55 results about "Electron multiplication" patented technology

The invention discloses an axial asymmetric micro-channel plate structure based on an amorphous silicon material and a preparation method of the axial asymmetric micro-channel plate structure. The axial asymmetric micro-channel plate structure comprises a plurality of micro-channels arranged in a penetrating mode in the thickness direction of a device; each micro-channel is provided with an inlet section and an outlet section along the axial direction of the micro-channel plate; the channel geometric parameters of the micro-channels are different on the inlet section and the outlet section; or the equivalent electric fields of the micro-channels are distributed on the inlet section and the outlet section in a different manner; the inlet section of each micro-channel is used for regulating and controlling the initial incidence condition of electrons and the first effective interaction between the inlet section and the inner wall of the channel; collaborative design is carried out on geometrical morphology, electrical characteristics and material characteristics of the microchannels in the axial direction according to different physical stages of the electronic multiplication process corresponding to the structural level of the microchannels. According to the structure, higher controllability and consistency are obtained in the multiplication and transmission process of electrons in the channel on the structural level, and the structural rationality and design flexibility of the micro-channel plate serving as an electron multiplier are improved.

The invention discloses a method for simply and rapidly installing a dynode of an electron multiplier, and belongs to the field of electron multiplier assembly. According to the method, extra tools are not needed, and only three long screws and a pair of pointed tweezers need to be additionally used. According to the method, the problem that time and labor are wasted when the ceramic plate of the multiplier and nine dynodes are folded and aligned is solved, and the installation of the dynodes can be effectively accelerated. During installation, the three long screws are inserted into the through holes of the ceramic plate bottom plate, then the screws are sleeved with the limiting stainless steel cylinders respectively, then the nine dynodes and the collecting plate are sequentially installed on the ceramic plate bottom plate, then the ceramic plate top plate is sleeved with the three screws, the hexagonal studs are screwed, and the ceramic plate top plate is installed on the ceramic plate bottom plate. And the distance between the top and bottom ceramic plates is about 4mm longer than that of the limiting stainless steel cylinder. The nine dynodes and the collecting plate are sequentially stirred through pointed tweezers, the upper feet of the dynodes and the collecting plate enter the small mounting holes corresponding to the top plate of the ceramic plate, the lower feet of the dynodes do not leave the small mounting holes corresponding to the bottom ceramic plate, and the top ceramic plate and the bottom ceramic plate are tightened after completion. And the long screws are replaced by the original screws of the multiplier in sequence, and the dynode is assembled.

The invention discloses a silicon-based micro-channel plate (MCP) structure and a manufacturing method thereof, relates to the technical field of semiconductor device manufacturing, and aims to solve the problems of poor high temperature resistance, insufficient etching precision, film layer quality defect and process synergy deficiency of a traditional glass-based / organic-based MCP. An 8-inch N-type monocrystalline silicon wafer is adopted in the structure, the thickness of the N-type monocrystalline silicon wafer is (250-350) + / -25 microns, micropores of 3-10 microns are evenly distributed, the hole pitch is 7-22 microns, the inclination angle is 6-12 degrees, the side wall roughness is smaller than or equal to 50 nm, the perpendicularity deviation is smaller than or equal to + / -0.5 degrees, an AlO or AlO / HfO / AlO electron multiplication layer with the thickness of 10-30 nm is prepared on the inner wall of a channel through ALD, and a Cr / Ni electrode with the thickness of 50-80 nm is plated on the surface. According to the method, the OES is used for monitoring SiFs in real time. According to the invention, the double targets of < = 30% of 1kg impact fracture rate and stable electron multiplication gain are achieved, the tolerable temperature reaches 800 DEG C, the secondary electron emission efficiency is improved by 25%, the production efficiency is improved by 20%, the cost is reduced by 15%, and the method is suitable for the high-sensitivity detection fields of night vision imaging, particle detection and the like.

