Process of preparing graphene

A graphene and process technology, applied in the field of graphene preparation, can solve problems such as high reaction temperature, multiple carbon sources, and limited applications, and achieve high optical transmittance, high specific surface area, and reduce production costs.

Inactive Publication Date: 2016-05-18
PINGDU HUADONG GRAPHITE PROCESSING FACTORY
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AI Technical Summary

Problems solved by technology

At present, although the research on graphene has made great progress in theory and experiment, however, there are still many problems to be further explored and studied, both in the preparation of graphene and in the application of graphene. For example: how to reduce the cost of graphene preparation, what is the growth mechanism of graphene, how to modulate the structure of graphene, whether the performance of graphene-based composite materials can be further developed or improved, etc.
Among the many methods for preparing graphene, the chemical vapor deposition (CVD) method is one of the most effective methods for preparing large-area, high-quality graphene. However, this method requires extremely high reaction temperature and more carbon sources. , limiting its application in industrial

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Embodiment Construction

[0008] A process for preparing graphene, which is characterized by: using a radio frequency plasma enhanced chemical vapor deposition method, using a polycrystalline cobalt film prepared by a magnetron sputtering coating system as a substrate, and at a lower substrate temperature (800°C), relatively The low total gas flow rate (78sccm) and short deposition time (40s) have successfully prepared high-quality graphene with 1-5 carbon atom layers.

[0009] Preparation of polycrystalline cobalt film: Using JGP-450A multi-target magnetron sputtering coating equipment, a cobalt film with a thickness of 450nm is deposited on a single crystal Si(100) substrate. The sputtering target used is 6cm in diameter High purity cobalt (99.95%). Before putting the Si(100) substrate into the vacuum chamber, ultrasonically clean it with acetone, alcohol and deionized water for 15 minutes to remove the stains on the surface of the silicon wafer. When the background pressure of the vacuum chamber reache...

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Abstract

The invention provides a process of preparing graphene. According to the technical scheme, a radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) method is employed, wherein a polycrystal cobalt thin film prepared from a magnetron sputtering sputter coating system is employed as a substrate. At a low substrate temperature (800 DEG C) and low gas total flow quantity (78 sccm) and for a short deposition time (40 s), graphene having 1-5 carbon atom layers and being high quality is prepared successfully. The RF-PECVD allows the graphene to be prepared at low reaction temperature, for short deposition time and with less carbon resource, thereby greatly reducing the production cost of graphene and laying a foundation of promoting industrial application of the graphene. The graphene has high specific surface area, high optical transparency, high electric conductivity and high flexibility, so that the graphene has wide application value in the fields of electronic devices and optical devices.

Description

Technical field [0001] The invention provides a process for preparing graphene. Background technique [0002] Carbon nanomaterials, from amorphous amorphous carbon to crystalline natural graphite, from zero-dimensional fullerene (C 60 ) To one-dimensional carbon nanotubes (CNTs) have always been favored by the majority of scientific researchers. These carbon materials have brought endless new scientific ideas to scientific researchers. The emergence of two-dimensional graphene (Graphene) has not only enriched the family of carbon materials, but also because of its special structure and excellent properties, it has gradually surpassed other carbon family members and has become more researchable. Significance and application value of carbon material graphene is composed of a single layer of sp 2 The two-dimensional honeycomb lattice structure material composed of hybrid carbon atoms can exhibit extremely high electron mobility, excellent thermodynamic stability and good flexibility...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 李鹏
Owner PINGDU HUADONG GRAPHITE PROCESSING FACTORY
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