Micro germanium-doped vertical-pulling silicon single crystal

Abstract

The invention is minim germanium straight silicon single crystal, it includes phosphor, or boron, or arsenic or antimony whose thickness is 1x10 to the power 13 -1x10 to the power 21 cm to the power 3, and germanium whose thickness is 1x10 to the power 3 -1x10 to the power 20 cm to the power -3. The silicon single crystal has minium germanium, the most outer electron number of germanium is 4, the samke to silicon, so it doesn't affect the electrically performance of silicon, takes advantage of germanium and point bug effect, the primary micro-bug of silicon single crystal can be restrained, especially the cavity bug. It can enhance the quality and product rate effectively and decrease the product cost.

Description

technical field [0001] The present invention relates to Czochralski silicon single crystal. Background technique [0002] VLSI is developing in the direction of gradually decreasing characteristic line width and gradually increasing silicon wafer diameter. With the narrowing of the characteristic line width of integrated circuits, the problem of microscopic defects in silicon single crystal materials becomes more prominent, such as the void defects in silicon materials with a diameter of 200 mm, with a size of 100 to 300 nanometers, which has become fatal to 0.1 micron integrated circuits Impact. In fact, when the size of a single defect reaches one-half or one-third of the minimum feature line width, it will lead to the failure of the integrated circuit circuit. [0003] At present, the concentration of Czochralski silicon single crystal for VLSI is 1×10 13 ~1×10 21 / cm 3 Phosphorus or boron or arsenic or antimony electroactive impurities, the ...

AI Technical Summary

Problems solved by technology

3) After preparing polished silicon wafers, high-temperature annealing in argon or hydrogen to remove defects near the surface, this method increases cost and process, and increases the possibility of metal contamination