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Method and system for testing secondary electron yield of star-used dielectric materials

A technology of secondary electron emission and dielectric materials, applied in the field of measurement, can solve the problems of long time, large electron current, low test efficiency, etc., and achieve the effect of reducing impact, high test accuracy and improving test efficiency

Inactive Publication Date: 2014-04-30
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of the method introduced in the literature is that it can only test the secondary electron emission coefficient of one material after obtaining a high vacuum, which results in a long time for testing a single sample and low test efficiency.
At the same time, the electron gun used in the literature emits a large electron current, a single pulse current can reach 100μA, and a certain amount of charge accumulation will be generated on the surface of the material, thereby affecting the secondary electron emission characteristics.

Method used

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  • Method and system for testing secondary electron yield of star-used dielectric materials
  • Method and system for testing secondary electron yield of star-used dielectric materials
  • Method and system for testing secondary electron yield of star-used dielectric materials

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Embodiment 1

[0032] The invention provides a test system for the secondary electron emission coefficient of a dielectric material for a star, such as figure 1 As shown, it is a top view of the test sample platform, including:

[0033] Sample table 10, for placing at least one test sample made of a dielectric material;

[0034] A vacuum system 15, used to evacuate the sample stage 10 into a vacuum;

[0035] Electron gun 1, used for emitting high-energy electrons to irradiate test samples;

[0036] The incident electron test Faraday cage 3, the incident electron test Faraday cage 3 is placed on the sample stage, placed under the high-energy electron radiation generated by the electron gun, and connected to the first micro ammeter 13 for testing the electron gun The incident electron current intensity of the emitted energetic electrons;

[0037] The secondary electron collector 4 is placed above the test sample and connected to the second micro ammeter 14 for testing the secondary electron...

Embodiment 2

[0050] The present invention also provides a method for testing the secondary electron emission coefficient of a star dielectric material, comprising the steps of:

[0051] S21: placing the test sample on the sample stage, and using a vacuum system to evacuate the test sample stage;

[0052] S22: Turn on the electron gun to generate high-energy electrons;

[0053] S23: The electron gun emits a single pulsed electron beam, and the emitted electron beam irradiates the incident electron test Faraday cage placed on the sample stage, and a single pulse is measured by the first microcurrent meter connected to the incident electron test Faraday cage The incident current intensity of the electron beam;

[0054] S24: Rotate the sample stage, place any test sample under a single pulsed electron beam irradiation, using the secondary electron collector placed above the test sample and the second microcurrent connected to the secondary electron collector The meter measures the secondary ...

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Abstract

The invention discloses a method and a system for testing secondary electron yield of star-used dielectric materials. The method comprises the following steps of placing at least one testing sample which is made of a star-used dielectric material on a sample platform, and vacuumizing the sample platform by using a vacuum system; turning on an electronic gun, launching a single pulse electron beam by the electronic gun or irradiating an incident electron testing Faraday cylinder placed on the sample platform, and testing the incident current intensity of the single pulse electron beam through a first micro-current meter; rotating the sample platform, placing any testing sample under the irradiation of the single pulse electron beam, and testing the secondary electron launching current of the testing sample by using a secondary electron collecting pole and a second micro-current meter; comparing the incident current intensity with the secondary electron launching current, thus obtaining the secondary electron yield of the sample. The method and the system provided by the invention have the advantages that after the primary high vacuum is obtained, the testing for the secondary electron yields of a plurality of testing samples can be developed, thus the testing efficiency is improved, and the testing accuracy is high.

Description

technical field [0001] The invention relates to the field of measurement, in particular to a test method and a test system for the secondary electron emission coefficient of a dielectric material for satellites. Background technique [0002] The secondary electron emission properties of materials play an important role in industrial production and scientific research. During the charging and discharging process of the spacecraft surface, the secondary electron emission characteristics of the surface dielectric material determine its charging rate and equilibrium potential, which is an important parameter affecting the charging and discharging effect of the spacecraft surface; It is of great significance to study the electrification effect, the secondary electron resonance effect of ultra-high frequency tubes and the micro-discharge effect of microwave components. [0003] Due to the poor conductivity of the dielectric material, when bombarded by incident electrons, the surf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/22
Inventor 陈益峰李得天秦晓刚杨生胜史亮王俊柳青汤道坦
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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