127 results about "Gold alloys" patented technology

The invention relates to platinum-coated particles useful as fuel cell electrocatalysts. The particles are composed of a noble metal or metal alloy core at least partially encapsulated by an atomically thin surface layer of platinum atoms. The invention particularly relates to such particles having a palladium, palladium alloy, gold alloy, or rhenium alloy core encapsulated by an atomic monolayer of platinum. In other embodiments, the invention relates to fuel cells containing these electrocatalysts and methods for generating electrical energy therefrom.

A metal member includes: a metal base; a first plating layer of nickel and unavoidable impurities, which is formed on the metal base; a second plating layer of nickel, phosphorus and unavoidable impurities, which is formed on the first plating layer; a third plating layer of a gold alloy and unavoidable impurities, which is formed on the second plating layer; and a fourth layer formed on the third plating layer by a sealing process, wherein the first plating layer has a thickness of 0.5 to 2.5 μm and the second plating layer has a thickness of 0.05 to 0.5 μm, the sum of the thickness of the first plating layer and the thickness of the second plating layer being in the range of from 0.60 μm to 2.5 μm, and the third plating layer having a thickness of not less than 0.05 μm.

Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

The invention discloses a light irradiation preparation method and a use of an ultra-sensitive surface enhanced Raman scattering active base. The light irradiation preparation method comprises the following steps of: firstly, depositing silver nano particles on a surface of a DNA, then, taking the silver as a nucleation site to assemble the gold on the silver; and then, depositing small gold particles on a nano structure of silver-DNA by the sunlight again. The silver-nucleus gold-shell or silver-gold alloy nano DNA network structure is a good surface enhanced Raman scattering (SERS) active base obviously effective in TNT detection. The lowest detection limit can reach the prior lowest detection level, and enhancement factors can reach the order of magnitude of 1011-1012. The Light irradiation preparation method and the use of the ultra-sensitive surface enhanced Raman scattering active base provide a quick and accurate detection method for detecting explosives, such as TNT and the like.

An ignition device includes a ground electrode, center electrode, or both composed of a cobalt-based alloy including: Ni in an amount between about 20 and 24% by weight; Cr in an amount between about 20 and 24% by weight; W in an amount between about 10 and 16% by weight; and Co in an amount between about 32 and 47% by weight or alternately an iron-based alloy comprising: Cr in an amount between about 18 and 24% by weight; Al in an amount between about 4 and 7% by weight; and Fe in an amount between about 67 and 78% by weight. It is believed that the electrode alloys may also include Zr and B in an amount, by weight, of 0.005-0.5% Zr and 0.001-0.10% B. Center or ground electrodes of the invention may also include firing tips attached at a sparking end thereof. The firing tips may be formed of at least one of gold, a gold alloy, a platinum group metal or a tungsten alloy.

An object of the present invention is to provide a probe microscope that permits qualitative and quantitative evaluation on ions existing near the surface of a sample and permits to detect further simply and easily such as impurities, flaws and corrosion origins existing on the sample in high sensitivity. A probe microscope according to the present invention is provided with a test cell that holds a sample and permits to receive liquid, a probe, a counter electrode, a reference electrode, a drive mechanism that causes the probe to follow the surface of the sample as well as to scan the same, a potential control portion that controls a potential between the probe and the reference electrode and a current measuring portion that measures a current flowing between the probe and the counter electrode, and is characterized in that the material of the probe is constituted by a conductive body containing any of gold or gold alloy, carbon or carbon compound, boron, zinc, lead, tin and mercury.

The invention relates to a manufacturing method of a fine silver-gold alloy bonding line for polycrystalline serial LED. The fine silver-gold alloy bonding line comprises 35-55wt% of Au, 0.3-0.5wt% of Ce and the balance Ag. The manufacturing method comprises the following steps of 1, silver-gold alloy bonding line blank melting and continuous casting, 2, silver-gold alloy rod drawing and 3, silver-gold alloy line intermediate heat treatment. The manufacturing method solves the problems of ignited balls, ball offset and sharpening of the common silver-gold alloy bonding line, improves silver-gold alloy bonding line corrosion resistance, and solves the problem that the existing polycrystalline serial LED has a small bonding point size and produces an irregular first welding spot ball in bonding thereby causing welding spot short circuit and bonding strength reduction.

