1177 results about "Electron beam irradiation" patented technology

The invention discloses a rapid treatment method for a fracturing flowback fluid. The rapid treatment method comprises: (1) pumping a fracturing flowback fluid into an electron beam irradiation chamber, and staying for 20-120 s in the electron beam irradiation chamber; (2) adding a coagulant and a flocculant into the sewage treated by the electron beam irradiation chamber, and clarifying in a flocculation precipitation pool; (3) feeding the water treated by the flocculation precipitation a precision filtration pool, and carrying out fine filtration; and (4) collecting the water filtered by theprecision filtration pool in a clear water pool. According to the present invention, the gel breaking stage uses physical gel breaking so as to achieve clean gel breaking and greatly reduce the sideeffects of external agents, such that the reuse quality of the fracturing flowback fluid is good, and the fracturing flowback fluid is safe; the gel breaking time is shortened from 5-120 min to 20-120s so as to greatly improve the gel breaking speed; and compared with the traditional chemical gel breaking method and the biological gel breaking method, the method of the present invention simplifyfeeding equipment and other supporting equipment, reduces the occupation area, and reduces the complexity of manual operation.

It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.

A substrate measuring apparatus includes a reference value storage unit, an electron irradiator, a current measuring device, and a property value calculating device. The reference value storage unit stores data on the relationship between current flow in a sample substrate with a contact hole of known characteristics that is irradiated by an electron beam. The current measuring device measures current flow in a test substrate. The property value calculating device calculates the property value of the contact hole formed in a material layer of the test substrate using the current flow in the test substrate and the data stored in the reference value storage unit. The property values of the contact hole may be a surface area of underlying substrate exposed by a contact hole or an amount of residual material remaining in the contact hole.

The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible. To provide high accuracy, the apparatus is configured such that the axes of its optical systems can be aligned, and aberrations corrected, by a variety of methods.

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1-u-vN (0<u, v<1) deposited as thick as 1.0 micron or more. The present invention will easily provide a high luminous efficiency GaN based semiconductor light-emitting device without using any complicated processes such as electron-beam irradiation or thermal annealing.

Decellularization of tissue by means of an amphipathic solvent a well-established practice. However, situations exist where the provision of enhanced decellularization is preferred. There is a demand for treating methods for coping with such situations. Thus, it is intended to provide a method for enhancing decellularization. The method comprises not only the immersing of a tissue in a solution containing an amphiphilic molecule in non-micellar form (for example, 1,2-epoxide polymer) but also performing a radical reaction (for example, treatment selected from the group consisting of exposure to gamma-ray irradiation, ultraviolet irradiation, a free radical supply source, ultrasonication, electron beam irradiation, and X-ray irradiation).

A method for sterilizing at least partly formed packages with electron beam irradiation in a packaging machine involves sterilizing each of at least two at least partially separate areas of the package by way of a respective electron beam sterilizing device, with each of the sterilizing devices being adapted to characteristics of each respective one of the two areas, and also performing a respective relative movement between the package and each of the electron beam sterilizing devices, which movements are adapted for the sterilization of each respective one of the two areas with the sterilizing devices.

An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection. To accomplish the object, the present invention includes a height measurement section which measures height of the electron beam irradiation position on the substrate after the substrate is loaded onto a movable stage, a height correction processing section which corrects the measured height, and a control section which adjusts a focus of the electron beam according to the height corrected by the height correction processing section, wherein a stage position set when the height measurement section measures the height differs from a stage position set when the substrate is irradiated with the electron beam, and the height correction processing section corrects a possible deviation in height resulting from movement from the stage position for the height measurement to the stage position for the electron beam irradiation.

Secondary electrons emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator (77), and is deflected again in a perpendicular direction by an aberration correction electrostatic deflector (711) to form a magnified image on the principal plane of an auxiliary lens (712). The secondary electron beam diverged from the auxiliary lens (712) passes through axial chromatic aberration correction lenses (714-717) and images on a principal plane of an auxiliary lens (718) for a magnifying lens (719). The magnified image is formed in a position spaced apart from the optical axis. Therefore, when the secondary electron beam diverged from the auxiliary lens (712) is incident on the axial chromatic aberration correction lenses without any change, large abaxial aberration occurs. To avoid it, the auxiliary lens (712) is used to form the image of an NA aperture (724) in substantially a middle (723) in the light axis direction of the axial chromatic aberration correction lenses (714-717).

