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195results about How to "Does not affect electrical performance" patented technology

Lithium ion phosphate positive electrode material of nanometer core shell structure and preparation method thereof

InactiveCN102420324AShape is easy to controlControllable granularityCell electrodesPhosphateMixed materials
The invention discloses a lithium ion phosphate positive electrode material of a nanometer core shell structure. The positive electrode material is provided with an inner core active material and a conductive outer shell structure; a conductive agent is an outer shell material; the active material is of an inner core structure; and the structure formula of the inner core active material is LiFe[1-x]MxP[1-y]AyO4, wherein x is greater than or equal to 0, y is less than or equal to 0.1, M is a transition metal element, and A is silicon. Additionally, the invention also discloses a preparation method of the lithium ion phosphate positive electrode material. According to the preparation method in the invention, a porous material is adopted as a synthesis microreactor, and a lithium ion phosphate precursor is loaded and filled in holes, namely, the inner core active precursor reversely wraps a porous precursor so as to form a special nanometer core shell structure, thus the topography granularity of primary granule is controlled; and the lithium ion phosphate positive electrode material of the nanometer core shell structure is prepared by adopting a liquid phase mixed material and solid phase sintering technology. According to the invention, on the premise that the electrical performance of the positive electrode material is not influenced, a nanometer core shell structured active substance with uniform and controllable topography and granularity is synthesized; and the preparation method disclosed by the invention has lower technology, devices and control costs, which is beneficial to large-scale production.
Owner:SHANGHAI PYLON TECH CO LTD

Thermoplastic low-smoke halogen-free flame-retardant environment-friendly sheath material for power cables and preparation method thereof

The invention discloses a thermoplastic low-smoke halogen-free flame-retardant environment-friendly sheath material for power cables and a preparation method thereof. The thermoplastic low-smoke halogen-free flame-retardant environment-friendly sheath material for power cables comprises the following components in parts by weight: 60-80 parts of EVA (ethylene-vinyl acetate), 20-30 parts of HDPE (high-density polyethylene), 10-15 parts of EPDM (ethylene-propylene-diene monomer), 15-25 parts of compatiblizing agent, 100-150 parts of halogen-free flame retardant, 0.5-1 part of antioxidant 1035, 0.5-1 part of antioxidant DSTP, 1-2 parts of ethylene bis stearamide, 3-5 parts of DCP (dicumyl peroxide), 2-4 parts of zinc oxide, 1-2 parts of calcium stearate, 10-20 parts of dimethyl methyl phosphonate, 30-40 parts of nano kaolin, 2-3 parts of stearic acid and 0.5-1 part of isopropyl tri(dioctylpyrophosphate)titanate. The sheath material disclosed by the invention has the advantages of excellent physical and mechanical properties, excellent flame retardancy, favorable high/low temperature resistance, favorable oil resistance, favorable solvent resistance, favorable wear resistance, favorable ozone resistance, favorable aging resistance, high flexibility, crack resistance and the like, is very durable, environment-friendly and pollution-free, and can completely satisfy the requirements for modern power cables.
Owner:ANHUI HUAJIN CABLE GROUP

Anti-discoloring protective agent for silver plating and preparation method as well as application method thereof

InactiveCN102162095ADoes not affect appearance and conductivityLong vulcanization test timeMetallic material coating processesCorrosion inhibitorProtective Agents
The invention discloses an anti-discoloring protective agent for silver plating and a preparation method as well as application method thereof. The anti-discoloring protective agent for silver plating comprises the following components in parts by weight: 5-20 parts of film forming matter, 1-5 parts of auxiliary film forming matter, 3-12 parts of organic inhibitor and 55-90 parts of dispersing agent. The preparation method of the anti-discoloring protective agent comprises the following steps of: putting the film forming matter, the auxiliary film forming matter and the organic inhibitor into the dispersing agent, stirring for fully dissolving, and uniformly mixing. The application method of the anti-discoloring protective agent comprises the following steps of: dissolving the anti-discoloring protective agent for silver plating in water, wherein the dosage is 50ml/L; keeping the temperature at 42-55 DEG C; and immersing a silver plating workpiece into the anti-discoloring protective agent for 1-3 minutes. The anti-discoloring protective agent for silver plating has the advantages of obvious oxidation resistance/vulcanization resistance, simple technological operation, strong wear resistance and the like, is easy in workpiece cleaning, is harmless to the environment, and basically has no influence on the electrical performance of a plating.
Owner:济南德锡科技有限公司

