12 results about "Secondary electron emission coefficient" patented technology

An electrostatic chuck assembly is provided that is less prone to spatial discharge within a gas passage plug. This electrostatic chuck assembly comprises a ceramic plate having an upper surface on which a wafer is placed and a lower surface opposite to the upper surface, and incorporating internal electrodes which are ESC electrodes and / or RF electrodes; a cooling plate attached to the lower surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the lower surface to the upper surface; a gas passage plug provided to close the plug placement hole and configured to allow gas to pass through its interior; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. At least a portion of the gas-contactable surface within the gas passage plug is made of a low SEEC material having a secondary electron emission coefficient (SEEC) of 5.0 or less.

The application provides a method and system for measuring a secondary electron emission coefficient of a medium material, the method comprising the following steps: obtaining a total primary electron beam current, and cutting the total primary electron beam current to obtain a primary electron beam current; obtaining a beam cutting current and a sampling current, and calculating a ratio of the primary electron beam current to the beam cutting current; obtaining the beam cutting current and the sampling current of the medium material to be measured, and obtaining the secondary electron emission coefficient of the medium material to be measured under primary electron incidence energy; neutralizing accumulated charges on the surface of the medium material to be measured by using a first neutralizing electron gun and a second neutralizing electron gun; measuring the secondary electron emission coefficient under different primary electron incidence energies to obtain a secondary electron emission coefficient curve. The accumulated charges on the surface of the medium material to be measured are neutralized and removed by using the neutralizing electron gun, the problems that a long time is consumed in the previous medium material measurement process and the measurement of the secondary electron emission coefficient less than 1 cannot be realized are solved, and the complete curve of the secondary electron emission coefficient of the medium material is rapidly and accurately measured.

This invention discloses a method for designing the optimal secondary electron emission coefficient (SEEC) rectangular slot array structure size, comprising the following steps: S1, establishing the size and variation range characterizing the regular array rectangular slot structure; S2, calculating and obtaining the maximum SEEC and SEEC curve based on the size of the regular array rectangular slot structure; S3, calculating the surface impedance based on the operating frequency and the size of the regular array rectangular slot structure; S4, treating the size of the regular array rectangular slot structure as an individual in a population, calculating the fitness value of each particle, and obtaining the optimal combination of rectangular slot array structure sizes. This method can simultaneously reduce the SEEC and surface impedance, and can be used to reduce the SEEC of metal surfaces, providing support for suppressing micro-discharge in high-power microwave components in space.

Provided is an electrostatic chuck assembly in which space discharge does not readily occur in a gas passage plug. This electrostatic chuck assembly comprises: a ceramic plate having a top surface on which a wafer is to be placed and a bottom surface opposite the top surface, and incorporating an internal electrode that is an ESC electrode and / or an RF electrode; a cooling plate attached to the bottom surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the bottom surface to the top surface; a gas passage plug provided so as to close up the plug placement hole and configured to allow a gas to pass therethrough; and a gas introduction passageway provided in the cooling plate and communicating with the plug placement hole. At least a portion of a gas-contactable surface in the gas passage plug is formed from a low secondary electron emission coefficient (SEEC) material having a SEEC of 5.0 or less.

An electrostatic chuck assembly is provided that, while equipped with a gas passage plug, is less prone to surface discharge at the interface between the gas passage plug and the ceramic plate. This electrostatic chuck assembly comprises a ceramic plate having an upper surface on which a wafer is placed and a lower surface opposite the upper surface, and incorporating internal electrodes which are ESC electrodes and / or RF electrodes; a cooling plate attached to the lower surface of the ceramic plate; a plug placement hole penetrating the ceramic plate from the lower surface to the upper surface; a gas passage plug press-fitted into the plug placement hole and configured to allow gas to pass through its interior; and a gas introduction passage provided in the cooling plate and communicating with the plug placement hole. At least one side surface of the gas passage plug and the plug placement hole is made of a low SEEC material having a secondary electron emission coefficient (SEEC) of 5.0 or less.

Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

Methods and apparatuses for processing a substrate are provided herein. For example, a method of processing a substrate includes: applying at least one of low frequency RF power or DC power to an upper electrode disposed adjacent to a processing volume, the upper electrode formed of a high secondary electron emission coefficient material; generating a plasma in the processing volume, the plasma including ions; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power to a lower electrode disposed in the processing volume to accelerate the electrons in the electron beam toward the lower electrode, the bias power including at least one of low frequency RF power or high frequency RF power.

