76 results about "Electron multiplication" patented technology

The invention discloses an axial asymmetric micro-channel plate structure based on an amorphous silicon material and a preparation method of the axial asymmetric micro-channel plate structure. The axial asymmetric micro-channel plate structure comprises a plurality of micro-channels arranged in a penetrating mode in the thickness direction of a device; each micro-channel is provided with an inlet section and an outlet section along the axial direction of the micro-channel plate; the channel geometric parameters of the micro-channels are different on the inlet section and the outlet section; or the equivalent electric fields of the micro-channels are distributed on the inlet section and the outlet section in a different manner; the inlet section of each micro-channel is used for regulating and controlling the initial incidence condition of electrons and the first effective interaction between the inlet section and the inner wall of the channel; collaborative design is carried out on geometrical morphology, electrical characteristics and material characteristics of the microchannels in the axial direction according to different physical stages of the electronic multiplication process corresponding to the structural level of the microchannels. According to the structure, higher controllability and consistency are obtained in the multiplication and transmission process of electrons in the channel on the structural level, and the structural rationality and design flexibility of the micro-channel plate serving as an electron multiplier are improved.

A high-gain photomultiplier tube and a method for manufacturing the same. The photomultiplier tube comprises an upper ceramic substrate and a lower ceramic substrate, with a photocathode, a grid, an anode, and a plurality of electron multipliers disposed between the two ceramic substrates. A metal conductive film is deposited on the surfaces of the upper and lower ceramic substrates opposite the electron multipliers, and the metal conductive film is in mechanical contact with each electron multiplier. The photocathode, grid, anode, and electron multipliers are each connected and fixed to the ceramic substrate via positioning pins. A voltage divider resistor is connected between the photocathode and the positioning pin of the first-stage electron multiplier, between the positioning pins of two adjacent electron multipliers, and between the positioning pin of the last-stage electron multiplier and ground. The potential of each electron multiplier is set by adjusting the voltage divider resistor, and the potential difference between two adjacent electron multipliers and the potential difference between the last-stage electron multiplier and ground is in the form of a differentiated voltage divider. The present invention improves the gain and lifespan of the photomultiplier tube.

The invention discloses a method for simply and rapidly installing a dynode of an electron multiplier, and belongs to the field of electron multiplier assembly. According to the method, extra tools are not needed, and only three long screws and a pair of pointed tweezers need to be additionally used. According to the method, the problem that time and labor are wasted when the ceramic plate of the multiplier and nine dynodes are folded and aligned is solved, and the installation of the dynodes can be effectively accelerated. During installation, the three long screws are inserted into the through holes of the ceramic plate bottom plate, then the screws are sleeved with the limiting stainless steel cylinders respectively, then the nine dynodes and the collecting plate are sequentially installed on the ceramic plate bottom plate, then the ceramic plate top plate is sleeved with the three screws, the hexagonal studs are screwed, and the ceramic plate top plate is installed on the ceramic plate bottom plate. And the distance between the top and bottom ceramic plates is about 4mm longer than that of the limiting stainless steel cylinder. The nine dynodes and the collecting plate are sequentially stirred through pointed tweezers, the upper feet of the dynodes and the collecting plate enter the small mounting holes corresponding to the top plate of the ceramic plate, the lower feet of the dynodes do not leave the small mounting holes corresponding to the bottom ceramic plate, and the top ceramic plate and the bottom ceramic plate are tightened after completion. And the long screws are replaced by the original screws of the multiplier in sequence, and the dynode is assembled.

The invention belongs to the technical field of vacuum electronic devices, and particularly relates to a dynode with an edge expansion type inner substrate and an electron multiplier comprising the dynode. The dynode comprises a grid mesh assembly, a base frame box and an edge expansion type inner substrate, and the inner substrate is located in the base frame box. The lining bottom comprises an arc-shaped side wall part, an upper wall, a lower wall and a bent part; the bent parts are arranged between the arc-shaped side wall part and the upper wall and between the arc-shaped side wall and the lower wall; the base frame box comprises a side wall, and an upper baffle and a lower baffle which are connected with the side wall; the arc-shaped side wall part of the lining bottom is attached to the side wall of the base frame box, the upper wall of the lining bottom is tightly attached to the upper baffle of the base frame box, and the lower wall of the lining bottom is tightly attached to the lower baffle of the base frame box. The inner substrate structure enables the electric field in the dynode to change, and especially the electric field intensity at the corners in the dynode, namely the area where the bent part is located, is obviously changed. The problem of low dynode electron collection efficiency is solved, and the gain of the electron multiplier is improved.