Self-aligned multi-patterning mask layer and formation method thereof

The invention relates to a self-aligned multi-patterning mask layer and a formation method thereof. The formation method comprises the following steps that: a semiconductor substrate is provided and a to-be-etched material layer is formed at the surface of the semiconductor substrate; a sacrificial material layer is formed at the surface of the to-be-etched material layer; etching is carried out on the sacrificial material layer to form a sacrificial layer, wherein the dimension of the portion, approaching the to-be-etched material layer, of the sacrificial layer is smaller than that of the portion, far away from the to-be-etched material layer, of the sacrificial layer; and a side wall is formed at the surface of the side wall of the sacrificial layer, wherein the portions of the two sides of the side wall are inclined towards the middle portion of the side wall from a position at the surface of the to-be-etched material layer to a position far away from the surface of the to-be-etched material layer. Because the portions of the two sides of the side wall are inclined towards the middle portion of the side wall and the profile shapes of the portions of the two sides of the side wall are identical with each other, the shapes of side walls of the to-be-etched material layer formed by etching by using the side wall as the mask subsequently are identical, so that the electrical performance of the semiconductor device that is formed subsequently is not influenced.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Conductive paste for solar battery

The invention belongs to the technical field of solar batteries and particularly discloses a conductive paste for a solar battery. The conductive paste comprises an organic carrier and solid powder dispersed in the organic carrier, wherein the solid powder comprises conductive silver powder and glass powder; the conductive silver powder is flaked silver powder; and the conductive silver powder accounts for 92 to 99 weight percent of the solid powder and accounts for 35 to 60 weight percent of the conductive paste. The conductive paste overcomes the prejudice of technicists in the field on lowsilver content and low electric performance, and higher electric performance can be achieved by reducing the silver content in the conductive paste; furthermore, the conductive paste for the solar battery has low silver content and moderate viscosity, and is favorable for screen printing, and attractive in appearance without sand holes, pinholes and the like after being sintered; compared with the common silver paste having higher silver content, the conductive paste has the advantage that the solar battery prepared from the conductive paste has high photoelectric conversion efficiency and the photoelectric conversion efficiency of a monocrystalline silicon piece is more than 17.50 percent.
Owner:BYD CO LTD

Manufacturing method of phase-changing random access memory

The invention relates to a manufacturing method of a phase-changing random access memory, comprising the following steps: providing a semiconductor substrate at least provided with a memory region, a peripheral circuit region and a plurality of polysilicon plugs connected with the memory region and the peripheral circuit region; etching the polysilicon plugs; performing ion implantation to the polysilicon plugs; filling a sacrifice electrolyte layer on a vertical diode; removing the sacrifice electrolyte layer filled on the vertical diode in the peripheral circuit region; removing the vertical diode of the peripheral circuit region; forming metallic plugs in plug holes of the peripheral circuit region; removing the sacrifice electrolyte layer in the plug holes in the memory region; and filling the phase-changing memory material in the plug holes in the memory region. Compared with the prior art, the plug hole in the memory region are filled by the sacrifice electrolyte layer, so, in the manufacturing process of the device, the metallic plugs cannot form in the plug holes in the memory region, thereby conquering the problem of short circuit. etc caused by the residual metal when removing the metallic plugs in the plug holes in the memory region.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

Real-time adjustment method of double-reflecting surface antenna shape surface based on best fitting