An electron tube is provided in which electrons emitted from an electron emitting section can be reliably made to reach an electron multiplier section, and the electrons can be reliably multiplied in the electron multiplier section. [Solution] The electron tube (1) comprises an electron emitter (3) including a metasurface (32) that emits electrons in response to incidence of electromagnetic waves (W), an electron multiplier (4) that multiplies the electrons emitted from the electron emitter (3), and a first mesh electrode (5) arranged between the electron emitter (3) and the electron multiplier (4). The electron multiplier (4) has an electron incidence region (4a) onto which the electrons emitted from the electron emitter (3) are incident. The distance α between the metasurface (32) and the electron incidence region (4a) is smaller than the width β of the electron incidence region (4a).

The invention discloses a neutron sensitive MCP and a manufacturing method thereof, and the MCP comprises a glass substrate which is provided with a plurality of micro-channels extending from a first surface to a second surface. The microchannel comprises an open end and a blind hole end, and the blind hole end is close to the second surface. An electron multiplication function layer is arranged in the microchannel, a neutron sensitive film layer is arranged on the second surface, and electrode layers are formed on the surfaces of the two ends. According to the invention, neutron capture and electron multiplication functional regions are separated, the blind hole end entity sensitive film layer has no aperture ratio limitation, and the neutron capture probability is maximized; and the U-shaped microchannel realizes electron avalanche amplification. According to the design, the microchannel amplification imaging function is reserved, meanwhile, the influence of the aperture opening ratio on the detection efficiency is avoided, and the detection efficiency is improved.

The embodiment of the invention provides a wide dynamic range ion pulse threshold adaptive counting method and circuit, and the method comprises the steps: a first end of an electron multiplier is connected with an ion signal, a second end is connected with an input end of an amplification circuit, an output end is connected with a first end of a baseline extraction module, and a second end is connected with a first end of a baseline smoothing module; the second end is connected with the input end of the comparison circuit and the output end is connected with the counting circuit; the electron multiplier is used for converting the ion signal into a current pulse; the amplifying circuit is used for converting the current pulse into a voltage pulse; the baseline extraction module is used for extracting a voltage pulse baseline to obtain a baseline signal; the baseline smoothing module is used for smoothing the baseline signal to obtain a smoothed signal; the comparison circuit is used for dynamically determining a self-adaptive threshold value based on the smooth signal, comparing the voltage pulse with the self-adaptive threshold value and outputting a comparison signal; and the counting circuit is used for pulse counting to obtain the number of target pulses. Therefore, the counting accuracy and the counting upper limit are improved.

This electron tube is provided with an electron emission unit including a metasurface from which electrons are emitted in response to entering of an electromagnetic wave having a predetermined electric field vibration direction, an electron multiplication unit that multiplies the electrons emitted from the electron emission unit, and a mesh electrode disposed between the electron emission unit and the electron multiplication unit. The mesh electrode includes a plurality of thin wires defining a plurality of openings arranged in a first direction parallel to the electric field vibration direction. When viewed in a traveling direction of the electromagnetic wave, each of the plurality of openings has an elongated shape of which the longitudinal direction corresponds to a second direction intersecting the first direction at an angle greater than or equal to 45 degrees.

A method for controlling an ion detector is provided. The method includes converting a received ion into emitted electrons, multiplying the emitted electrons, detecting the multiplied electrons, generating a detection signal in response, and determining the ion intensity from the detection signal.

Provided is an electron tube comprising: an electron emitting part including a metasurface that emits electrons in response to incidence of electromagnetic waves; an electron multiplying part that multiplies the electrons emitted from the electron emitting part; and a first mesh electrode disposed between the electron emitting part and the electron multiplying part. The electron multiplying part has an electron incident region on which the electrons emitted from the electron emitting part are incident. The distance between the metasurface and the electron incident region is inferior to the width of the electron incident region.

The invention provides a hierarchical control method and device for a residual gas analyzer and a medium, and the method comprises the steps: receiving a starting instruction sent by machine station equipment, and starting an ion source when the local vacuum degree is smaller than a first preset threshold value; when the total voltage is smaller than a second preset threshold value, an electron multiplier power supply is started; when the local vacuum degree and the total pressure are smaller than a third preset threshold value, a mass spectrometer power supply is started; receiving a vacuum breaking instruction sent by the station equipment, and disconnecting a functional module power supply of the residual gas analyzer; and receiving a power-off instruction sent by the station equipment, and when the local vacuum degree and the total pressure are greater than or equal to a second preset threshold value, cutting off the power supply of the electron multiplier, and when the local vacuum degree and the total pressure are greater than or equal to a first preset threshold value, disconnecting the ion source and the mass spectrometer power supply in sequence. The problem of hardware damage caused by out-of-control vacuum degree of the residual gas analyzer is solved through vacuum degree pre-judgment, graded protection and intelligent collaborative protection methods.