The invention discloses a silicon-based micro-channel plate (MCP) structure and a manufacturing method thereof, relates to the technical field of semiconductor device manufacturing, and aims to solve the problems of poor high temperature resistance, insufficient etching precision, film layer quality defect and process synergy deficiency of a traditional glass-based / organic-based MCP. An 8-inch N-type monocrystalline silicon wafer is adopted in the structure, the thickness of the N-type monocrystalline silicon wafer is (250-350) + / -25 microns, micropores of 3-10 microns are evenly distributed, the hole pitch is 7-22 microns, the inclination angle is 6-12 degrees, the side wall roughness is smaller than or equal to 50 nm, the perpendicularity deviation is smaller than or equal to + / -0.5 degrees, an AlO or AlO / HfO / AlO electron multiplication layer with the thickness of 10-30 nm is prepared on the inner wall of a channel through ALD, and a Cr / Ni electrode with the thickness of 50-80 nm is plated on the surface. According to the method, the OES is used for monitoring SiFs in real time. According to the invention, the double targets of < = 30% of 1kg impact fracture rate and stable electron multiplication gain are achieved, the tolerable temperature reaches 800 DEG C, the secondary electron emission efficiency is improved by 25%, the production efficiency is improved by 20%, the cost is reduced by 15%, and the method is suitable for the high-sensitivity detection fields of night vision imaging, particle detection and the like.

An electron tube is provided in which electrons emitted from an electron emitting section can be reliably made to reach an electron multiplier section, and the electrons can be reliably multiplied in the electron multiplier section. [Solution] The electron tube (1) comprises an electron emitter (3) including a metasurface (32) that emits electrons in response to incidence of electromagnetic waves (W), an electron multiplier (4) that multiplies the electrons emitted from the electron emitter (3), and a first mesh electrode (5) arranged between the electron emitter (3) and the electron multiplier (4). The electron multiplier (4) has an electron incidence region (4a) onto which the electrons emitted from the electron emitter (3) are incident. The distance α between the metasurface (32) and the electron incidence region (4a) is smaller than the width β of the electron incidence region (4a).

The invention discloses a neutron sensitive MCP and a manufacturing method thereof, and the MCP comprises a glass substrate which is provided with a plurality of micro-channels extending from a first surface to a second surface. The microchannel comprises an open end and a blind hole end, and the blind hole end is close to the second surface. An electron multiplication function layer is arranged in the microchannel, a neutron sensitive film layer is arranged on the second surface, and electrode layers are formed on the surfaces of the two ends. According to the invention, neutron capture and electron multiplication functional regions are separated, the blind hole end entity sensitive film layer has no aperture ratio limitation, and the neutron capture probability is maximized; and the U-shaped microchannel realizes electron avalanche amplification. According to the design, the microchannel amplification imaging function is reserved, meanwhile, the influence of the aperture opening ratio on the detection efficiency is avoided, and the detection efficiency is improved.

The present invention relates to the field of high dynamic range imaging, and in particular to a high dynamic range imaging system. The system comprises a secondary power conversion module, an optical lens, an electron bombardment device, and a detector processing board. The secondary power conversion module simultaneously supplies power to the electron bombardment device and the detector processing board. The electron bombardment device comprises a photocathode and a back-illuminated TDICMOS detector. The detector processing board comprises a detector driver and an imaging controller. The optical lens focuses incident light onto the photocathode, accelerates it via high voltage, and the high-speed electrons output by the photocathode bombard the back-illuminated TDICMOS detector to generate electron multiplication. The imaging controller receives externally input imaging parameters, sets the current line period, integration level, pixel gain, analog gain, and electron bombardment voltage, and outputs an electron bombardment voltage control signal to the secondary power conversion module and a detector drive control signal to the detector driver. The present invention is capable of detecting weak light.

