point groups and is 101.12 DEG in cell parameter beta, boils at 1460 DEG C, and shows no change at the temperature from the room temperature to the boiling point. A growth method of the crystal includes preparation of polycrystalline material and growth by the Czochralski method; the high-quality calcium borate thulium oxide crystal 20-40mm in diameter and 20-50mm in height can be made. The TmCa4O(BO3)3 crystal is larger than 80% in optical transmittance under the frequency of 808nm-1100nm and 1300nm-156-nm, has an effective piezoelectric constant of deff=1pC/N-5pC/N and effective electromechanical coupling factor of keff=10-30%, and can be used as nonlinear optical crystals, laser crystals or piezoelectric crystals.