68 results about "Electron number" patented technology

The invention provides a method for determining a multi-carrier micro-discharging secondary electron number. The method comprises the following steps of: firstly, taking single-path carrier signals which have different ranges and have the minimum frequency in multi-carrier signals to be analyzed as excitation signals; calculating a secondary electron number in a microwave part to be analyzed; carrying out mathematic treatment to obtain an electron accumulating speed curve under the effect of the different excitation signals; then, taking a signal between the two adjacent zero points of a multi-carrier synthesizing signal as a calculation subinterval; equalizing multi-carrier signals in each calculation subinterval into a single-carrier signal with the minimum frequency of the multi-carrier signals with the specific range; acquiring an electron accumulating speed corresponding to an equivalent single-carrier signal range through finding out an electron accumulating speed curve; accumulating an electron number generated by the effect of the multi-carrier signals between each two adjacent zero points to obtain the electron number when each calculation subinterval is finished; and counting the corresponding result to obtain the secondary electron number in the microwave part to be analyzed when the multi-carrier synthesizing signals of the different moments act.

The invention provides an ultra-fast electronic diffraction system based on an X-waveband photocathode microwave electron gun, belonging to the technical field of ultra-fast electronic diffraction; the ultra-fast electronic diffraction system is characterized in that the X-waveband photocathode microwave electron gun replaces a DC high-voltage photocathode microwave electron gun in the existing Kev ultra-fast electronic diffraction system and is used as an electron source; and correspondingly, an X-waveband pulse microwave power unit is adopted and high-quality electron beams ranging from 0.5MeV to 1.5MeV is easily obtained, thus leading the electron number in each electron beam bunch to be improved to 2 to 3 magnitude and correspondingly saving a plurality of samples and testing time of the diffraction samples to be researched, thereby leading the obtaining of single diffraction sample spot to be possible.

The invention is minim germanium straight silicon single crystal, it includes phosphor, or boron, or arsenic or antimony whose thickness is 1x10 to the power 13 -1x10 to the power 21 cm to the power 3, and germanium whose thickness is 1x10 to the power 3 -1x10 to the power 20 cm to the power -3. The silicon single crystal has minium germanium, the most outer electron number of germanium is 4, the samke to silicon, so it doesn't affect the electrically performance of silicon, takes advantage of germanium and point bug effect, the primary micro-bug of silicon single crystal can be restrained, especially the cavity bug. It can enhance the quality and product rate effectively and decrease the product cost.

The invention relates to a hole compensation type skutterrudite thermoelectric material and a preparation method of the hole compensation type skutterudite thermoelectric material. The hole compensation type skutterudite thermoelectric material is shown in the following description: RyA(4-x)BxSb12/z NC, wherein x is equal to or greater than 0.01 and equal to or less than 0.5, y is equal to or greater than 0.01 and equal to or less than 1 and z is equal to or greater than 0% and equal to or less than 10%; R is selected from at least one of the following group of elements: Ca, Ba, La, Ce, Pr, Nd and Yb; A is selected from at least one of the following group of elements: Fe, Co and Ni; B is selected from at least one of the following group of transition metal elements: Ti, V, Cr, Mn, Fe, Nb, Mo, Tc and Ru, and electron number of the element B is less than that of the element A; and NC is in phase II, wherein z is mole% in the phase II of the thermoelectric material. The invention also provides the preparation method of the hole compensation type skutterrudite thermoelectric material.

The invention provides an infrared camera wave band comparison method based on detection efficiency. The method comprises the steps of: firstly, performing simulation on target radiation characteristics and atmospheric background radiation characteristics; secondly, performing target and background electron number calculation based on actually adopted optical system and detector parameters; thirdly, performing detection interference electron number calculation based on detector properties; fourthly, calculating detection efficiency parameters under different wave bands as reference for wave band selection. The invention provides the systematic method for wave band selection of a space-based infrared detection system shouldering specific tasks; the method closely fits engineering practice and the evaluation indexes are quantifiable, so that reference is provided for design of wave bands of a space-based infrared detection system.

