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Die bonding material for LED encapsulation and preparation method thereof

An LED packaging and die-bonding technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as the inability to meet the heat dissipation requirements of power LEDs, the inability of thermal conductivity to meet the heat dissipation requirements, and the increase of die-bonding thermal resistance, so as to improve the lifespan, The effect of reducing thermal resistance and junction temperature

Inactive Publication Date: 2016-05-04
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional thermal conductive glue and conductive silver paste can no longer meet the heat dissipation requirements of power LEDs. Now the industry has begun to use tin-gold alloys and SnAgCu solders as die-bonding materials, but voids and gaps will appear at the interface due to flux volatilization and other factors during the brazing process. , and there is often a large interface thermal resistance between the solder and the metal pad, so that the thermal conductivity of the solder alloy as a thermal interface material cannot meet the heat dissipation requirements of the current high-power LED chip package and multi-chip integrated package
Moreover, in our research, it was found that during the service of the device, the die-bonding interface will degrade rapidly, resulting in a rapid increase in the thermal resistance of the die-bonding

Method used

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  • Die bonding material for LED encapsulation and preparation method thereof

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Effect test

Embodiment 1

[0040] The crystal-bonding material of this embodiment is prepared by the following method: 20% volume fraction of diamond particles with a particle size of 5-20 microns and 80% volume fraction of Au80Sn20 with a particle size below 20 microns are mixed to obtain a mixed powder. By weight percentage, 50% of diethylene glycol hexyl ether, 30% of in-situ hydrogenated rosin resin, 5% of phytic acid, 3% of polyamide resin, 10103% of antioxidant, and 9% of trimethylamine are mixed to obtain crystal-fixing assistant solder paste. The above mixed powder was mixed with the crystal-bonding flux paste at a weight ratio of 85:15 to obtain a crystal-bonding material.

Embodiment 2

[0042] The crystal-bonding material of this embodiment is prepared by the following method: 10% volume fraction of carbon nanotubes with a particle size of <5 microns is mixed with 90% volume fraction of Au80Sn20 with a particle size of less than 20 microns to obtain a mixed powder. According to the percentage by weight, 40% of ethylene glycol phenyl ether, 40% of acrylic resin, 6% of tartaric acid, 4% of fatty acid phthaloamide wax, 2% of antioxidant TBHQ, and 8% of diethylpropylamine are mixed to obtain a crystal-fixing flux paste. The above mixed powder was mixed with the crystal-bonding flux paste at a weight ratio of 85:15 to obtain a crystal-bonding material.

Embodiment 3

[0044] The crystal-bonding material of this embodiment is prepared by the following method: 15% volume fraction of diamond particles with a particle size below 5-20 microns is mixed with 85% volume fraction of SnAg3Cu0.5 with a particle size below 20 microns to obtain a mixed powder. According to the percentage by weight, 60% of diethylene glycol butyl ether, 20% of phenolic resin, 8% of malic acid, 2% of hydrogenated castor oil, 3% of antioxidant BHT, and 7% of diethanolamine are mixed to obtain a crystal-fixing flux. The above mixed powder was mixed with the crystal-bonding flux paste at a weight ratio of 80:20 to obtain a crystal-bonding material.

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Abstract

The invention discloses a die bonding material for LED encapsulation and a preparation method thereof. The die bonding material comprises tin-based soldering powder, high-thermal-conductivity particles and die-bonding solder paste, wherein the high-thermal-conductivity particles include one or two substances selected from diamond particles, carbon nanotubes and SiC, and the volume of the high-thermal-conductivity particles accounts for 0.1-70% of the total volume of the tin-based soldering powder and the high-thermal-conductivity particles. As the die bonding material of the invention contains the high-thermal-conductivity particles, high thermal conductivity can be achieved on the premise of meeting the bonding strength between an LED chip and a heat sink and not affecting the electrical performance, and the thermal conductivity is several times or even dozens of times that of the existing LED die bonding solder. By adopting the die bonding material of the invention, the thermal resistance of power LED devices is reduced effectively, the heat dissipation capacity of LED chips is improved, the junction temperature of LED chips is reduced, and the service life of LED devices and application products is increased.

Description

technical field [0001] The invention relates to the technical field of LED packaging, in particular to a crystal-bonding material for LED packaging and a preparation method thereof. Background technique [0002] The poor heat dissipation capability of power LED devices leads to high junction temperature of LED chips, which has seriously hindered the further popularization and application of power LEDs. Choosing a bonding material with good heat dissipation performance and improving the quality of the die-bonding interface will greatly improve the heat dissipation capability and reliability of the LED. Traditional thermal conductive glue and conductive silver paste can no longer meet the heat dissipation requirements of power LEDs. Now the industry has begun to use tin-gold alloys and SnAgCu solders as die-bonding materials, but voids and gaps will appear at the interface due to flux volatilization and other factors during the brazing process. , and there is often a large in...

Claims

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Application Information

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IPC IPC(8): H01L33/62H01L33/64
CPCH01L33/62H01L33/641H01L33/647H01L2933/0066H01L2933/0075
Inventor 刘葳张盛东
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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