13 results about "Proton implantation" patented technology

This invention belongs to the field of optical functional thin film materials, specifically relating to a silicon-oxygen-aluminum ternary composite optical coating material and its preparation method. Addressing the problem in existing technologies of achieving high transmittance, high hardness, and corrosion resistance synergistically within a single ternary material system, this invention utilizes a single-crystal thin film with a completely ordered single-phase structure epitaxially grown on a MgAl2O4 spinel single-crystal substrate, co-doped with transition metal ions and protons. Employing a combined laser molecular beam epitaxy and low-temperature proton implantation technique, alternatingly ablates the silicon target, aluminum target, and doped target, and simultaneously irradiating with a low-energy hydrogen ion beam under ultra-high vacuum, atomic-level epitaxial growth and in-situ proton embedding are achieved, resulting in a unified high transmittance, high hardness, and corrosion resistance.

The application provides a compact proton injector, comprising an ion source system, an RFQ and an IH-DTL connected in sequence, the working frequency of the RFQ and the IH-DTL is 714MHz, so that the total length of the RFQ and the IH-DTL is less than 3 meters, and the beam output energy of the IH-DTL is higher than 8MeV. The working frequency of the compact proton injector is set to 714MHz, so that the acceleration gradient of the IH-DTL can be increased to 9MV / m, and the acceleration gradient of the RFQ reaches 2MV / m, so that the total length of the RFQ and the IH-DTL is less than 3 meters, thereby reducing the volume and weight of the injector and reducing the construction cost.

The invention relates to an FRD device proton irradiation processing method based on an epitaxial structure, and belongs to the technical field of semiconductor manufacturing, and the method comprises the steps: S100, obtaining an FRD device based on the epitaxial structure; s200, proton irradiation is carried out on the FRD device based on the epitaxial structure to obtain a proton irradiation FRD device, the proton irradiation FRD device comprises proton injection regions, the proton injection regions are located at the contact interface of the lightly doped N-layer and the heavily doped N + layer, the proton injection regions comprise a first proton injection region and a second proton injection region, and the first proton injection region and the second proton injection region are located at the contact interface of the lightly doped N-layer and the heavily doped N + layer; the first proton injection region is partially located in the lightly doped N-layer, and the second proton injection region is partially located in the heavily doped N + layer; and S300, carrying out annealing treatment on the proton irradiation FRD device to obtain the proton irradiation treatment FRD device. According to the invention, the reverse recovery time of the FRD device can be shortened, and the softness factor of the FRD device can be synchronously optimized.

The present invention discloses a proton Flash therapy device based on a linear induction accelerator, which includes a proton injector, a linear induction acceleration mechanism, a beam current regulation mechanism, a radiation dose rate measurement system, a pulse power source system, and a pulse transmission system; the linear induction acceleration mechanism is configured to be connected to the proton injector; the beam current regulation mechanism is configured to be connected to the linear induction acceleration mechanism; the radiation dose rate measurement system is used to measure and monitor the dose rate of the proton beam passing through the beam current regulation mechanism in real time; the pulse power source system is used to provide pulse power for the proton injector and the linear induction acceleration mechanism; the pulse transmission system is used to effectively transmit the pulse power generated in the pulse power source system to the proton injector and the linear induction acceleration mechanism; the proton Flash therapy device based on the linear induction accelerator has a simple structure and is suitable for popularization and use in major hospitals.

A silicon carbide field-effect transistor is doped with protons to reduce interface defects, and a method of proton doping a silicon carbide field-effect transistor is provided to reduce interface defects. Various FET structures (e.g., source, body, well) may be implanted in a drift region at a first end of a volume of semiconductor material. A drain may be provided (e.g., at a second end of the volume of semiconductor material). In a first example, protons (H+ ions) may be implanted to create a doped region at the first end prior to depositing a dielectric material associated with a gate. The resulting doped interface region underlying the dielectric material exhibits a reduction in trapped charges. In a second example, the dielectric material is deposited prior to proton implantation. The resulting doped interface region exhibits the reduction in trapped charges, and the dielectric material exhibits a reduction in mobile ionic charges.

The present invention relates to a vertical cavity surface emitting laser array, a manufacturing method thereof, a chip, and a lidar. The method includes: providing an epitaxial layer including a first mirror, an active layer, and a second mirror sequentially stacked on a substrate; performing mesa etching on the epitaxial layer to form a first trench; forming a first electrode in the first trench; forming a first passivation layer covering the first electrode; performing proton implantation to form a proton implantation region; forming a second passivation layer covering the first passivation layer; forming a metal wiring layer for electrically connecting a plurality of second electrodes, and insulating and isolating the metal wiring layer from the first electrode through the first passivation layer and the second passivation layer. The first passivation layer of the present invention adopts a relatively thin thickness to reduce its blocking effect on the proton implantation for forming the proton implantation region, and the two-layer passivation layer structure can avoid poor passivation layer quality, thereby ensuring effective isolation between the metal wiring layer and the first electrode and reducing the risk of device failure and short circuit.

