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Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field

A low-defect, Czochralski technology, applied in crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as adding cost and process, increasing metal pollution, etc., to reduce defect density, reduce cost, and improve growth. effect of speed

Active Publication Date: 2004-09-15
ZHEJIANG UNIV
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  • Summary
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Problems solved by technology

(3) After preparing polished silicon wafers, high-temperature annealing in argon or hydrogen can remove defects near the surface. This method increases cost and process, and increases the possibility of metal contamination

Method used

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Examples

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Embodiment Construction

[0010] Phosphorus-doped polysilicon was used as raw material in the experiment, and the concentration of germanium doping was 1×10 12 -1×10 19 cm -3 , growing n-type 6-inch silicon single crystal with a target resistivity of 0.001-1000Ω.cm. The steps are as follows: put polysilicon into a quartz crucible, add 10-1000g of high-purity germanium, and raise the temperature to 1400°C under a 1000G magnetic field under the protection of argon gas. When the polysilicon melts, the germanium melts into the polysilicon melt, High-quality single crystal silicon doped with a trace amount of germanium is grown.

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Abstract

The invention discloses a method for growing low defect concentration straight silicon single crystal. The step is: the multi-crystal silicon is put into the quartz crucible, and adds in high purity germanium, the temperature are increased to 1400deg.C - 1450deg.C under the protection of 100-10000G magnetism field and protection gas, the germanium are melted into multi-crystal silicon liquid, the mixing thickness of germanium in single crystal silicon is 110 to the power 10- 110 to the power 21 1 / cu cm, the invention can control and decrease the thickness of oxygen effectively through adjusting magnetism intensity, the germanium can restrain the protogenesis micro deficiency, especially the VOID deficiency, decrease the deficiency density.

Description

technical field [0001] The invention relates to a method for growing a Czochralski silicon single crystal. Background technique [0002] In order to reduce costs, the diameter of Czochralski silicon single crystals used in VLSI is getting larger and larger, and with the improvement of technology, the characteristic line width of VLSI is gradually becoming smaller. Therefore, silicon single crystals used in VLSI The development direction of the crystal is that the diameter becomes larger, and the defect size and density become smaller. As the diameter of Czochralski silicon single crystal increases, factors such as crystal flow and other factors change greatly during crystal growth, which directly affects the properties of the main impurity oxygen and other micro-defects in silicon crystals. [0003] At present, the original defects of silicon materials used in VLSI mainly manifest as: COP (crystaloriginated particles), FPD (flow pattern defects), L...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00
Inventor 杨德仁马向阳李立本阙端麟
Owner ZHEJIANG UNIV
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