Method of depositing barrier layer from metal gates

Abstract

A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.

Description

REFERENCE TO RELATED APPLICATIONS [0001] The present application is a divisional of U.S. application No. 10 / 430,811, filed May 5, 2003 and claims priority under 35 U.S.C. § 119(e) to U.S. provisional application No. 60 / 430,960 filed Dec. 3, 2002. The present application is also related to U.S. application No. 10 / 430,703, filed May 5, 2003, the disclosure of which is incorporated herein by reference.FIELD OF THE INVENTION [0002] This invention relates generally to the field of semiconductor manufacturing and in particular to the field of forming transistor gate stacks in integrated circuits. BACKGROUND OF THE INVENTION [0003] Semiconductor devices are continuously improved to enhance device performance. For example, both smaller device size and higher speed of operation are highly desirable performance targets. Transistors also have been continuously reduced in size. The ability to construct smaller gate structures for complementary metal oxide semiconductor (CMOS) transistors makes ...

AI Technical Summary

Benefits of technology

[0011] It is an object of the present invention to provide an improved method of manufacturing a high performance MOS device and in particular, high performance transistor gate stacks.

[0014] The method of the present invention facilitates the use of hydrogen plasma, high energy hydrogen radials and ions, other reactive radicals, reactive oxygen and oxygen-containing reactants in the processing steps subsequent to the deposition of the gate dielectric layer of the device. Such reactants can be advantageous for patterning gate electrodes or for tailoring work function of gate electrodes, particularly for CMOS circuits.

[0015] The barrier layer provides several functions and is preferably highly conductive. The barrier layer prevents diffusion of impurities from the gate electrode into the gate dielectric layer. Furthermore, the barrier layer serves to prevent the material underneath the barrier film reacting with the surroundings. For example, it prevents further oxidation of an underlying oxide during subsequent processing and thus prevents a resulting increase in equivalent oxide thickness (EOT). Many of the processes for formation of the gate electrode involve use of oxygen, which increases the thickness of an interfacial layer between the substrate and the gate dielectrics. This is a particular concern when the dielectric material is a good oxygen conductor, such as HfO2.

[0016] The barrier layer also serves to protect the dielectric layer from sputtering damage and etch damage during subsequent processing steps or any damage caused by hydrogen plasma, hydrogen radials or any other high-energy ions.

[0018] The present invention makes it possible to use oxygen as a precursor in the deposition of metal gates that determine the work function of the device in practice. The intervening barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode over the gate dielectric. It allows the elimination of polysilicon carrier depletion without affecting the work function provided by a polysilicon gate electrode. Furthermore, the barrier film formed according to the preferred embodiments prevents the electrode material from reacting with the gate dielectric material, which would change and eventually destroy the transistor. In all the aforementioned cases, the barrier layer deposited is preferably ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.

[0019] Furthermore, the properties of the interface between the gate dielectric layer and the barrier film are easily controlled in the preferred embodiments. As the thickness of the gate dielectric layer scales to 3 nm or below, the properties of the upper gate dielectric interface are significant for the performance of the device.

Problems solved by technology

However, problems arise since a depletion layer is formed at the polysilicon-dielectric interface, increasing the equivalent oxide thickness of the gate stack.

Furthermore, the gate dielectric layer is exposed to detrimental circumstances, when the process for producing the gate electrode layer comprises use of oxygen or oxygen containing precursors or when use of hydrogen plasma or other method where hydrogen radicals are involved is desired after the deposition of the gate dielectric layer.

However, thickness control in this rather complicated process sequence is difficult.

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