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489results about How to "Achieve bonding" patented technology

Miniature atomic air chamber encapsulation apparatus and technology method

The invention discloses packaging equipment for a micro atomic gas chamber and a process technology method thereof. The equipment comprises a sample chamber, a pressure bar, a sample wafer, a sample stage, a heating wire, a temperature measurement probe, a vacuum pump connector, an inflation inlet, a direct-current high-voltage power supply, a voltmeter, a resistor, and other measurement and control devices. The method comprises: step 1, the selection of materials; step 2, the processing of the materials; step 3, the washing of the sample wafer; step 4, the bonding of a first surface; step 5, the bonding of a second surface; and step 6, the detection of a sample, and is a method which closes metal rubidium generated by adopting an in-situ chemical reaction method in a micro gas chamber. The method has the advantages that the special equipment is a common high vacuum system which is based on an anode bonding technology principle and adopts a relatively cheap mechanical pump, namely molecular pump air-bleed set; at the same time, inert gas is used to take measures such as the repeated inflation to the vacuum system to clean, the high temperature baking to the local sample wafer to remove gas and so on, to lighten the influence of residual gas and adsorbed gas as far as possible, particularly lighten the oxidation of rubidium.
Owner:PEKING UNIV

Method for modifying wood by filling grafted cell walls with organic monomers and polymerization-filling cell cavities

The invention discloses a method for modifying wood by filling grafted cell walls with organic monomers and polymerization-filling cell cavities, which relates to a wood modification method. The invention solves the problem of difficulty in simultaneously enhancing mechanical properties and durability of wood in the existing wood modification method. The method comprises the following steps: 1, preparing organic acid anhydride solution; 2, soaking the wood with the organic acid anhydride solution; 3, filling grafted wood cell walls with organic acid anhydride by heating; 4, preparing the organic polymerizable monomer solution; 5, soaking the wood with the organic polymerizable monomer solution; and 6, carrying out polymerization-filling on the wood cell cavities with the monomers by heating. Since organic function micromolecules firstly enter the wood cell walls, the method realizes filling and bonding and eliminates a great deal of hydroxyl groups in the cell walls, thereby enhancing wood durability; and the wood cell cavities are soaked by the organic polymerizable monomers to initiate the polymerization and realize the filling of the cell cavities, so that the wood has higher mechanical properties and durability.
Owner:NORTHEAST FORESTRY UNIVERSITY

Method for performing low-temperature metal bonding on GaAs and Si

The invention discloses a method for performing low-temperature metal bonding on GaAs and Si. The method comprises the following steps of: cleaning a single-side polished GaAs epitaxial wafer to remove organic substances on the surface of the wafer; performing photoresist etching on the GaAs epitaxial wafer to obtain the GaAs epitaxial wafer with a narrow strip; performing evaporation on the GaAs epitaxial wafer to form a metal layer; removing a photoresist by a stripping method to obtain a metal strip with a certain thickness; cleaning a Si epitaxial wafer to remove organic substances on the surface of the wafer; treating the surface of the Si epitaxial wafer by using H2SO4 solution and RCAl solution and attaching the cleaned Si epitaxial wafer to the GaAs epitaxial wafer so as to obtain an attached wafer; oppositely arranging the attached wafer in a vacuum bonding machine for bonding and performing thermal treatment to remove vapor of a bonding interface; and thinning the bound wafer and corroding off the GaAs substrate of the bound wafer. By the method, the low-temperature metal bonding of the GaAs and the Si is realized; and the method can be extended to the bonding between two III-V groups (or materials such as Si, Ge and the like of an IV group).
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Preparation method for polymethacrylimide composite foam conductive wave-absorbing material

The invention specifically relates to a preparation method for a polymethacrylimide composite foam conductive wave-absorbing material, belonging to the field of preparation of novel materials. The preparation method comprises the following steps: weighing (meth)acrylic acid, (meth)acrylonitrile, a third monomer, a functionalized wave-absorbing agent, a dispersing agent, an anti-settling agent, aninitiator, a nucleating agent, a polymerization inhibitor, a cerium-containing foaming material and a cross-linking agent, adding the weighed substances into a reaction vessel, and performing a polymerization reaction to prepare an expandable polymethacrylimide resin particle; and then mixing the expandable polymethacrylimide resin particle with a binder, an auxiliary agent, the functionalized wave-absorbing agent and a fibrous substance, and carrying out preheating and foaming to obtain the polymethacrylimide composite foam conductive wave-absorbing material. The material of the invention hasgood wave-absorbing properties, heat resistance and mechanical properties, can be used for preparing special-shaped parts, and can avoid defects such as complicated process and wasting of materials during mechanical processing of materials for acquisition of complicated shapes.
Owner:CASHEM ADVANCED MATERIALS HI TECH CO LTD ZHEJIANG

Process equipment for roller brush

Roller brush processing equipment is used to fix brush hair made of plush cotton flannel on the surface of a core tube. The equipment comprises a frame supporting the core tube and a sizing drum and a heater corresponding to the core tube, and is characterized in that: the left end and the right end of the frame are respectively provided with a left transmission device and a right transmission device which can realize friction movement and holding of the core tube; moreover, the frame is provided with an axial movement device which can synchronously drive the core tube to move in axial direction through the left transmission device and the right transmission device as well as a rotating device which can drive the core tube to rotate. After adopting the structure, the core tube can move in axial direction when rotating; therefore, the length of the core tube which is arranged on the frame is no longer limited by the equipment, and the core can be output forwards ceaselessly, thereby realizing the goal that plush cotton flannel can be stuck to the external surface of the core tube without stop; thus, the roller brush processing equipment reduces the start and end times of the plush cotton flannel on the surface of the core tube without frequently replacing the core tube, thereby having the characteristics of simple manufacture process, high operation efficiency and low operation difficulty; moreover, the equipment ensures that a processed roller brush has low production cost and has stronger market competitive power.
Owner:何朝良