Method and apparatus for making hollow links or rings and for making chain made from hollow links by receiving seamless wire which has an inner core and an exterior surface, for example, a gold alloy surface, making a perforation in the wire so as to expose the inner core at the perforation, and forming the wire into an open or closed link such that the perforation is located on a hidden portion of the link. The inner core may then be removed from the open or closed link by dissolving it in acid, wherein the acid contacts the inner core at the perforation thus allowing the acid to dissolve the inner core. A chain may be made by coupling each link with at least one preceding link to produce the chain.

The invention discloses a method for preparing a corrosion and abrasion resisting coating through supersonic electric arc spraying. The method comprises the following steps that a matrix is subjected to surface roughening, and impurities on the surface of the matrix are removed; a surface roughness tester is used for carrying out quality inspection on a sprayed part of the matrix; an abrasion-proof material such as monel alloy or cobalt-gold alloy or nickel-tungsten alloy or a composite hard material is selected; supersonic electric arc spraying is carried out on the sprayed part of the matrix to prepare the metal coating, wherein the spraying speed ranges from 300 m/s to 400 m/s; and low surface energy matter is sprayed on the coating, drying is carried out at the temperature ranging from 800 DEG C to 1,200 DEG C, and the corrosion and abrasion resisting coating is prepared, wherein the hardness of the coating is HV397, the coating is of a layer texture structure, the void ratio of the coating ranges from 0.9% to 2.3%, and the average particle size of spraying particles is 4.32 micrometers. The obtained coating is better in bonding strength, lower in void ratio, more uniform in compactness, free of deformation of the sprayed matrix and very high in corrosion and abrasion resistance.

The invention relates to an alloy-doped gold bonding wire and a cryogenic-treatment preparation method thereof. The alloy-doped gold bonding wire formed by using high-purity gold as a main ingredient and being doped with high-purity silver and high-purity palladium, which is provided by the invention, is prepared from the following ingredients in percentages by weight: 60 to 80 percent of gold, 0.5 to 3.5 percent of palladium and the balance of silver. A bonding wire product has favorable oxidation resistance; an appearance is basically golden; the performance of the product is approximate to that of a pure-gold bonding wire; and the alloy-doped gold bonding wire is suitable for IC (Integrated Circuit) and COB (Chip On Board) encapsulation and high-end LED (Light-Emitting Diode) encapsulation. During the bonding of encapsulation, any gas shield is not needed; and in comparison with a gold bonding wire, the cost of the product is only approximately 3/5 to 4/5 of that of the gold bonding wire. In the preparation process of the product, the cryogenic treatment is carried out on a bonding wire twice; the arrangement of internal crystal textures of a material is improved; the physical properties of the material are enhanced; and the bonding properties of the alloy-doped gold bonding wire is improved. When the product is used for downstream encapsulation and wire bonding modes are BSOB (Bond Stitch On Ball) and BBOS (Bond Ball On Stitch), a wire stock and a ball are guaranteed to be eutectic.

A gold alloy bonding wire comprises, by weight, 1-1.5% of palladium, 20-24% of silver, 2-200ppm of one or a combination comprising two or more of calcium, beryllium and cerium, and the balance of gold. The invention also provides a manufacturing method of the gold alloy bonding wire. The gold alloy bonding wire can be used in IC and LED packaging, and has excellent integral wiring performances, and the excellent integral wiring performances are characterized in that the length of heated affected zone is small (can reach 53-60[mu]m), and the wiring camber is greatly reduced; the performances of ignition balls are good, a moderate quantity of symmetric cylindrical crystals are obtained after FAB ball ignition, and the roundness of deformed balls is high; and packaged products have good heat shock resistance and high reliability.