The invention belongs to the technical field of radar antennas, in particular to a real-time adjustment method for a double-reflecting surface antenna shape surface based on the best fitting. According to the real-time adjustment method for the double-reflecting surface antenna shape surface based on the best fitting, a laser measuring device is installed on the back surface of a secondary reflecting surface, and the surface shape of a main reflecting surface is measured from the position of the secondary reflecting surface. The pose matching of the secondary reflecting surface is realized while realizing the surface shape detection of the main reflecting surface, and the real-time adjustment method is applicable to a non-active main reflecting surface antenna and an active main reflectingsurface antenna. On the premise that it is ensured that a measuring system does not affect the antenna electrical performance, the real-time adjustment of the antennas during service can be realized,and the formative factor of antenna deformation is not required to be considered. The real-time adjustment method for the double-reflecting surface antenna shape surface based on the best fitting issuitable for gravity load, steady-state wind load, slowly-changing temperature load and processing and installation errors, and is applied to the real-time adjustment of the shape surface of the largedouble-reflecting surface antenna during service.
Owner:XIDIAN UNIV

Polyimide/polytetrafluoroethylene composite membrane for insulation of electric wire and cable and preparation method thereof

The invention discloses a polyimide / polytetrafluoroethylene composite membrane for the insulation of electric wires and cables and a preparation method thereof. The preparation method comprises the following steps of firstly preparing a surface modified molecular sieve; then preparing a polyamic acid (PAA) / molecular sieve composite solution, and preparing the polyamic acid / molecular sieve composite solution into a polyimide / molecular sieve composite membrane; then coating the prepared polytetrafluoroethylene / molecular sieve complex liquid on both surfaces of the membrane to obtain the polyimide / polytetrafluoroethylene composite membrane for the insulation of the electric wires and the cables. The polyimide / polytetrafluoroethylene composite membrane disclosed by the invention has good adhesion of polyimide and polytetrafluoroethylene and solves the problem of poor adhesion between a polytetrafluoroethylene coating and other base bodies; the polyimide / polytetrafluoroethylene composite membrane for the insulation of the electric wires and the cables, which is disclosed by the invention, has the advantages of excellent mechanical property and good insulating property, can normally work in a humid environment with electrical property which is not affected under the condition that the polytetrafluoroethylene coating is damaged and has the characteristic of low dielectric constant.
Owner:GUANGZHOU KAIHENG SPECIAL WIRE & CABLE

Efficient organic light-emitting diode and manufacturing method thereof

The invention relates to an efficient organic light-emitting diode and a manufacturing method of the efficient organic light-emitting diode. The efficient organic light-emitting diode is of a microcavity structure. The efficient organic light-emitting diode structurally comprises a substrate, a metal anode, a hole injection layer, a hole transmission layer, an electron transfer layer / light-emitting layer and an electron injection layer / metal cathode from bottom to top in sequence. The microcavity structure is formed by bimetallic electrode aluminum, by the adoption of the optical microcavity of the structure, efficient organic light-emitting devices can be manufactured both in a top light-emitting component structure and a bottom light-emitting component structure, and the luminescent spectrum can be narrowed. Or the efficient organic light-emitting diode structurally comprises the substrate, the metal cathode / electron injection layer, the electron transfer layer / light-emitting layer, the hole transmission layer, the hole injection layer and the metal anode from bottom to top in sequence. Due to the fact that the bimetallic electrode structure is adopted by the optical microcavity, the efficient organic light-emitting diode is obtained through the microcavity effect, and the characteristic of higher spectrum color purity is shown at the same time.
Owner:NANJING UNIV OF POSTS & TELECOMM

Ceramic circuit board with plated through hole and manufacturing method thereof

The invention belongs to the technical field of PCB manufacture and is to provide a ceramic circuit board with a plated through hole and a manufacturing method thereof. The ceramic circuit board comprises a ceramic substrate. The ceramic substrate is provided with at least one connection through hole through laser; then, each connection through hole is filled with metal slurry; after high-temperature solidification, the metal slurry forms metal columns, so that metallization of each connection through hole is realized; the holes do not have chemical liquid, thereby ensuring reliability of theceramic circuit board and avoiding the defect of existence of holes in the through holes in the conventional electroplating hole filling process; and by carrying out mechanical polishing on the metalcolumns protruding on upper and lower surfaces of the ceramic substrate and then, carrying out magnetron vacuum sputtering on at least one surface of the ceramic substrate to form a metal layer group,and since the metal layer group can be firmly combined with the ceramic substrate, and the magnetron vacuum sputtering technique can control the thickness well, the ceramic substrate is suitable forpreparing a fine ceramic circuit board, and the ceramic circuit board can take both fine production and high reliability into considerations.
Owner:深圳市牧泰莱电路技术有限公司