The invention relates to the technical field of gated imaging, and provides an X-ray gated imaging method and system based on a cascade micro-channel plate and hCMOS, and the system sequentially comprises a photoelectric cathode which is used for converting an incident X-ray image into a photoelectron image; the first-stage electron transmission microchannel plate is coupled with the photoelectric cathode and is used for carrying out time slicing on the photoelectron image and outputting electron beam slices carrying time information; the second-stage high-gain micro-channel plate MCP is coupled with the first-stage electron transmission micro-channel plate and is used for carrying out electron multiplication on the electron beam slices and outputting an amplified electron image; and the hCMOS image sensor is coupled with the second-stage high-gain micro-channel plate and is used for directly receiving and detecting the amplified electronic image, converting the amplified electronic image into an electric signal and reading out the electric signal. According to the invention, X-ray gating imaging can be well carried out.

This charged particle detector comprises: a channel-type first multiplication unit having a channel unit that emits electrons in response to incidence of charged particles, multiplies the emitted electrons, and emits the multiplied electrons; a discrete-type second multiplication unit that is disposed to face the first multiplication unit in a prescribed direction, and multiplies the electrons emitted from the channel unit of the first multiplication unit; and an anode that collects the multiplied electrons. The second multiplication unit includes a reduction unit formed such that, on at least one cross section along the prescribed direction, the width decreases toward the first multiplication unit in a direction orthogonal to the prescribed direction. The reduction unit has a pair of surfaces formed to approach each other closer toward the first multiplication unit on the cross section. The second multiplication unit multiplies the electrons that are emitted from the channel unit of the first multiplication unit and are incident on the pair of surfaces.

The invention belongs to the field of mass spectrometry instruments, particularly relates to an ion receiving device, and aims to solve the problem of signal crosstalk among multiple channels of a combined receiver. The ion receiving device provided by the invention comprises a receiver body, and a signal detection cup unit, a slit sheet, a suppression gate unit, a Faraday cup unit and an electron multiplier unit which are mounted on the receiver body, the slit piece, the suppression gate unit and the Faraday cup unit are arranged along a first direction, and an ion beam sequentially passes through the slit piece, the receiver body and the suppression gate unit and then enters the Faraday cup unit; the signal detection cup unit, the Faraday cup unit and the electron multiplier unit are arranged at intervals along a second direction, and the second direction is perpendicular to the first direction. According to the ion receiving device provided by the invention, the signal detection cup unit, the Faraday cup unit and the electron multiplier unit are arranged at intervals along the direction perpendicular to the incident direction of the ion beam, so that signal crosstalk among channels is avoided.

The application provides an electronic detector and an electronic detection system. The electronic detector comprises: a Faraday cage for collecting secondary electrons; an electron multiplier fixed to a shielding outer cylinder, for performing primary amplification of the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier; a power supply ring connected to the input end of the electron multiplier and the output end of the electron multiplier respectively, for providing the first voltage to the input end of the electron multiplier and the second voltage to the output end of the electron multiplier; a semiconductor detector fixed to the shielding outer cylinder, for applying a third voltage and a bias voltage to the secondary electrons to convert the secondary electrons into a current signal after performing secondary amplification; an amplifier circuit connected to the semiconductor detector, for converting the current signal into a voltage signal; and a signal amplification processing circuit, for converting an image signal from the voltage signal after amplification, so that the electronic detection efficiency can be improved and the image signal-to-noise ratio can be enhanced.