The invention relates to a acid gold alloy plating liquid and a plating method thereof, and provides a gild liquid with high sediment selectivity. The gild liquid contains auroc cyanide, Co ions, formamine and special brightener.

One aspect provides a method of attaching a feedthrough to a titanium housing of an implantable medical device. The method includes providing the housing with a flange forming a recess about an opening through the housing, the opening disposed within the recess. A feedthrough is positioned within the recess so as to form a gap between the flange and an insulator of the feedthrough. A braze preform is then positioned within the recess about the insulator, the braze preform comprising a biocompatible braze material having a melting point less than a β-transus temperature of the titanium of the housing. The preform is melted at a temperature less than the β-transus temperature of the titanium of the housing such that the melted braze material fills at least the gap, and then cooled to form a braze joint which bonds the insulator to the housing and hermetically seals the opening.

A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999 % pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.

The invention provides a CIGS/CdTe dual-junction laminated thin-film solar cell comprising a substrate, a CIGS bottom cell, a composite conductive layer and a CdTe top cell. The CIGS bottom cell consists of a cnductive electrode, a p type CIGS absorption layer and a bottom cell n type CdS buffer layer successively from bottom to top. The composite conductive layer includes a bottom cell intrinsic zinc-oxide insulating layer, a conductive connection layer and a top cell intrinsic zinc-oxide insulation layer of bottom cell successively from bottom to top. The CdTe top cell includes an N type CdS buffer layer, a p type CdTe absorbing layer and a copper gold alloy electrode successively from bottom to top. According to the invention, the narrow-band-gap bottom cell and the broad-band-gap top cell are connected by using the composite conductive layer to form a laminated cell, thereby improving the conversion efficiency of the thin-film cell. The experiment result demonstrates that the cell conversion efficiency of the CIGS/CdTe dual-junction laminated thin-film solar cell can reach 17.3%.

The invention discloses palladium-silver alloy for repairing an oral cavity. Alloy ingredients are optimized by an alloy material. Compared with the prior art, the obtained material has the advantages of good mechanical property, good corrosion resistance, low sensitization, and beautiful color and luster under the premise of not reducing the alloy property and clinical use effect; and the cost is just 1/4 to 1/3 of gold alloy.

A read head comprises an MR element, two bias field applying layers, and two conductive layers. The two bias field applying layers are adjacent to both side portions of the MR element, and apply a bias magnetic field to the MR element along the longitudinal direction. The two conductive layers feed a sense current to the MR element, each of the conductive layers being disposed to be adjacent to one of surfaces of each of the bias field applying layers and to overlap one of surfaces of the MR element. The conductive layers are each made of a gold alloy having a resistivity of less than 22 μΩ·cm and a hardness as high as or higher than the hardness of a material used for making the bias field applying layers.

The invention provides a method for manufacturing a semiconductor laser bar, which comprises the following steps of: (1) before bar decomposition, allowing a semiconductor laser epitaxial wafer and a wafer of which the double sides are metalized to form a gold-gold alloy through a bonding machine, and ensuring that the dimension of the wafer of which the double sides are metalized is the same as that of the semiconductor laser epitaxial wafer but the thickness is smaller than that of the semiconductor laser epitaxial wafer so as to guarantee that a luminous zone is positioned at a central position of a die on the rear of the alloy; (2) decomposing the alloyed semiconductor laser epitaxial wafer according to required width; (3) plating corresponding film systems on a front cavity surface and a rear cavity surface of the bar; and (4) packaging according to the conventional linear packaging process. Through the method, the luminous zone of the bar of the semiconductor laser is moved to the inside of the die, so the high-temperature P zone is prevented from directly contacting a solder, the thermal stress is reduced, luminous points of each bar form a strict line in the linear packaging process, the nonlinear bending is reduced, and a shaping process with higher requirement is realized.