33 results about "Proton implantation" patented technology

A method for producing a semiconductor device includes providing a semiconductor substrate having a first conductivity type; implanting protons through a rear surface of the semiconductor substrate of the first conductivity type; and forming a first semiconductor region of the first conductivity type in the semiconductor substrate by performing an annealing process in an annealing furnace in a hydrogen atmosphere having a volume concentration of hydrogen that is equal to or greater than 0.5% and less than 4.65%, the first semiconductor region having a higher impurity concentration than that of the semiconductor substrate after the implantation step. The method reduces crystal defects in the generation of donors during proton implantation and improves the rate of change into a donor.

The invention discloses a method using proton irradiation to prepare a terminal structure. The method comprises the steps that a main junction and a P type field limiting ring of a chip are prepared on a substrate; an element package structure is prepared on the chip on which the main junction and the P type field limiting ring are formed; after metal electrode deposition is carried out on the chip on which the element package structure is formed, a cathode is formed through etching; after proton implantation is carried out on the chip on which the cathode is formed, an N type well is formed through annealing, and a front process of the chip is finished; and after P type ion implantation is carried out on the back of the chip whose front process is finished to form a P collector, metal electrode deposition is carried out to form an anode and a product is acquired. According to the method using proton irradiation to prepare the terminal structure, which is provided by the invention, voltage withstanding is ensured, and at the same time the chip terminal area is reduced; proton irradiation is used to form donor impurities, and the N type well is formed; the implantation damage is smaller compared with common high energy particle implantation; and the reliability of a device can be improved.

After the front component structure is formed, from n ‑ P-type impurities are ion-implanted into the back surface (11b) of the silicon carbide substrate (11). Next, from n ‑ The back surface (11b) of the silicon carbide substrate (11) is irradiated with laser light to activate the p-type impurities to form a p-type collector layer (4). Next, in n ‑ A barrier metal layer is formed on the back surface (11b) of the silicon carbide substrate (11), and the barrier metal layer is sintered. Next, from n ‑ Proton implantation (16) with a range (17) at a position deeper than the p-type collector layer (4) is performed on the back surface (11b) side of the type silicon carbide substrate (11). Next, n is subjected to furnace annealing ‑ The entire silicon carbide substrate (11) is heated to convert protons into donors to form n-type silicon carbide substrates (11). + type field cutoff layer (3). At this time, n is reduced by reducing the disorder remaining in the proton passage region (14). ‑ Crystal state recovery of type silicon carbide substrate (11). This makes it possible to stably avoid electrical characteristic defects.

The present invention relates to methods for forming semiconductor devices and semiconductor devices. A method for forming a semiconductor device includes implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of a defined dose of protons and a defined temperature profile is selected depending on a carbon-related parameter indicative of information about a carbon concentration within at least a portion of the semiconductor substrate.