An electrode plate for electrolysis is composed of a plate-form porous ceramic body for electrolyzing a hydrogen-comprising-compound solution, and a conductive portion provided at a part of the ceramic body, wherein particles for composing the ceramic body are comprised of any of fluoride carbon and an element difficult to react to oxygen, and wherein an outmost-nucleus-orbit electron number of the element is even, and porosity having an energy concentration field is provided between the particles in the ceramic body.

The invention discloses a method for determining a coaxial configuration micro-discharging threshold value. The method comprises the following steps of: determining an electronic movement locus and an electronic movement speed in a coaxial structure; converting probability of an emergence speed satisfying Maxwellian distribution into a joint probability density function of transit time; respectively carrying out maximum value and monotonicity processing to four classes of probability density functions to obtain a processed joint probability density function; taking an electron collision kinetic energy as an incidence electron energy of a secondary electron emission characteristic of a material to obtain a secondary electron multiplication function generated during electron collision under the transit time; constructing a steady-state equation which satisfies the electron number during micro discharging; judging whether a voltage generates micro discharging by solving an effective secondary electron multiplication rate in the steady-state equation; and gradually calculating an effective multiplication rate of a next voltage with a bisection method, wherein a corresponding voltage is a micro-discharging threshold value when the effective multiplication rate is 1. According to the method disclosed by the invention, an accurate micro-discharging threshold value can be obtained, and meanwhile, the threshold value can be quickly obtained.

The invention relates to a method for enhancing a plasma spectrum of fused silica induced by femtosecond laser double pulses, in particular to the method for carrying out ultrafast repetitive ablation on the fused silica by using the femtosecond laser double pulses to improve the radiation spectral intensity of a producing plasma, and belongs to the technical field of femtosecond laser application. The conventional femtosecond laser single pulse is modulated to the femtosecond laser double pulses, and the local transient electron dynamic state of the processed fused silica is regulated in the scale of subpicoseconds to hundred picoseconds to change the temperature and electron number density of the induced fused silica plasma and finally improve the spectral radiation intensity of the plasma. Furthermore, compared with the conventional femtosecond laser single pulse, the radiation spectral intensity can be enhanced by multiple times.

A method for determining number of multi-carrier microdischarge secondary electrons distributed in an inhomogeneous field includes: firstly, equally dividing a cross section of an inhomogeneous field distribution area; secondly, subjecting each subdivided area to statistics and accumulation of multi-carrier microdischarge secondary electrons to acquire the electron number of each subdivided area; thirdly, subjecting different areas to redistribution of the secondary electron number according to the diffusion property of the secondary electrons; fourthly, taking the distributed secondary electron number as an initial number to subject each area to statistics and accumulation of secondary electrons again, thereby obtaining the number of the multi-carrier microdischarge secondary electrons distributed in the inhomogeneous field.

The invention discloses high-activity nano-enzymes based on transition metal oxides and derivatives of the transition metal oxides as well as an acquisition method and application of the high-activitynano-enzymes. The acquisition method comprises the synthesis of the nano-enzymes, measurement of activities and acquisition of the corresponding relation between the activities of the transition metal oxide nano-enzymes and the electronic structures of transition metal ions in the transition metal oxides, wherein when the eg electron number of the transition metal ions is 1 or about 1, the transition metal oxide nano-enzymes are the high-activity transition metal oxide nano-enzymes; or when the eg electron number of the transition metal ions is not 1 or about 1, metal ions are doped or otherways are taken to regulate the valence states of the central ions so as to enable the eg electron number to be 1 or about 1 to obtain the high-activity transition metal oxide nano-enzymes. According to the invention, the activities of the nano-enzymes based on the transition metal oxides are quantitatively measured, and shows very good correlation with the eg electron number of the transition metal oxides, so that flexible regulation and control of the activities of various nano-enzymes is realized, and the high-activity nano-enzymes based on the transition metal oxides and the derivatives ofthe transition metal oxides are obtained.

