The application discloses a
laser containing a
particle number inversion structure, which comprises, from bottom to top, a substrate, a lower limiting layer, a first lower
waveguide layer, a second lower
waveguide layer, an
active layer, an upper
waveguide layer and an upper limiting layer; the first lower waveguide layer and the second lower waveguide layer form a lower waveguide layer; the upper limiting layer, the upper waveguide layer, the
active layer, the first lower waveguide layer and the second lower waveguide layer form a
particle number inversion structure; in the
particle number inversion structure, the upper waveguide layer steep Mg-doped concentration interface, the
active layer steep Si-doped concentration interface, the lower waveguide layer steep Si-doped concentration interface, the upper waveguide layer steep
Al content interface and the lower waveguide layer steep
Al content interface jointly make the
electron number of the active layer much larger than the hole number, thereby forming particle number inversion; with continuous input of an excitation source, hole
radiation recombination is greater than loss,
laser generation is accelerated, the threshold of the
laser is reduced, and laser power and efficiency are improved.