Backlight module and liquid crystal display device

The invention belongs to the field of liquid crystal display, and particularly relates to a liquid crystal display device and a backlight module. The backlight module includes a lamp strip, a light strip heat sink and a light guide plate, wherein an opto-coupling distance is arranged between the lamp strip and the light guide plate; and the backlight module further includes a controller used for controlling the opto-coupling distance, wherein a through hole is arranged in the lamp strip, the controller penetrates the through hole, the controller is arranged on the light strip heat sink, and the light strip heat sink provides the fixing force for controlling the position of the light guide plate. In the backlight module, the controller used for controlling the opto-coupling distance is not arranged on the lamp strip, but on the light strip heat sink, so that the fixing force for controlling the position of the light guide plate is not born by the lamp strip any longer, and is transferred onto the lamp strip heat sink; and the lamp strip is an aluminum extrusion profile with certain thickness and high strength, and can bear larger fixing force, therefore, the lamp strip is not influenced by external force any longer, is prevented from deformation easily, and avoids influence on electric properties.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD

Light trapping structure for thin film solar cell and manufacturing method thereof

InactiveCN103646982AStrong light trapping abilityStrong structure and surface plasmon localization enhance light trapping abilityFinal product manufacturePhotovoltaic energy generationSolar cell researchLight energy
The invention provides a light trapping structure for a thin film solar cell and a manufacturing method thereof. The light trapping structure is formed by a micro lens array (1), a micro lens array substrate (2), a reflecting film layer (4) with microhole arrays and a reflection lens (5). The positions of the microhole arrays of are in one to one correspondence with the positions of the focuses of the micro lens array (1) and are coincide with the positions of the focuses of the micro lens array (1). A cavity (6) is formed between the reflecting film layer (4) with the microhole arrays and the reflection lens (5). Sunlight is focused through the micro lens array and then is cast into the cavity through the micro lens array, multiple times of reflection are formed between the reflecting film layer with the microhole arrays and the reflection lens, and thus the light trapping of the sunlight is realized. A thin film solar cell is placed in the cavity, thus the absorption enhancement of the sunlight can be realized, and the photoelectric conversion efficiency is raised. The light trapping structure has the advantages of simple structure, high light energy utilization rate and good compatibility, and the light trapping structure can be widely used in various types of thin film solar cells and has a broad application prospect in the research aspect of the thin film solar cell.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI

Three-dimensional array of fixed multi-beam helical antenna

The invention provides a three-dimensional array of fixed multi-beam helical antenna. The three-dimensional array of fixed multi-beam helical antenna comprises helical antenna units and a frustum structure. The frustum structure comprises a top face and a plurality of lateral faces. The upper ends of the lateral faces are connected with the edge of the top face, the lateral sides of adjacent lateral faces are connected with each other, and the top face and the lateral faces are each provided with a helical antenna unit. The top face of the frustum structure is an equilateral polygon, and the lateral faces of the frustum structure are isosceles trapeziums. Each helical antenna unit is separated through a beam separating sheet, and the helical antennas in the helical antenna units are installed on a medium sheet. The helical antennas have the function of folding and unfolding, and are capable of realizing effective control over the screw pitches and the stiffness both of the helical antennas through a flexible support wire and a screw pitch fine adjustment device. By using the three-dimensional frustum structure to realize directional deflection of antenna beam, so that beams of airspace from a wide angle are covered without the need to use phase shift feed network. In addition, the beam separating sheet reduces cross coupling among the antenna units, and reduces the size of the frustum structure. The three-dimensional antenna array is all good in electricity property, cost and weight.
Owner:SHANGHAI SPACEFLIGHT INST OF TT&C & TELECOMM
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