An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.

The invention relates to an electron transport material and a preparation method and application thereof. The structure of the electron transport material comprises an inner core and a shell layer, wherein the inner core is made of metal oxide; and the conduction band bottom energy level of the material of the shell layer is smaller than the conduction band bottom energy level of the material of the inner core. The electron transport material has an electron quantum well energy level structure, the electron mobility of an electron transport layer can be effectively reduced, the number of electrons moving to a quantum dot light-emitting layer is reduced, and QLED charge balance is promoted.

The invention provides a dual-wavelength optical system. The dual-wavelength optical system comprises a detection light source assembly, a plasma flow field, a moire fringe generation assembly, a first image sensor, a second image sensor and a synchronous outer trigger. The detection light source assembly provides a first light beam and a second light beam having a first wavelength and a second wavelength respectively, wherein the first light beam and the second light beam pass through the plasma flow field and form a first moire fringe and a second moire fringe in the moire fringe generation assembly respectively; the first image sensor and the second image sensor are electrically connected with the synchronous outer trigger, and record the first moire fringe and the second moire fringe respectively; and the synchronous outer trigger receives and calculates electron number density of the plasma flow field according to the first moire fringe and the second moire fringe. The invention also provides a plasma flow field electron number density measuring method.

The invention discloses an electromagnetic wave generating device which comprises an electron generating part, an incoming part, a direction changing part and a guiding part. The electron generating part is used for generating electrons, the electrons generated by the electron generating part come in the incoming part, the direction changing part for intercepting the incoming electrons and changing the proceeding directions of the incoming electrons is arranged inside the incoming part, the guiding part is used for changing the speeds and the proceeding directions of the incoming electrons, and one end, far away from the electron generating part, of the guiding part is an anode end. According to the electromagnetic wave generating device, as the directions of the electrons are changed for multiple times inside the incoming part, the electrons can be gathered in the process that the electrons proceed inside the incoming part, the electrons can be gathered into an area in a relative concentration mode after leaving the incoming part, and therefore the number of the electrons received inside a unit area of a region is increased.

The invention discloses a field emission illumination device comprising a first substrate, a second substrate, a micro channel plate, a grid layer, a positive layer and a fluorescent layer. The micro channel plate is mounted between the first substrate and the second substrate; the grid layer is mounted between the first substrate and the micro channel plate and provided with a grapheme field emission assembly; the positive layer is mounted between the second substrate and the micro channel plate; and the fluorescent layer is mounted between the micro channel plate and the positive layer. With grapheme as an emission source, start voltage of the field can be reduced; and with the micro channel plate as an electronic multiplier pipe, when an electron passes through the micro channel plate, an axial electric field of the micro channel plate forces the electron to have a crash with the channel wall for a plurality of times, so electron numbers are multiplied.

This invention relates to an electronic element having an electron function which acts even at room temperature using a super dielectric effect. The element has a crystalline electron system, and uses a perovskite crystal in the ground state of a “macroscopic quantum effect” which occurs when the electron number is defined, or nearly defined. The electronic element used in an electric field such that the two-dimensional plane of doped crystals ground state of a “fractional quantum Hall effect” wherein the doping amount of the crystals is 0.05 or less, or if localization is introduced, 0.6 or less, and the crystals may have a doping amount variation determined by the degree of localization.

The invention relates to the technical field of photomultipliers, and provides a method for improving the dynamic range of a photomultiplier so as to solve the problem that when an existing photomultiplier detects strong light signals, the dynamic range of a device is limited due to the fact that the number of multiplied electrons is too large. When the photomultiplier detects a strong light signal, cathode current or dynode current of the photomultiplier is greater than a set trigger threshold, and the working voltage of a dynode system or a modulation electrode is subjected to linkage adjustment, so that the number of electrons entering a subsequent dynode is reduced or the energy is reduced, and the whole photomultiplier works in a linear working region. The method for improving the dynamic range of the photomultiplier makes the photomultiplier better adapt to the change of light signal intensity, and the dynamic range of a common photomultiplier can be increased by 2-10 times or even higher on the original basis.