The invention discloses an ultraviolet light electron spectrometer which comprises a vacuum cavity and a magnetic shielding layer. A barrel lens type electron energy analyzer is arranged in the magnetic shielding layer, and the barrel lens type electron energy analyzer comprises a lens system and an electron multiplication detector; the lens system comprises two coaxially arranged annular lenses, a uniform annular channel is formed between the two annular lenses, and an ultraviolet light beam incidence channel is formed in the middle of the annular lens on the inner side; the electron multiplication detector is arranged on the upper portion of the inner side face of the inner side annular lens. The ultraviolet light source is arranged at the top of the ultraviolet light beam incidence channel; the sample table is arranged at the bottom of the ultraviolet light beam incidence channel and is arranged opposite to the ultraviolet light source emitting end; according to the invention, the ultraviolet light beam is combined with the barrel lens type electron energy analyzer, so that the miniaturization of the ultraviolet light electron energy spectrometer is realized.

The CEM and ion detector of the present embodiment has a configuration for achieving ion detection with higher sensitivity than the prior art. The channel-type electron multiplier has at least a channel body, an input-side conductive layer, an output-side conductive layer, and an electrode. The channel body contains a channel having a tapered opening portion provided on the input side, and a resistance layer and an electron emission layer formed on the inner wall surface of the channel. The input-side conductive layer is provided on the input end surface of the channel body and a part thereof extends within the tapered opening portion. The output-side conductive layer is provided on the output end surface of the tapered opening portion. The electrode has one or more openings through which charged particles pass, and is disposed on the opposite side of the output end surface with respect to the input end surface. The electrode and the input-side conductive layer are set to the same potential by excluding the influence of an external electric field within the tapered opening portion.

This invention discloses a low-accelerating-voltage radio frequency (RF) cavity, belonging to the field of particle accelerator technology. The RF cavity includes a standing-wave resonant cavity, with its core improvement lying in the periodic arc-shaped corrugated structure on the surface of the inner conductor, and the inner conductor surface being coated with a 5-10 nm thick TiN thin film. This invention disrupts the resonance conditions for secondary electron multiplication through the periodic corrugated structure, while simultaneously utilizing the TiN thin film to reduce the secondary electron yield on the inner conductor surface. The synergistic effect of these two methods achieves highly efficient suppression of the secondary electron multiplication effect with minimal impact on the cavity's RF performance. This low-accelerating-voltage RF cavity has a simple structure and reliable operation, effectively improving the stability and reliability of cavity operation. It is particularly suitable for the focusing cavity of petal accelerators, significantly improving beam quality and reducing beam loss.

An ion detector includes a conversion dynode including a conversion region where electrons are emitted by incident ions, an electron multiplier including an electron incident surface on which the electrons are incident, and an aperture electrode including an aperture through which the electrons traveling from the conversion region to the electron incident surface pass. The conversion region is a region protruding toward a space where the electrons are emitted.

To provide a charged particle detector that can improve spatial resolution while avoiding a decrease in electron utilization efficiency. [Solution] The charged particle detector 1 comprises a microchannel plate 10 having an input surface 10a into which photoelectrons Pe are incident, multiplication units 11 and 12 that perform electron multiplication based on the input of photoelectrons Pe while maintaining positional information of the photoelectrons Pe with respect to the input surface 10a, and an output surface 10b that outputs electrons e1 multiplied by the multiplication units 11 and 12; a resistive anode 20 that receives the incident electrons e1 output from the output surface 10b and outputs a charge signal corresponding to the incident position of the electrons e1; and a mesh anode 30 arranged in the spatial region between the output surface 10b and the resistive anode 20, having an opening 32 that allows the electrons e1 output from the output surface 10b to pass through, and for collecting electrons e2 output from the resistive anode 20.

The utility model relates to a mechanical installation structure of a small electron multiplier. The mechanical installation structure is composed of a shell, a photomultiplier plate, a pressing plate, a protection cover and an insulation screw. The shell comprises a middle circular hollow area and an embedded area; the photomultiplier plate is fastened with a photomultiplier plate mounting screw hole in the bottom wall of the embedded region through an insulating screw; the pressing plate is placed at the upper part of the photomultiplier plate and is fastened with the pressing plate screw holes in the bottom wall of the embedded area through insulating screws; and the protective cover is fastened with the protective cover mounting screw holes in the outer side of the step avoiding part of the embedded area through insulating screws. The mechanical installation structure of the small-sized electron multiplier is simple in design and small in size, can be installed in a narrow detection space, and meets the requirements of special fields requiring electronic amplification. And an innovative voltage applying design is adopted, so that the problem of applying voltage to the photomultiplier plate which is low in thickness and brittle in material is solved.