The embodiment of the invention provides a wide dynamic range ion pulse threshold adaptive counting method and circuit, and the method comprises the steps: a first end of an electron multiplier is connected with an ion signal, a second end is connected with an input end of an amplification circuit, an output end is connected with a first end of a baseline extraction module, and a second end is connected with a first end of a baseline smoothing module; the second end is connected with the input end of the comparison circuit and the output end is connected with the counting circuit; the electron multiplier is used for converting the ion signal into a current pulse; the amplifying circuit is used for converting the current pulse into a voltage pulse; the baseline extraction module is used for extracting a voltage pulse baseline to obtain a baseline signal; the baseline smoothing module is used for smoothing the baseline signal to obtain a smoothed signal; the comparison circuit is used for dynamically determining a self-adaptive threshold value based on the smooth signal, comparing the voltage pulse with the self-adaptive threshold value and outputting a comparison signal; and the counting circuit is used for pulse counting to obtain the number of target pulses. Therefore, the counting accuracy and the counting upper limit are improved.

An illustrative method comprises determining, based on a mass analysis performed by an electron multiplier-based mass analyzer on a first ion population produced from a sample, a mass spectrum comprising one or more peaks representing intensity as a function of mass-to-charge ratio (m / z) of the first ion population across a range of m / z values; determining, based on the mass spectrum, a total ion count of the first ion population and a peak ion count associated with a peak located at a particular m / z value; determining, based on the total ion count of the first ion population and the peak ion count, a total ion count of a second ion population produced from the sample and injected into an image current-based mass analyzer for mass analysis; and setting, based on the total ion count of the second ion population, a calibration parameter for the image current-based mass analyzer.

This electron tube is provided with an electron emission unit including a metasurface from which electrons are emitted in response to entering of an electromagnetic wave having a predetermined electric field vibration direction, an electron multiplication unit that multiplies the electrons emitted from the electron emission unit, and a mesh electrode disposed between the electron emission unit and the electron multiplication unit. The mesh electrode includes a plurality of thin wires defining a plurality of openings arranged in a first direction parallel to the electric field vibration direction. When viewed in a traveling direction of the electromagnetic wave, each of the plurality of openings has an elongated shape of which the longitudinal direction corresponds to a second direction intersecting the first direction at an angle greater than or equal to 45 degrees.

The invention relates to the technical field of vacuum measuring instruments, in particular to an fA-level tiny signal amplifier for a four-level mass spectrometer, which comprises a positive ion signal processing system, an electronic signal processing system, a signal acquisition module and an isolation module, wherein the positive ion signal processing system comprises a positive ion I-V conversion module and a positive ion signal conditioning module, and the positive ion I-V conversion module is connected with the positive ion signal conditioning module; the electronic signal processing system comprises an electronic I-V conversion module and an electronic signal conditioning module, and the electronic I-V conversion module is connected with the electronic signal conditioning module; the positive ion signal conditioning module and the electronic signal conditioning module are both connected with the signal acquisition module; the signal acquisition module is connected with the isolation module. The quadrupole mass spectrometer can directly and effectively amplify and collect positive ion signals at the Faraday cup end of the quadrupole mass spectrometer and electronic signals at the electron multiplier end, and measurement of positive ions in the range of 1 * 10 <-14 > A to 1 * 10 <-8 > A and electrons in the range of 1 * 10 <-12 > A to 1 * 10 <-6 > A is achieved.

The invention discloses a small-halo vacuum photoelectric device and application thereof. The small-halo vacuum photoelectric device comprises a first ceramic ring, a second ceramic ring, a first metal ring, a second metal ring, an elastic pressing ring and an electron multiplication plate with a conductive input surface and a conductive output surface, a first ceramic ring is arranged on the bottom surface of the first metal ring; a second metal ring is arranged on the bottom surface of the first ceramic ring; the second metal ring is arranged on the top surface of the second ceramic ring; an anode is arranged on the bottom surface of the second ceramic ring. By arranging an angle from 89 degrees to 86 degrees on the elastic compression ring of the structure device, plane contact between the elastic compression ring and the conductive input surface of the electron multiplication plate is realized, and local or complete non-electric contact between the elastic compression ring and the electron multiplication plate and related surfaces thereof is eliminated; the halo phenomenon generated by stray light generated by surface deformation of the electron multiplier plate is eliminated, and the imaging quality is improved.