The invention discloses a surface-enhanced laser-induced breakdown spectrum enhancement method. The method increases electron number density, enhances the emission spectrum strength of plasma and improves the detection limit of surface-enhanced laser-induced breakdown spectrum technology (SENLIBS) by virtue of the advantages that argon atoms have a semi-stable state with a relatively low excitation energy state and are easily ionized to generate electrons. Compared with existing SENLIBS technology pretreatment methods, the method disclosed by the invention avoids the cumbersomeness of the existing pretreatment methods (such as liquid-liquid extraction and chemical replacement) and improves the analysis efficiency of the SENLIBS technology.

The invention discloses an injected electron collector. The injected electron collector comprises an injected electron collection unit, a bias power supply unit, a data acquisition processing unit, and an adjusting unit. The injected electron collection unit is inserted in a device by a window of a tokamak device, and is capable of moving upwards and downwards in the device, and is used to collect injected electrons. The bias power supply unit is used to provide bias for the injected electrons, and is used to convey the injected electrons to the data acquisition processing unit. The data acquisition processing unit is used to acquire injected electron current, and is used to determine the number of the collected injected electrons according to the injected electron current. An electron injection source and an injector angle adjusting unit are used to adjust the electron density of the electron injection source and the injection angle of the electron drift injector in a self-adaptive manner according to the difference between the injected electron numbers in a fixed interval, and when the tokamak device has a maximum injection electron rate, the electron injection source has the optimal electron density and the electron drift injector has the optimal injection angle correspondingly.

A particle includes: a metal; and a compound containing a hydrogen-bonding forming group, an absorption group different from the hydrogen-bonding forming group, and an aromatic ring, M representing the metal, A representing the absorption group, B representing the hydrogen-bonding forming group, a representing an integer of 0 or greater, b representing an integer of 0 or greater, c representing an integer of 1 or greater, R1 representing an aromatic ring (a planar ring up to a pi-electron number of 24) and a derivative of the aromatic ring, R2 through R5 representing a hydrogen atom, saturated hydrocarbon, unsaturated hydrocarbon, an ether bond, an ester bond, a cyano group, or derivatives of the substances and bonds, and the compound having a structure expressed by the following chemical formula.

The invention provides a malposition lithium iron silicate and a preparation method thereof and discloses a high-performance lithium ion battery positive electrode material lithium iron silicate. The chemical formula of the material is Li2-2xFe1+xSiO4 (x is greater than 0 and less than or equal to 0.5), and the material is of a common silicate crystal structure. The invention further discloses a method for preparing the lithium iron silicate. The method comprises the following steps: uniformly mixing compounds containing a lithium source, an iron source and a silicon source; and then calcinating in the presence of an inert gas, thereby obtaining the lithium iron silicate material. The lithium iron silicate material has matched reaction electron number and ion number, is capable of solving the problem of cation shuffling in a circulating process and thus has relatively high charge-discharge capacity and stable cycle performance.

The invention provides a method for evaluating a crystal electron density distribution model and application thereof. The evaluation method comprises the following steps: S1, calculating a structure amplitude value of an accurate electron density distribution model of a to-be-detected crystal subjected to first perturbation, and enabling the sum of accurate electron density distribution models of the various atoms in the to-be-detected crystal in a structure cell after perturbation to be the same as the extranuclear electron number of corresponding atoms by virtue of the first perturbation; S2, calculating a structure amplitude value of a current electron density distribution model of the to-be-detected crystal subjected to perturbation, and enabling a low-density area in the current electron density distribution model to be changed by virtue of perturbation; and S3, comparing the structure amplitude value in S2 with the structure amplitude value in S1 so as to evaluate the current electron density distribution model. The evaluation method disclosed by the invention can be used for crystal structure analysis. The traditional evaluation method is failed under the low data resolution condition, while the evaluation method provided by the invention is still effective.