To provide an electron tube that can appropriately make electromagnetic waves having a predetermined electric field oscillation direction incident on an electron emission section and can appropriately multiply electrons emitted from the electron emission section in response to the incidence of the electromagnetic waves having the predetermined electric field oscillation direction. [Solution] The electron tube (1) comprises an electron emitter (3) including a metasurface (32) that emits electrons in response to incidence of an electromagnetic wave (W) having a predetermined electric field oscillation direction (V), an electron multiplier (4) that multiplies the electrons emitted from the electron emitter (3), and a first mesh electrode (5) arranged between the electron emitter (3) and the electron multiplier (4). The first mesh electrode (5) includes a plurality of wires (52) that define a plurality of openings aligned in a first direction (D1) parallel to the electric field oscillation direction (V). When viewed from the propagation direction (T) of the electromagnetic wave (W), each of the plurality of openings has an elongated shape whose longitudinal direction is a second direction (D2) that intersects with the first direction (D1) at an angle of 45 degrees or more.

An electron tube capable of improving resistance to vibration or impact is provided. [Solution] The electron tube 1 comprises a housing 2 having a window 21a that transmits electromagnetic waves W, an electron emitter 3 that is disposed within the housing 2 facing the window 21a and includes a metasurface 32 that emits electrons on the side opposite the window 21a in response to the incidence of the electromagnetic waves W, and an electron multiplier 4 that is disposed within the housing 2 on the side opposite the window 21a with respect to the electron emitter 3 and multiplies the electrons emitted from the electron emitter 3. The electron multiplier 4 is fixed to the housing 2. The electron emitter 3 is fixed to the electron multiplier 4.

This application discloses an EBAPS device based on an axially asymmetric dual-segment amorphous silicon microchannel plate, comprising: an AVG, a photocathode, an EBCMOS pixel array, an axially asymmetric dual-segment amorphous silicon microchannel plate, and an EBCMOS sensor; the axially asymmetric dual-segment amorphous silicon microchannel plate is disposed between the photocathode and the EBCMOS pixel array; the axially asymmetric dual-segment amorphous silicon microchannel plate is bonded to the EBCMOS pixel array; and the axially asymmetric dual-segment amorphous silicon microchannel plate and the EBCMOS sensor are bonded together. This EBAPS device enables electrons to undergo electron multiplication in a directional manner before entering the silicon target, allowing the multiplied electrons to enter the EBCMOS sensor in a directional manner. Simultaneously, the number of multiplied electrons is greatly increased, and crosstalk between electrons and pixels is isolated, thus improving imaging quality.

This invention belongs to the field of mass spectrometry analysis instruments, specifically relating to an ion receiving device designed to solve the signal crosstalk problem between multiple channels of a combined receiver. The ion receiving device provided by this invention includes a receiver body and a signal detection cup unit, a slit, a suppression grid unit, a Faraday cup unit, and an electron multiplier unit mounted on the receiver body. The slit, suppression grid, and Faraday cup units are arranged along a first direction, and the ion beam sequentially passes through the slit, the receiver body, and the suppression grid unit before entering the Faraday cup unit. The signal detection cup unit, Faraday cup unit, and electron multiplier unit are arranged at intervals along a second direction, which is perpendicular to the first direction. By arranging the signal detection cup unit, Faraday cup unit, and electron multiplier unit at intervals along a direction perpendicular to the ion beam incident direction, the ion receiving device provided by this invention avoids signal crosstalk between channels.

