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Indium-free transparent electrode and preparation method thereof

A transparent electrode and conductive layer technology, applied in the field of nanomaterials and optoelectronic devices, can solve the problems of high price, rare earth element indium, and poor mechanical flexibility

Active Publication Date: 2015-05-13
QINGDAO HUAGAO GRAPHENE CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In order to solve the shortcomings of existing ITO transparent electrodes containing rare earth element indium, expensive and poor mechanical flexibility, the present invention provides an indium-free transparent electrode

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] An indium-free transparent electrode, using a magnetron sputtering coater as a film growth method, through the initial growth of a buffer seed layer on a substrate, using an ultra-thin high-conductivity metal film as a conductive layer, through the design of an anti-reflection and anti-reflection layer To achieve the optical and electrical modulation of the transparent electrode.

[0036] The specific preparation method is as follows: 1) A square glass substrate with a side length of one inch and a thickness of 1 mm is ultrasonically cleaned in acetone and ethanol for 10 minutes respectively, and after being dried with nitrogen, it is immediately placed in a magnetron sputtering loading chamber , start vacuuming.

[0037] 2) Wait for the vacuum degree of the back of the reaction chamber to be better than 5×10 -5 Torr, load the sample into the reaction chamber cavity and rotate the sample holder. The sintered titanium oxide sheet is used as the target material, and Ar ...

Embodiment 2

[0043] An indium-free transparent electrode, using a magnetron sputtering coater as a film growth method, through the initial growth of a buffer seed layer on a substrate, using an ultra-thin high-conductivity metal film as a conductive layer, through the design of an anti-reflection and anti-reflection layer To achieve the optical and electrical modulation of the transparent electrode.

[0044] The specific preparation method is as follows: 1) A square glass substrate with a side length of one inch and a thickness of 1 mm is ultrasonically cleaned in ethanol for 15 minutes, and after drying with nitrogen, it is immediately placed in a magnetron sputtering loading chamber, and vacuumization is started. .

[0045] 2) Wait for the vacuum degree of the back of the reaction chamber to be better than 5×10 -5 Torr, load the sample into the reaction chamber cavity and rotate the sample holder. The sintered silicon oxide wafer is used as the target material, and Ar with a purity hig...

Embodiment 3

[0051] An indium-free transparent electrode, using a magnetron sputtering coater as a film growth method, through the initial growth of a buffer seed layer on the substrate, using an ultra-thin high-conductivity metal film as a conductive layer, through the design of an anti-reflection and anti-reflection layer To achieve the optical and electrical modulation of the transparent electrode.

[0052] The specific preparation method is as follows: 1) A square glass substrate with a side length of one inch and a thickness of 1 mm is ultrasonically cleaned in acetone for 15 minutes, and after being blown dry with nitrogen, it is immediately placed in a magnetron sputtering loading chamber, and vacuumization is started. .

[0053] 2) Wait for the vacuum degree of the back of the reaction chamber to be better than 5×10 -5 Torr, load the sample into the reaction chamber cavity and rotate the sample holder. The sintered zinc oxide sheet is used as the target material, and Ar with a pu...

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Abstract

The invention belongs to the fields of nano materials and optoelectronic devices and particularly relates to an indium-free transparent electrode. According to the indium-free transparent electrode, a magnetron sputtering coating machine serves as a film growth means; a buffer seed layer initially grows on a substrate; an ultrathin high-conductivity metal film serves as a conducting layer; an antireflection layer achieves optical and electrical modulation of the transparent electrode. Meanwhile, the invention provides a preparation method of the indium-free transparent electrode. The preparation method improves the optical transmittance by means of the multilayer composite film technology, by taking the high-conductivity ultrathin metal as the conducting layer, through interface optical diffraction and reflection effects of multiple layers of films and by integrating reasonable selection of variety and thickness of materials of antireflection films, thereby achieving organic unification of light transmittance and conductivity of the films.

Description

technical field [0001] The invention belongs to the field of nanometer materials and optoelectronic devices, in particular, the invention relates to an indium-free transparent electrode and a preparation method thereof. Background technique [0002] The transparent conductive material refers to a thin film material with high light transmittance and low resistivity for visible light (wavelength λ=380-780nm). At present, it is widely used in solar cells, screen displays, touch screens, photodetectors, window coatings, low-wavelength lasers, high-density storage, optical fiber communications and other fields. Current research and applications are mainly focused on indium tin oxide (Indium Tin Oxide: ITO) thin films [Thin Solid Films 516 (2008) 5822]. Because ITO film has the characteristics of high transmittance in the visible light region, strong infrared light reflection, low resistivity, strong adhesion to glass, good wear resistance and chemical stability, it has formed a ...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B13/00C23C14/35C23C14/08
Inventor 刘敬权潘东晓钱锋
Owner QINGDAO HUAGAO GRAPHENE CORP LTD
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