The invention relates to calibration of a mirror current-based mass analyzer included in a mass spectrometer. An exemplary method includes determining a mass spectrum including one or more peaks representing an intensity as a function of m / z of a first ion population across a range of mass-to-charge ratio (m / z) values based on a mass analysis performed by an electron multiplier-based mass analyzer on the first ion population generated from a sample; determining a total ion count of the first ion population and a peak ion count associated with a peak located at a particular m / z value based on the mass spectrum; determining a total ion count of a second ion population generated from the sample and injected into a mirror current-based mass analyzer for mass analysis based on the total ion count of the first ion population and the peak ion count; and setting a calibration parameter for the mirror current-based mass analyzer based on the total ion count of the second ion population.

A method for controlling an ion detector is provided. The method includes converting a received ion into emitted electrons, multiplying the emitted electrons, detecting the multiplied electrons, generating a detection signal in response, and determining the ion intensity from the detection signal.

Provided is an electron tube comprising: an electron emitting part including a metasurface that emits electrons in response to incidence of electromagnetic waves; an electron multiplying part that multiplies the electrons emitted from the electron emitting part; and a first mesh electrode disposed between the electron emitting part and the electron multiplying part. The electron multiplying part has an electron incident region on which the electrons emitted from the electron emitting part are incident. The distance between the metasurface and the electron incident region is inferior to the width of the electron incident region.

The invention provides a hierarchical control method and device for a residual gas analyzer and a medium, and the method comprises the steps: receiving a starting instruction sent by machine station equipment, and starting an ion source when the local vacuum degree is smaller than a first preset threshold value; when the total voltage is smaller than a second preset threshold value, an electron multiplier power supply is started; when the local vacuum degree and the total pressure are smaller than a third preset threshold value, a mass spectrometer power supply is started; receiving a vacuum breaking instruction sent by the station equipment, and disconnecting a functional module power supply of the residual gas analyzer; and receiving a power-off instruction sent by the station equipment, and when the local vacuum degree and the total pressure are greater than or equal to a second preset threshold value, cutting off the power supply of the electron multiplier, and when the local vacuum degree and the total pressure are greater than or equal to a first preset threshold value, disconnecting the ion source and the mass spectrometer power supply in sequence. The problem of hardware damage caused by out-of-control vacuum degree of the residual gas analyzer is solved through vacuum degree pre-judgment, graded protection and intelligent collaborative protection methods.

A method for determining a performance parameter of an electron multiplier (e.g. parameter indicative of gain) comprises comparing an electron flux of a first electron emissive surface with an electron flux of a second electron emissive surface, or of an electron collector. The electron emissive surfaces form part of an electron multiplication chain, and may be discrete dynodes or provided by a single electron emission surface (e.g. a channel of a channel electron multiplier, or a plate of a microchannel plate electron multiplier). The first electron emissive surface may be earlier in the chain and less susceptible to electron flux-mediated gain degradation. A current ratio from the two electron emissive surfaces may be determined and compared with a comparator. An operating parameter (e.g. voltage bias) of the electron multiplier may be altered based on the determined performance parameter or current ratio. The invention may obviate or reduces the need for manual gain adjustment by adjusting the gain continuously and automatically to account for gain instability based on the comparison.

The invention relates to the technical field of gated imaging, and provides an X-ray gated imaging method and system based on a cascade micro-channel plate and hCMOS, and the system sequentially comprises a photoelectric cathode which is used for converting an incident X-ray image into a photoelectron image; the first-stage electron transmission microchannel plate is coupled with the photoelectric cathode and is used for carrying out time slicing on the photoelectron image and outputting electron beam slices carrying time information; the second-stage high-gain micro-channel plate MCP is coupled with the first-stage electron transmission micro-channel plate and is used for carrying out electron multiplication on the electron beam slices and outputting an amplified electron image; and the hCMOS image sensor is coupled with the second-stage high-gain micro-channel plate and is used for directly receiving and detecting the amplified electronic image, converting the amplified electronic image into an electric signal and reading out the electric signal. According to the invention, X-ray gating imaging can be well carried out.

