8 results about "Proton implantation" patented technology

This invention belongs to the field of optical functional thin film materials, specifically relating to a silicon-oxygen-aluminum ternary composite optical coating material and its preparation method. Addressing the problem in existing technologies of achieving high transmittance, high hardness, and corrosion resistance synergistically within a single ternary material system, this invention utilizes a single-crystal thin film with a completely ordered single-phase structure epitaxially grown on a MgAl2O4 spinel single-crystal substrate, co-doped with transition metal ions and protons. Employing a combined laser molecular beam epitaxy and low-temperature proton implantation technique, alternatingly ablates the silicon target, aluminum target, and doped target, and simultaneously irradiating with a low-energy hydrogen ion beam under ultra-high vacuum, atomic-level epitaxial growth and in-situ proton embedding are achieved, resulting in a unified high transmittance, high hardness, and corrosion resistance.

The application provides a compact proton injector, comprising an ion source system, an RFQ and an IH-DTL connected in sequence, the working frequency of the RFQ and the IH-DTL is 714MHz, so that the total length of the RFQ and the IH-DTL is less than 3 meters, and the beam output energy of the IH-DTL is higher than 8MeV. The working frequency of the compact proton injector is set to 714MHz, so that the acceleration gradient of the IH-DTL can be increased to 9MV / m, and the acceleration gradient of the RFQ reaches 2MV / m, so that the total length of the RFQ and the IH-DTL is less than 3 meters, thereby reducing the volume and weight of the injector and reducing the construction cost.

A silicon carbide field-effect transistor is doped with protons to reduce interface defects, and a method of proton doping a silicon carbide field-effect transistor is provided to reduce interface defects. Various FET structures (e.g., source, body, well) may be implanted in a drift region at a first end of a volume of semiconductor material. A drain may be provided (e.g., at a second end of the volume of semiconductor material). In a first example, protons (H+ ions) may be implanted to create a doped region at the first end prior to depositing a dielectric material associated with a gate. The resulting doped interface region underlying the dielectric material exhibits a reduction in trapped charges. In a second example, the dielectric material is deposited prior to proton implantation. The resulting doped interface region exhibits the reduction in trapped charges, and the dielectric material exhibits a reduction in mobile ionic charges.

A method for manufacturing a semiconductor device comprising: introducing at least one first dopant into a semiconductor body (102) through a first surface (104) of the semiconductor body (102); and subsequently performing one or more proton implantations; introducing a second dopant into the semiconductor body (102) through the second surface (106) using a plasma-based ion implantation method, wherein the plasma-based ion implantation method is carried out with a complex of the second dopant and hydrogen as the process gas, and hydrogen of the complex is introduced into the semiconductor body (102) through the second surface (106) in addition to the second dopant, wherein the hydrogen is introduced into the semiconductor body in addition to the one or more proton implantations; and activating hydrogen-correlated donors.

The invention provides an InP-based optical communication laser high-speed modulation stability improving process and a laser, and relates to the technical field of laser processes. The method comprises the following steps: preparing an epitaxial wafer, forming a distributed feedback grating and a quarter-wave phase shift region, etching a ridge-shaped main active strip, forming long and narrow injection windows on two sides, injecting dual-energy protons, performing rapid thermal annealing, forming a Fe-doped InP semi-insulating embedded current limiting structure and preparing a coplanar waveguide electrode in sequence. And constructing a carrier pressure relief gallery with a central region, a transition region and an end region which are longitudinally distributed on two sides of the main active strip. According to the structure, during high-speed direct modulation, excessive carriers in the main active region enter the deep energy level defect region through the non-injection connection region and are subjected to non-radiative recombination, so that the carrier space peak value is reduced, refractive index disturbance and output optical power fluctuation are reduced, and the high-speed modulation stability is improved; and the high-speed optical communication transmitter is suitable for high-speed optical communication transmitters and has both single-mode output and wide-temperature working reliability.

The invention belongs to the field of optical functional film materials, and particularly relates to a silicon-oxygen-aluminum-based ternary composite optical coating material and a preparation method thereof. The problems that in the prior art, high light transmittance, high hardness and corrosion resistance are difficult to synergistically achieve in a single ternary material system are solved. According to the invention, a single-crystal film which is epitaxially grown on an MgAl2O4 spinel single-crystal substrate and has a completely ordered single-phase structure is co-doped with transition metal ions and protons, a laser molecular beam epitaxy and low-temperature proton injection combined technology is adopted, and a silicon target, an aluminum target and a doped target are alternately ablated, so that the performance of the single-crystal film is improved. And low-energy hydrogen ion beams are used for synchronous irradiation under ultrahigh vacuum, so that atomic level epitaxial growth and proton in-situ embedding are realized, and unification of high light transmission, high hardness and corrosion resistance is realized.

A silicon carbide field-effect transistor is doped with protons to reduce interface defects, and a method of proton doping a silicon carbide field-effect transistor is provided to reduce interface defects. Various FET structures (e.g., source, body, well) may be implanted in a drift region at a first end of a volume of semiconductor material. A drain may be provided (e.g., at a second end of the volume of semiconductor material). In a first example, protons (H+ ions) may be implanted to create a doped region at the first end prior to depositing a dielectric material associated with a gate. The resulting doped interface region underlying the dielectric material exhibits a reduction in trapped charges. In a second example, the dielectric material is deposited prior to proton implantation. The resulting doped interface region exhibits the reduction in trapped charges, and the dielectric material exhibits a reduction in mobile ionic charges.

Method of manufacturing a semiconductor device comprising the semiconductor device: a semiconductor substrate (1); a p-type layer (2, 13) formed on a surface of the semiconductor substrate (1); and first and second n-type buffer layers (8, 9) formed on a rear surface of the semiconductor substrate (1), wherein the first n-type buffer layer (8) is formed by a plurality of proton implantations at different accelerating voltages and has a plurality of peak concentrations at different depths from the back surface of the semiconductor substrate (1), the second n-type buffer layer (9) is formed by implantation of phosphorus, a position of maximum phosphorus concentration flatter from the back surface of the semiconductor substrate (1) than positions of maximum proton concentrations, the maximum concentration of phosphorus is higher than the maximum concentrations of protons, and at the positions of highest proton concentrations, the concentration of protons is higher than the concentration of phosphorus, whereby the first n-type buffer layer (8) is formed by performing the majority of proton implantations at different accelerating voltages using an ion implanter for semiconductor fabrication, the majority of maximum proton concentrations are located at a depth of 6 µm or more and 30 µm or less from the rear surface of the semiconductor substrate (1), and wherein an implantation scope of a profile with a highest acceleration voltage and an implantation scope of a profile with a next highest acceleration voltage are the same among the majority of proton implantations.