A method for manufacturing of ultrahigh molecular weight polyethylene (UHMWPE) for implants, where the implants have been machined out of UHMWPE blocks or extruded rods, has anthocyanin dispersely imbedded in the polyethylene. The implant is then exposed to γ ray or electron beam irradiation in an amount of at least 2.5 Mrad followed by a heat treatment to prevent the implant from becoming brittle in the long term as well as to improve strength and wear. The method includes mixing a powder or granulate resin of UHMWPE with an aqueous liquid that contains anthocyanin in a predetermined amount. The water is then evaporated in order to deposit the anthocyanin in a predetermined concentration on the polyethylene particles. The doped UHMWPE particles are compressed into blocks at temperatures in a range of approximately 135° C.-250° C. and pressures in a range of approximately 2-70 MPa. Medical implants are made from the blocks.

A coating material of an electron beam curable type is printed or coated onto a substrate of a heat shrinkable plastic film. Then, the coating material is cured by electron beam irradiation to form a coating layer. As a consequence, a shrinkable film including the substrate and the coating layer disposed thereon is obtained.

An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

The invention relates to a method for irradiating partly formed packages (10) with electron beam irradiation from at least one electron beam sterilizing device (18), characterized in that it comprises: providing at least one partly formed package (10) to be irradiated in a gaseous environment, and exposing the gaseous environment to a pre-determined pressure regulation cycle and exposing the partly formed package (10) to irradiation at least during a portion of said pressure regulation cycle. The invention also relates to a device for realizing said method. The invention further relates irradiation of a packaging material web.

There are provided an electron beam application method and an electron beam application device capable of uniformly applying electron beams to an object even if the electron beams have a low energy. For this, electron beams (EB) are applied to a beverage container (30) (object) within a magnetic barrier (MF) formed by combining a plurality of magnetic fields generated in an electron beam application region.

The invention discloses a monomer and polymer for a gel electrolyte material, and preparation methods and applications of the monomer and the polymer. By a gamma ray or electron beam-induced polymerization crosslinking method, a hydrophobic oleophilic monomer and an acrylic ester crosslinking agent are polymerized and crosslinked in an organic solvent containing a lithium salt to obtain a polymer gel electrolyte. Compared with a traditional lithium-ion battery, the lithium-ion battery of using the gel electrolyte has higher ionic conductivity (8.88*10<-3>S cm<-1>); liquid leakage can be effectively prevented; the dangers of explosion, combustion and the like caused by liquid leakage are avoided; and the safety factor is high. Meanwhile, a traditional chemical method is replaced with a gamma ray or electron beam irradiation method, so that the preparation method is simpler, safe, environment-friendly and low in energy consumption and is very suitable for industrialized production.

A vessel sterilizing apparatus includes a vessel conveying unit for conveying a vessel, and an electron beam irradiation unit for irradiating the vessel with an electron beam. The sterilizing apparatus further includes a sterilization area in which the vessel is irradiated with the electron beam, a first chamber surrounding the sterilization area so as to separate the sterilization area from an external portion, a supply area disposed upstream side of the sterilization area in a vessel conveying direction and provided with an opening through which the vessel passes, a second chamber surrounding the supply area so as to separate the supply area from an external portion, and a sterilizing medium supplying unit for supplying a sterilizing medium to the supply area.

A method is presented for effectively manufacturing multi-wall (double-wall, etc.) carbon nanotubes (CNTs) having a structure whereby interior tubes are formed within the CNTs. In this manufacturing method, fullerene/CNT hybrid structures are prepared, wherein assembled fullerenes, these being fullerenes that are linked, have been housed within single-wall CNTs. The interior tubes are formed from the assembled fullerenes by subjecting the hybrid structures to electron beam irradiation while in a heated state. It is preferred that irradiation with the electron beams occurs at a temperature of 100˜500° C. and with the electron beams having an accelerating voltage of 80˜250 kV. According to the manufacturing method of the present invention, multi-wall CNTs with few defects can be manufactured at lower temperatures and in a shorter period than in the case where the fullerene/CNT hybrid structures are only maintained under high temperature conditions (and electron beam irradiation is not performed).