This charged particle detector comprises: a channel-type first multiplication unit having a channel unit that emits electrons in response to incidence of charged particles, multiplies the emitted electrons, and emits the multiplied electrons; a discrete-type second multiplication unit that is disposed to face the first multiplication unit in a prescribed direction, and multiplies the electrons emitted from the channel unit of the first multiplication unit; and an anode that collects the multiplied electrons. The second multiplication unit includes a reduction unit formed such that, on at least one cross section along the prescribed direction, the width decreases toward the first multiplication unit in a direction orthogonal to the prescribed direction. The reduction unit has a pair of surfaces formed to approach each other closer toward the first multiplication unit on the cross section. The second multiplication unit multiplies the electrons that are emitted from the channel unit of the first multiplication unit and are incident on the pair of surfaces.

The invention belongs to the field of mass spectrometry instruments, particularly relates to an ion receiving device, and aims to solve the problem of signal crosstalk among multiple channels of a combined receiver. The ion receiving device provided by the invention comprises a receiver body, and a signal detection cup unit, a slit sheet, a suppression gate unit, a Faraday cup unit and an electron multiplier unit which are mounted on the receiver body, the slit piece, the suppression gate unit and the Faraday cup unit are arranged along a first direction, and an ion beam sequentially passes through the slit piece, the receiver body and the suppression gate unit and then enters the Faraday cup unit; the signal detection cup unit, the Faraday cup unit and the electron multiplier unit are arranged at intervals along a second direction, and the second direction is perpendicular to the first direction. According to the ion receiving device provided by the invention, the signal detection cup unit, the Faraday cup unit and the electron multiplier unit are arranged at intervals along the direction perpendicular to the incident direction of the ion beam, so that signal crosstalk among channels is avoided.

The application provides an electronic detector and an electronic detection system. The electronic detector comprises: a Faraday cage for collecting secondary electrons; an electron multiplier fixed to a shielding outer cylinder, for performing primary amplification of the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier; a power supply ring connected to the input end of the electron multiplier and the output end of the electron multiplier respectively, for providing the first voltage to the input end of the electron multiplier and the second voltage to the output end of the electron multiplier; a semiconductor detector fixed to the shielding outer cylinder, for applying a third voltage and a bias voltage to the secondary electrons to convert the secondary electrons into a current signal after performing secondary amplification; an amplifier circuit connected to the semiconductor detector, for converting the current signal into a voltage signal; and a signal amplification processing circuit, for converting an image signal from the voltage signal after amplification, so that the electronic detection efficiency can be improved and the image signal-to-noise ratio can be enhanced.

The utility model provides a trans-impedance amplifier-based gain self-adjusting ion signal detection circuit, comprising an electron multiplier CEM which converts an ion signal into an electron beam and transmits the electron beam to a low-gain signal amplification circuit and a high-gain signal amplification circuit through a trans-impedance amplifier U1. The output amplitude recognition and transmission circuit is used for judging the amplitude output by the low-gain signal amplification circuit and the high-gain signal amplification circuit and transmitting a signal generated after comparison to the control unit through an ADC, and the control unit controls the I / V conversion resistance adjustable circuit to switch the resistance value of the transimpedance amplifier U1 according to the collected signal. And transmitting to a PC end to form a mass spectrum. According to the gain self-adjusting ion signal detection circuit based on the trans-impedance amplifier, the accuracy and the applicability of mass spectrum detection are improved; meanwhile, the problem of mass spectrum peak shape abnormity caused by large change of the concentration range of the sample to be detected is solved.

The invention discloses an ultraviolet light electron spectrometer which comprises a vacuum cavity and a magnetic shielding layer. A barrel lens type electron energy analyzer is arranged in the magnetic shielding layer, and the barrel lens type electron energy analyzer comprises a lens system and an electron multiplication detector; the lens system comprises two coaxially arranged annular lenses, a uniform annular channel is formed between the two annular lenses, and an ultraviolet light beam incidence channel is formed in the middle of the annular lens on the inner side; the electron multiplication detector is arranged on the upper portion of the inner side face of the inner side annular lens. The ultraviolet light source is arranged at the top of the ultraviolet light beam incidence channel; the sample table is arranged at the bottom of the ultraviolet light beam incidence channel and is arranged opposite to the ultraviolet light source emitting end; according to the invention, the ultraviolet light beam is combined with the barrel lens type electron energy analyzer, so that the miniaturization of the ultraviolet light electron energy spectrometer is realized.

