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Sandwich type transparent conductive film and preparation method thereof

A transparent conductive film, sandwich-type technology, applied in chemical instruments and methods, ion implantation plating, gaseous chemical plating, etc., can solve problems such as reducing device performance, and achieve improved device stability The effect of transmittance

Inactive Publication Date: 2013-06-26
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The existing technology proposes that the asymmetric structure of ZnO / Ag has good optical and electrical properties, but this structure has a defect that metal ions are easy to diffuse to other parts of the device, which will reduce the performance of the device for a long time

Method used

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  • Sandwich type transparent conductive film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0028] The reaction chamber is evacuated to a low vacuum below 20 hPa with a vacuum pump and heated to 200° C., and then the reaction chamber is cleaned with high-purity nitrogen with a purity of 5N. Put the cleaned quartz glass substrate into the reaction chamber. The diethylzinc precursor is pulsed into the reaction chamber with high-purity nitrogen gas for 0.1s, chemically adsorbed onto the substrate, and then pulsed with pure nitrogen gas for 3s to clean the substrate physically adsorbed and excess in the reaction chamber. Diethyl zinc precursor; then a 0.2s water vapor pulse is introduced to react surface chemically with the previously chemisorbed diethyl zinc, and then a 4s high-purity nitrogen pulse is used to clean off excess water vapor. 500 cycles are completed in this way, and the thickness of the obtained zinc oxide film is about 100 nm. Put the quartz glass substrate deposited with the zinc oxide film into the sputtering reaction chamber, pump the vacuum to above...

Embodiment 2

[0030] The reaction chamber is evacuated to a low vacuum below 20 hPa with a vacuum pump and heated to 200° C., and then the reaction chamber is cleaned with high-purity nitrogen with a purity of 5N. Put the cleaned quartz glass substrate into the reaction chamber. The diethylzinc precursor is pulsed into the reaction chamber with high-purity nitrogen gas for 0.1s, chemically adsorbed onto the substrate, and then pulsed with pure nitrogen gas for 3s to clean the substrate physically adsorbed and excess in the reaction chamber. Diethyl zinc precursor; then a 0.2s water vapor pulse is introduced to react surface chemically with the previously chemisorbed diethyl zinc, and then a 4s high-purity nitrogen pulse is used to clean off excess water vapor. 500 cycles are completed in this way, and the thickness of the obtained zinc oxide film is about 100 nm. Put the quartz glass substrate deposited with the zinc oxide film into the sputtering reaction chamber, pump the vacuum to above...

Embodiment 3

[0032]The reaction chamber is evacuated to a low vacuum below 20 hPa with a vacuum pump and heated to 200° C., and then the reaction chamber is cleaned with high-purity nitrogen with a purity of 5N. Put the cleaned quartz glass substrate into the reaction chamber. The diethylzinc precursor is pulsed into the reaction chamber with high-purity nitrogen gas for 0.1s, chemically adsorbed onto the substrate, and then pulsed with pure nitrogen gas for 3s to clean the substrate physically adsorbed and excess in the reaction chamber. Diethyl zinc precursor; then a 0.2s water vapor pulse is introduced to react surface chemically with the previously chemisorbed diethyl zinc, and then a 4s high-purity nitrogen pulse is used to clean off excess water vapor. 500 cycles are completed in this way, and the thickness of the obtained zinc oxide film is about 100 nm. Put the quartz glass substrate deposited with the zinc oxide film into the sputtering reaction chamber, pump the vacuum to above ...

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Abstract

The invention provides a transparent conductive film with a sandwich type structure. The transparent conductive film is characterized in that a module system of the transparent conductive film comprises zinc oxide / copper / zinc oxide. A zinc oxide film has the thickness of 20-400nm, and a copper film has the thickness of 2-8nm. The invention also provides a preparation method of the transparent conductive film with the sandwich type structure; and the method comprises the steps of: preparing the high-quality zinc oxide films which are respectively taken as a bottom layer film and an upper layer film by applying an atomic layer deposition or magnetron sputtering method, and preparing the copper film that is taken as an interlayer by applying a magnetron sputtering method. The copper film has the thickness within the range of 2-8nm, so that the sandwich type transparent conductive film has excellent conductivity and good optical transmittance, and has the technical parameters reaching the level of commercial application.

Description

technical field [0001] The invention relates to a conductive film and a preparation method, in particular to a sandwich type transparent conductive film and a preparation method. Background technique [0002] Transparent conducting oxides (TCOs) materials have good electrical and optical properties, and are widely used in optoelectronic fields such as flat panel displays, solar cells, and electromagnetic shielding materials. Indium tin oxide (ITO) is currently a widely commercial TCOs material. However, since indium is a scarce resource on the earth, the cost of ITO use is high, so it is urgent to find its substitutes. Metal ion-doped zinc oxide films are considered to have high electrical conductivity and good optical transmittance in the visible light region; in addition, zinc oxide materials are easy to obtain in large quantities, are non-toxic and low-cost, and have good Therefore, metal ion doped ZnO has a bright prospect as TCOs material. [0003] Dielectric-metal-di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/04B32B15/20B32B9/04C23C14/35C23C14/08C23C16/40C23C16/44C23C14/18C23C28/00
Inventor 姜来新毛启明尹桂林李文英何丹农
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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