Alloy-doped gold bonding wire and cryogenic-treatment preparation method thereof

A technology of alloy bonding and cryogenic treatment, which is applied in the field of doped gold alloy bonding wire and its cryogenic treatment preparation, which can solve the problems of wire oxidation, insufficient push-pull force, and solder joint slippage, and achieve smooth surface and drawing process Effect of smoothness and yield improvement

Inactive Publication Date: 2016-10-12
河北乐通金属材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problems to be solved by the present invention are: improving the oxidation resistance of the bonding wire, reducing the packaging cost of downstream customers, and overcoming existing problems such as wire oxidation, insufficient push-pull force, and solder joint slippage when the gold-plated silver alloy bonding wire is packaged. technical defects, to provide society with a doped gold alloy bonding wire

Method used

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  • Alloy-doped gold bonding wire and cryogenic-treatment preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0053] Step 1: Select gold ingots with a purity of 99.99%, silver ingots with a purity of 99.99%, and palladium flakes with a purity of 99.99%, wash them with 15.0% sodium hydroxide, rinse them with deionized water, and dry them in an oven for later use;

[0054] Step 2: Prepare gold-silver alloy ingots: put 80% gold ingots and 20% silver ingots into a high-purity graphite crucible according to the weight percentage, and place them in a vacuum alloy furnace, vacuumize for intermediate frequency induction heating, and heat to 1200°C; after the material is completely melted, fill it with high-purity argon and keep it warm for 60 minutes, then pour the liquid gold-silver alloy into a high-purity graphite tank to obtain a gold-silver alloy ingot with a width of 3 cm, a length of 20 cm, and a thickness of 1.5 cm;

[0055] Step 3: Preparation of silver-palladium alloy rods: put 72% silver and 28% palladium into a high-purity graphite crucible according to the weight percentage, and p...

Embodiment 2

[0068] Step 1: Select gold ingots with a purity of 99.99%, silver ingots with a purity of 99.99%, and palladium flakes with a purity of 99.99%, wash them with 20.0% sodium hydroxide, rinse them with deionized water, and dry them in an oven for later use;

[0069] Step 2: Prepare gold-silver alloy ingots: put 70% gold ingots and 30% silver ingots into a high-purity graphite crucible according to the weight percentage, and place them in a vacuum alloy furnace, vacuumize for intermediate frequency induction heating, and heat to 1100°C; after the material is completely melted, fill it with high-purity argon and keep it warm for 90 minutes, then pour the liquid gold-silver alloy into a high-purity graphite tank to obtain a gold-silver alloy ingot with a width of 5 cm, a length of 20 cm, and a thickness of 1.5 cm;

[0070] Step 3: Preparation of silver-palladium alloy rods: put 70% silver and 30% palladium into a high-purity graphite crucible according to the weight percentage, and p...

Embodiment 3

[0083] Step 1: Select gold ingots with a purity of 99.99%, silver ingots with a purity of 99.99%, and palladium flakes with a purity of 99.99%, wash them with 25.0% sodium hydroxide, rinse them with deionized water, and dry them in an oven for later use;

[0084]Step 2: Prepare gold-silver alloy ingots: put 60% gold ingots and 40% silver ingots into a high-purity graphite crucible according to the weight percentage, and place them in a vacuum alloy furnace, vacuumize for intermediate frequency induction heating, and heat to 1300°C; after the material is completely melted, fill it with high-purity argon and keep it warm for 30 minutes, then pour the liquid gold-silver alloy into a high-purity graphite tank to obtain a gold-silver alloy ingot with a width of 8 cm, a length of 20 cm, and a thickness of 1.5 cm;

[0085] Step 3: Prepare silver-palladium alloy rods: put 68% silver and 32% palladium into a high-purity graphite crucible according to the weight percentage, and place the...

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Abstract

The invention relates to an alloy-doped gold bonding wire and a cryogenic-treatment preparation method thereof. The alloy-doped gold bonding wire formed by using high-purity gold as a main ingredient and being doped with high-purity silver and high-purity palladium, which is provided by the invention, is prepared from the following ingredients in percentages by weight: 60 to 80 percent of gold, 0.5 to 3.5 percent of palladium and the balance of silver. A bonding wire product has favorable oxidation resistance; an appearance is basically golden; the performance of the product is approximate to that of a pure-gold bonding wire; and the alloy-doped gold bonding wire is suitable for IC (Integrated Circuit) and COB (Chip On Board) encapsulation and high-end LED (Light-Emitting Diode) encapsulation. During the bonding of encapsulation, any gas shield is not needed; and in comparison with a gold bonding wire, the cost of the product is only approximately 3/5 to 4/5 of that of the gold bonding wire. In the preparation process of the product, the cryogenic treatment is carried out on a bonding wire twice; the arrangement of internal crystal textures of a material is improved; the physical properties of the material are enhanced; and the bonding properties of the alloy-doped gold bonding wire is improved. When the product is used for downstream encapsulation and wire bonding modes are BSOB (Bond Stitch On Ball) and BBOS (Bond Ball On Stitch), a wire stock and a ball are guaranteed to be eutectic.

Description

technical field [0001] The invention relates to a metal bonding wire for microelectronic packaging, in particular to a gold-doped alloy bonding wire and a cryogenic treatment preparation method thereof. Background technique [0002] Microelectronics wire bonding is a method of using fine metal wires, using heat, pressure, and ultrasonic energy to tightly weld the metal wires and substrate pads to achieve electrical interconnection between chips and substrates and information exchange between chips. Under ideally controlled conditions, electron sharing or interdiffusion of atoms occurs between the lead and the substrate, enabling atomic-scale bonding between the two metals. [0003] At present, in high-end LED, COB and multi-pin IC integrated circuit packages, gold wires and gold-plated silver alloy wires are mostly used for bonding wires. Due to the high price of bonding gold wire, the packaging cost of downstream customers has increased. The price of gold-plated silver al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C5/02C22F1/14C22C1/03B22D11/116B22D11/041B21C37/04
CPCB21C37/047B22D11/041B22D11/116C22C1/03C22C5/02C22F1/14
Inventor 吴国防李凯王玉忠邢路剑肖超杨爱国王宇航杜中元杜津
Owner 河北乐通金属材料有限公司
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