The CEM and ion detector of the present embodiment has a configuration for achieving ion detection with higher sensitivity than the prior art. The channel-type electron multiplier has at least a channel body, an input-side conductive layer, an output-side conductive layer, and an electrode. The channel body contains a channel having a tapered opening portion provided on the input side, and a resistance layer and an electron emission layer formed on the inner wall surface of the channel. The input-side conductive layer is provided on the input end surface of the channel body and a part thereof extends within the tapered opening portion. The output-side conductive layer is provided on the output end surface of the tapered opening portion. The electrode has one or more openings through which charged particles pass, and is disposed on the opposite side of the output end surface with respect to the input end surface. The electrode and the input-side conductive layer are set to the same potential by excluding the influence of an external electric field within the tapered opening portion.

To provide a method for determining performance parameters of an electron multiplier having a series of electron emission surfaces forming an electron multiplication chain.SOLUTION: The method includes the step of: comparing a first electron beam of a first electron emission surface of the electron multiplication chain with a second electron beam of a second electron emission surface of the electron multiplication chain or with a second electron beam of an electron collector of the electron multiplier.SELECTED DRAWING: Figure 1

This invention discloses a low-accelerating-voltage radio frequency (RF) cavity, belonging to the field of particle accelerator technology. The RF cavity includes a standing-wave resonant cavity, with its core improvement lying in the periodic arc-shaped corrugated structure on the surface of the inner conductor, and the inner conductor surface being coated with a 5-10 nm thick TiN thin film. This invention disrupts the resonance conditions for secondary electron multiplication through the periodic corrugated structure, while simultaneously utilizing the TiN thin film to reduce the secondary electron yield on the inner conductor surface. The synergistic effect of these two methods achieves highly efficient suppression of the secondary electron multiplication effect with minimal impact on the cavity's RF performance. This low-accelerating-voltage RF cavity has a simple structure and reliable operation, effectively improving the stability and reliability of cavity operation. It is particularly suitable for the focusing cavity of petal accelerators, significantly improving beam quality and reducing beam loss.

The invention relates to the field of electron multiplication sources, and provides an electron multiplication source and application thereof, and the electron multiplication source comprises a tube body with a tube cavity; the electron source comprises an optical fiber and an electron excitation layer; the anode assembly is located on an emergent path of the electron beam, is opposite to the light emergent end of the optical fiber and is arranged at an interval; the dynode group comprises at least one dynode arranged on the cavity wall of the tube cavity; and a power supply assembly. The electron multiplication source has the advantages of being small in size, high in integration degree, good in stability, high in multiplication effect and the like.

An ion detector includes a conversion dynode including a conversion region where electrons are emitted by incident ions, an electron multiplier including an electron incident surface on which the electrons are incident, and an aperture electrode including an aperture through which the electrons traveling from the conversion region to the electron incident surface pass. The conversion region is a region protruding toward a space where the electrons are emitted.

To provide a charged particle detector that can improve spatial resolution while avoiding a decrease in electron utilization efficiency. [Solution] The charged particle detector 1 comprises a microchannel plate 10 having an input surface 10a into which photoelectrons Pe are incident, multiplication units 11 and 12 that perform electron multiplication based on the input of photoelectrons Pe while maintaining positional information of the photoelectrons Pe with respect to the input surface 10a, and an output surface 10b that outputs electrons e1 multiplied by the multiplication units 11 and 12; a resistive anode 20 that receives the incident electrons e1 output from the output surface 10b and outputs a charge signal corresponding to the incident position of the electrons e1; and a mesh anode 30 arranged in the spatial region between the output surface 10b and the resistive anode 20, having an opening 32 that allows the electrons e1 output from the output surface 10b to pass through, and for collecting electrons e2 output from the resistive anode 20.