The invention discloses a vacuum insulator with a three-level micro-nano structure on the surface and a preparation method of the vacuum insulator, and mainly solves the technical problems of poor inhibition effect on vacuum surface flashover, unobvious vacuum surface voltage resistance improvement effect and the like in the prior art. The vacuum insulator comprises an insulator base body and a three-stage micro-nano structure arranged on the surface of the insulator base body, the first-stage structure is a zigzag structure and is composed of a plurality of triangular grooves which are formed in the surface of the insulator base body and are continuously arranged, and the surfaces of the triangular grooves are plated with polydopamine transition layers; the second-stage structure is a three-dimensional network structure and is formed by interweaving micron wires on the surface of the transition layer; and the third-level structure is a nano-level molecular film which covers the surface of the microwire. According to the three-level micro-nano structure, multi-scale and multi-level cooperative inhibition can be carried out on secondary electron multiplication in the flashover development process, the secondary electron emission coefficient of an insulating material is reduced, and the vacuum surface flashover voltage of an insulator is greatly improved.

This invention discloses a photomultiplier tube (PMT) dynode film preparation system and method belonging to the field of PMT technology. The system includes a PMT, a vacuum system, and an alkali source assembly. The alkali source assembly includes an external glass tube and internal K, Na, and Cs sources. One end of the glass tube is closed, and the other end is connected to the vacuum system via a tail tube. One end of the PMT is also closed, and the other end is connected to the vacuum system via a tail tube. The K, Na, and Cs sources are connected to pin electrodes via nickel wires to form a circuit. Eleven pin electrodes are led out from the inside of the PMT. This invention can accurately and effectively monitor the secondary electron emission capability of the dynode film, solving the problem of lack of quality control in the dynode preparation process. Furthermore, it improves the secondary electron emission coefficient of the dynode film, resulting in a significant increase in overall PMT gain and achieving good consistency.

The invention discloses a high-gain copper beryllium alloy secondary electron emitter and a preparation method thereof, and relates to the technical field of material preparation, and the preparation method comprises the following steps: carrying out pulse electrolytic polishing surface pretreatment on a punch-formed copper beryllium alloy base material, then putting the copper beryllium alloy base material subjected to surface pretreatment into a tubular furnace, and heating the tubular furnace to obtain a copper beryllium alloy secondary electron emitter; after argon and hydrogen mixed gas is introduced for gas washing, vacuumizing is conducted, then the tubular furnace is heated, low-oxygen-pressure thermal activation treatment is conducted on the copper-beryllium alloy base material in two steps, a beryllium oxide active layer with the high secondary electron emission coefficient is formed on the surface, and the high-gain copper-beryllium alloy secondary electron emitter is obtained. The beryllium oxide active layer is uniform, compact and low in roughness, the copper beryllium alloy secondary emitter is high in secondary electron emission coefficient and stable in performance, and the problem that a conventional copper beryllium alloy secondary electron emitter is insufficient and unstable in performance is effectively solved.

The invention discloses a vacuum insulator with a three-dimensional microstructure on the surface and a preparation method of the vacuum insulator, and aims to solve the technical problems of limited application range, complicated operation, high equipment requirement and the like of the conventional method for increasing the vacuum surface flashover voltage of the insulator. The insulator comprises an insulator base body, a transition layer and a three-dimensional microstructure, wherein the transition layer and the three-dimensional microstructure sequentially coat the insulator base body from inside to outside; the transition layer is made of polydopamine; the three-dimensional microstructure is formed by interweaving micron wires in a three-dimensional space on the surface of the transition layer, and molecular groups with high pressure resistance are grafted on the surface layers of the micron wires. The structure can absorb and restrain electron multiplication in the whole three-dimensional space in the flashover development process, the secondary electron emission coefficient of the insulator is reduced, the development of vacuum surface flashover on the surface of the insulator is restrained, and the surface voltage withstanding level of the insulator is greatly improved.

Provided is an electrostatic chuck assembly in which creepage discharge is unlikely to occur at the interface between a gas passage plug and a ceramic plate while being provided with the gas passage plug. This electrostatic chuck assembly comprises: a ceramic plate having an upper surface on which a wafer is to be placed and a lower surface facing the upper surface, the ceramic plate also having built therein an internal electrode that is an electrostatic chuck (ESC) electrode and / or a radio frequency (RF) electrode; a cooling plate attached to the lower surface of the ceramic plate; a plug arrangement hole penetrating the ceramic plate from the lower surface to the upper surface; a gas passage plug configured to be press-fitted into the plug arrangement hole and allow gas to pass therethrough; and a gas introduction pathway provided in the cooling plate and communicating with the plug arrangement hole. At least one of a side surface of the gas passage plug and the plug arrangement hole is composed of a low secondary electron emission coefficient (SEEC) material having a SEEC of 5.0 or less.