The invention discloses a wide-view-field X-ray polarization detection cubesat device which comprises a mechanical supporting structure, an X-ray polarization detector, an electronics system and a mechanical supporting structure, the X-ray polarization detector and the electronics system are located in the mechanical supporting structure, and the electronics system is used for providing a power source for the X-ray polarization detector. The X-ray polarization detector is responsible for carrying out necessary processing and conversion on signals received from the X-ray polarization detector so as to facilitate subsequent data analysis; the X-ray polarization detector is used for executing measurement of X-ray polarization; according to the X-ray polarization detector, a working mechanism of a photoelectric effect is adopted, based on a microstructure gas detector, a high-granularity gas microchannel plate GMCP is used as an electron multiplier, a charge-sensitive Topmetal pixel chip is matched to image a photoelectron track, the X-ray polarization detector can capture a fine track image of photoelectrons, and the X-ray polarization detector is used for detecting the photoelectron track. Therefore, under the condition of limited photon number, the sensitivity of X-ray polarization detection is improved to the greatest extent.

This electron tube comprises: an electron emission unit including a metasurface that emits electrons in response to incidence of electromagnetic waves; an electron multiplication unit that multiplies the electrons emitted from the electron emission unit; and a mesh electrode disposed between the electron emission unit and the electron multiplication unit. The potential of the mesh electrode is set to a negative value when the potential of the metasurface is used as a reference.

The application discloses a pixelated superconductor coupled semiconductor electron multiplication detector and a detection method. The application comprises a detection array composed of a plurality of microelement pixels, wherein the microelement pixels comprise an energy absorption layer, a superconducting induction layer, a tunnel insulation layer and a semiconductor charge multiplication region; the energy absorption layer is configured to receive target particles or radiation and cause energy deposition; the superconducting induction layer is configured to absorb the energy deposition and excite non-equilibrium quasi-particles; the tunnel insulation layer is configured to allow the non-equilibrium quasi-particles to realize cold injection into the semiconductor charge multiplication region through quantum tunneling effect; and the semiconductor charge multiplication region is configured to amplify the injected carriers through an intrinsic avalanche collision ionization mechanism in an extremely low temperature environment; wherein each microelement pixel works in a Geiger mode, and each microelement pixel is connected to a common output end in a parallel mode, and the reconstruction of incident energy is realized by digitally counting the microelement pixels that cause Geiger discharge.

The invention mainly relates to the technical field of X-ray tubes, and provides a time-resolved pulse X-ray tube which mainly comprises a time-resolved pulse light source, an X-ray tube sleeve, a transparent glass window, an electron multiplier, a photocathode material, a bias power supply, a high-voltage power supply, an electron focusing lens, an X-ray target material and a beryllium window. The pulse light source excites the photocathode material to generate photoelectrons, the photoelectrons are multiplied in the electron multiplier under the action of the bias electric field, and the multiplied electrons are focused into electron beam spots smaller than 1 mm under the action of the high-voltage electric field and the electron focusing lens to bombard the anode target of the X-ray tube at a high speed. Therefore, time-resolved pulse X-rays are generated. The pulse X-ray tube has a very important application prospect in X-ray dynamic imaging.

This charged particle detector comprises: a microchannel plate having an input surface through which charged particles enter, a multiplication unit that performs electron multiplication on the basis of input of the charged particles while maintaining positional information of the charged particles with respect to the input surface, and an output surface through which electrons multiplied by the multiplication unit are outputted; a resistive anode that, when electrons outputted through the output surface enters therein, outputs a charge signal corresponding to the entering position of the electrons; and an anode that is disposed in a spatial region between the output surface and the resistive anode, has an electron passage unit through which the electrons outputted through the output surface are allowed to pass, and is for collecting the electrons outputted from the resistive anode.

The application discloses a kind of open hole type repeller and electron multiplier for mass spectrometer, and open hole type repeller includes repeller substrate, repeller substrate is by sequentially connected and not coplanar multiple plane, present recessed structure;Repeller substrate both sides are provided with one side baffle, by the electric field force of side baffle to the electron moving to two sides, so that electron is gathered to repeller central position;Along the direction of electron propagation, the first substrate plane of repeller substrate is provided with through-hole;The inner side surface of repeller substrate and two side baffles are covered with secondary electron emission film.The application can make the originally intercepted electron by first substrate plane pass through through-hole and be incident to the inner surface of subsequent repeller, so that more secondary electrons are generated in subsequent repeller, and metal grid is arranged at the opening of repeller, and the height of the side baffle of repeller is adjusted, to focus electron and optimize the transmission trajectory of electron between repellers, which significantly improves the gain.