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Preparation method of aluminum-doped zinc oxide transparent conductive oxide film

A technology of aluminum-doped zinc oxide and oxide films, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as hindering optical and electrical properties

Inactive Publication Date: 2013-03-27
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for deposition at lower temperatures, defects inside the film are unavoidable, hindering the improvement of optical and electrical properties

Method used

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  • Preparation method of aluminum-doped zinc oxide transparent conductive oxide film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Use a vacuum pump to evacuate the reaction chamber to a low vacuum below 20hPa and heat it to a specific reaction temperature, and then clean the reaction chamber with high-purity nitrogen with a purity of 5N. Clean the substrate ultrasonically in high-purity deionized water for 10-30 minutes, dry it with a high-purity nitrogen gun, and put it into the reaction chamber until the temperature of the reaction chamber reaches 150°C. The precursor diethylzinc is passed into the reaction chamber with a pulse time of 0.1s, and the pulse time for cleaning diethylzinc is 3s; then a 0.2s water vapor pulse is introduced, and the excess water vapor is cleaned with a 4s pulse time. So far, one cycle of deposition of the zinc oxide film is completed. After 30 such cycles, the precursor trimethylaluminum with a pulse time of 0.2s is introduced to make it chemically saturated and adsorbed on the surface of the zinc oxide layer, and then the excess aluminum precursor is cleaned with a 4...

Embodiment 2

[0021] Use a vacuum pump to evacuate the reaction chamber to a low vacuum below 20hPa and heat it to a specific reaction temperature, and then clean the reaction chamber with high-purity nitrogen with a purity of 5N. Clean the substrate ultrasonically in high-purity deionized water for 10-30 minutes, dry it with a high-purity nitrogen gun, and put it into the reaction chamber until the temperature of the reaction chamber reaches 150°C. The precursor diethylzinc is passed into the reaction chamber with a pulse time of 0.1s, and the pulse time for cleaning diethylzinc is 3s; then a 0.2s water vapor pulse is introduced, and the excess water vapor is cleaned with a 4s pulse time. So far, one cycle of deposition of the zinc oxide film is completed. After 30 such cycles, the precursor trimethylaluminum with a pulse time of 0.2s is introduced to make it chemically saturated and adsorbed on the surface of the zinc oxide layer, and then the excess aluminum precursor is cleaned with a 4...

Embodiment 3

[0023] Use a vacuum pump to evacuate the reaction chamber to a low vacuum below 20hPa and heat it to a specific reaction temperature, and then clean the reaction chamber with high-purity nitrogen with a purity of 5N. Clean the substrate ultrasonically in high-purity deionized water for 10-30 minutes, dry it with a high-purity nitrogen gun, and put it into the reaction chamber until the temperature of the reaction chamber reaches 150°C. The precursor diethylzinc is passed into the reaction chamber with a pulse time of 0.1s, and the pulse time for cleaning diethylzinc is 3s; then a 0.2s water vapor pulse is introduced, and the excess water vapor is cleaned with a 4s pulse time. So far, one cycle of deposition of the zinc oxide film is completed. After 30 such cycles, the precursor trimethylaluminum with a pulse time of 0.2s is introduced to make it chemically saturated and adsorbed on the surface of the zinc oxide layer, and then the excess aluminum precursor is cleaned with a 4...

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Abstract

The invention provides a preparation method of an aluminum-doped zinc oxide transparent conductive oxide film. The method is characterized in comprising the steps that: a reaction chamber is vacuumed and heated; high-purity nitrogen with a purity of 5N is used for washing various gas pipes and the reaction chamber; a zinc source precursor is delivered into the reaction chamber, and pulse treatment is carried out; excessive precursor is removed; steam is delivered in, and pulse treatment is carried out; excessive steam is removed by washing, and a zinc oxide deposition cycle is finished; an aluminum oxide deposition cycle with a similar process is finished; when zinc oxide and aluminum oxide circular deposition is finished, high-purity hydrogen is delivered in, and excessive hydrogen is removed, such that an aluminum-doped zinc oxide film deposition process under a hydrogen atmosphere condition is achieved; and the preparation of the aluminum-doped zinc oxide transparent conductive oxide film is finished. With the relatively low temperature, the AZO film can be deposited on low-melting-point and flexible substrates such as high-molecular polymers, and AZO film application scope is greatly expanded.

Description

technical field [0001] The invention relates to a method for preparing a conductive oxide film, in particular to a method for preparing an aluminum-doped zinc oxide transparent conductive oxide film. Background technique [0002] Aluminum-doped zinc oxide (AZO) film is a transparent conductive oxide (TCO) material with good optical transparency and electrical conductivity, which can be used as electrode material in optoelectronic devices, including photovoltaic cells, flat panel displays and organic light emitting Diodes etc. The currently widely used TCO material is indium tin oxide (ITO), but the reserves of indium element on the earth are relatively scarce and the cost of use is high, while AZO thin film raw materials are abundant, cheap, and non-toxic, which makes it the most potential for development. TCO materials. AZO can be prepared by a variety of methods, among which the atomic layer deposition (ALD) method has its unique advantages. ALD technology can deposit A...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/44
Inventor 姜来新毛启明宋佳尹桂林何丹农
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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