Low-temperature bonding method for semiconductor without oxide layer

InactiveCN108573878AAchieve bondingSolve the problem of introducing a hydrophilic oxide layerSemiconductor/solid-state device manufacturingInterfacial oxideBond interface
The invention relates to a low-temperature bonding method for a semiconductor without an oxide layer, which relates to a semiconductor bonding process. A transition layer technology is adopted, a thinGe layer is introduced at a Si, Ge and SiO2 semiconductor bonding interface, and the low-temperature crystallization characteristics and the crystallization atomic migration characteristics of the Gematerial are used to realize non-oxide layer Si wafer bonding, Ge / Si bonding and GOI bonding. The low-temperature crystallization characteristics of a magnetron sputtering Ge layer are used to realize a non-interfacial oxide layer semiconductor bonding interface, a semiconductor Ge transition layer grows on the surface of a wafer after being cleaned, the low-temperature crystallization characteristics of the Ge are used, crystallization of the Ge transition layer is realized through low-temperature annealing, migration of atoms at the bonding interface is thus driven, and the oxide layer is finally dissociated. According to the method in the invention, the problem of introducing a hydrophilic oxide layer at the interface during a direct hydrophilic bonding process can be solved, crystallization of the semiconductor bonding interface transition layer can also be realized under the low temperature of 300 to 400 DEG C, and atomic bond bonding is thus realized.
Owner:XIAMEN UNIV

Bonding device of direction-finder

The invention relates to a bonding device used for an X-ray direction-finder which is used to measure the crystal orientation deviation of crystal or the crystal orientation position of processed crystal face of crystal bar. The structure of the bonding device is as follows: four supporting feet are arranged under a base, a graphite block slideway is arranged on the base, a T-shaped block is inserted in the graphite block slideway, a graphite block is arranged on the T-shaped block, a binding slideway is arranged on a vertical plate which is fixed on the upper part of the back of the base, a flange is arranged in the mid-position of the front of the T-shaped block, one end of a screw arranged in the mid-position of the front of the T-shaped block is connected with a hand knob, and the other end is screwed in a nut board arranged in the mid-position of the front of the base to be connected with the flange. The device can be used to ensure that the crystal face and the end surface of the graphite block are perpendicular to the axis of crystal rod, the deviation angle in a retainer plate plane can be adjusted, the deviation angle in a plane which is perpendicular to the retainer plate can be adjusted, the bonding device can satisfy the binding demand of crystal rod with different diameters and the high precision slicing demand, the investment is less, the operation is easy, convenient and reliable, and the aim of binding various crystal rods can be effectively achieved.
Owner:DONGDAN AOLONG RADIATIVE INSTR GRP

Backside-illuminated image sensor wafer level packaging process and packaging structure

The invention relates to a backside-illuminated image sensor wafer-level packaging process and packaging structure. The packaging process comprises the following steps: bonding a load wafer on the front surface of a CIS wafer, thinning the back surface of the CIS wafer with the load wafer being as a support, and preparing a light filter and a micro lens on the back surface of the thinned CIS wafer; carrying out covering on the edge position of the back surface of the CIS wafer with first bonding glue, carrying out coating with second bonding glue in an enclosed annular shape, and bonding a seal cover onto the back surfaces of the first bonding glue and the second bonding glue; thinning the load wafer with the seal cover being as a support, preparing conductive columns in the thinned load wafer, and depositing a conductive layer on the top end of each conductive column; and removing stickiness of the first bonding glue to enable the CIS wafer and the seal cover to be separated, cleaning the CIS wafer and the seal cover to remove the second bonding glue, and finally, carrying out cutting to obtain the backside-illuminated image sensor wafer-level packaging structure. The process reduces the thickness of the package wafer and can enable the seal cover to be used repeatedly.
Owner:NAT CENT FOR ADVANCED PACKAGING

Method of manufacturing bonding structure for multi-layer bonding stack and bonding structure

The invention relates, in particular, to a method of manufacturing a bonding structure for a multi-layer bonding stack and a bonding structure. The method includes the steps of depositing front bonding points at preset positions on a surface of a dielectric layer of a wafer, the wafer including a first substrate and the dielectric layer, and the dielectric layer including a plurality of metal connection points; leading out a part of the metal connection points to form metal transfer points; performing through-hole etching at the metal transfer points to form a plurality of through-holes; performing conductive metal deposition on the inside of the through-holes to fill the through-holes; and subjecting a far surface of the substrate away from the dielectric layer to thinning and chemical mechanical planarization processing until the conductive metal is exposed, and forming, by taking the conductive metal as backside bonding points, the bonding structure for the multi-layer bonding stack and with bonding points on both the front and back sides. The bonding stack of a plurality of wafers or chips can be realized by the method of the invention, the freedom of the circuit design of an integrated circuit chip and the effective utilization area of the chip can be effectively improved, and the problems such as high resistance caused by too long connection wires and bandwidth decrease are reduced.
Owner:WUHAN XINXIN SEMICON MFG CO LTD
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