A method for manufacturing a semiconductor device comprising: introducing at least one first dopant into a semiconductor body (102) through a first surface (104) of the semiconductor body (102); and subsequently performing one or more proton implantations; introducing a second dopant into the semiconductor body (102) through the second surface (106) using a plasma-based ion implantation method, wherein the plasma-based ion implantation method is carried out with a complex of the second dopant and hydrogen as the process gas, and hydrogen of the complex is introduced into the semiconductor body (102) through the second surface (106) in addition to the second dopant, wherein the hydrogen is introduced into the semiconductor body in addition to the one or more proton implantations; and activating hydrogen-correlated donors.

The present invention discloses a medical proton accelerator and a radiotherapy system, which relate to the technical field of radiotherapy. The medical proton accelerator includes an ion source, a terahertz source, a dielectric acceleration structure, a proton injection section, and a proton extraction section. The ion source is used to generate a proton beam; the terahertz source is used to generate high-power terahertz waves; the terahertz waves are transmitted in the dielectric acceleration structure and generate a high-gradient accelerating electric field for accelerating the proton beam to a preset energy value; the proton injection section is arranged between the ion source and the dielectric acceleration structure and is used to introduce the proton beam from the ion source into the dielectric acceleration structure; the proton extraction section is used to extract the proton beam accelerated to the preset energy value to an external treatment device. The radiotherapy system includes the medical proton accelerator, a power supply, and a treatment head, and the treatment head is used to direct the proton beam to a target treatment position. Compared with the prior art, the medical proton accelerator and the radiotherapy system proposed by the present invention have the advantages of small volume scale and adjustable proton beam energy.

The invention provides an InP-based optical communication laser high-speed modulation stability improving process and a laser, and relates to the technical field of laser processes. The method comprises the following steps: preparing an epitaxial wafer, forming a distributed feedback grating and a quarter-wave phase shift region, etching a ridge-shaped main active strip, forming long and narrow injection windows on two sides, injecting dual-energy protons, performing rapid thermal annealing, forming a Fe-doped InP semi-insulating embedded current limiting structure and preparing a coplanar waveguide electrode in sequence. And constructing a carrier pressure relief gallery with a central region, a transition region and an end region which are longitudinally distributed on two sides of the main active strip. According to the structure, during high-speed direct modulation, excessive carriers in the main active region enter the deep energy level defect region through the non-injection connection region and are subjected to non-radiative recombination, so that the carrier space peak value is reduced, refractive index disturbance and output optical power fluctuation are reduced, and the high-speed modulation stability is improved; and the high-speed optical communication transmitter is suitable for high-speed optical communication transmitters and has both single-mode output and wide-temperature working reliability.

The invention belongs to the field of optical functional film materials, and particularly relates to a silicon-oxygen-aluminum-based ternary composite optical coating material and a preparation method thereof. The problems that in the prior art, high light transmittance, high hardness and corrosion resistance are difficult to synergistically achieve in a single ternary material system are solved. According to the invention, a single-crystal film which is epitaxially grown on an MgAl2O4 spinel single-crystal substrate and has a completely ordered single-phase structure is co-doped with transition metal ions and protons, a laser molecular beam epitaxy and low-temperature proton injection combined technology is adopted, and a silicon target, an aluminum target and a doped target are alternately ablated, so that the performance of the single-crystal film is improved. And low-energy hydrogen ion beams are used for synchronous irradiation under ultrahigh vacuum, so that atomic level epitaxial growth and proton in-situ embedding are realized, and unification of high light transmission, high hardness and corrosion resistance is realized.

The power semiconductor device includes a semiconductor body having a front side and a back side, which includes a drift region of a first conductivity type; a field stop region of the first conductivity type, arranged between the drift region and the back side and having a dopant with a higher dopant concentration than the drift region, created by proton implantation via the back side; and an emitter adjustment region of the first conductivity type, arranged between the field stop region and the back side and having a dopant with a higher dopant concentration than the field stop region. The field stop region includes a dopant concentration profile presenting a first local maximum and a first local minimum, the first local minimum being arranged between the first local maximum and another local maximum of the dopant concentration profile of the field stop region and / or between the first local maximum and the maximum of the dopant concentration profile of the emitter adjustment region, the dopant concentration at the first local maximum being at most three times as high as the dopant concentration at the first local minimum, and the semiconductor body is or includes a semiconductor substrate having an interstitial oxygen concentration of at least 1E17 cm<supgt;‑3< / supgt>.

A silicon carbide field-effect transistor is doped with protons to reduce interface defects, and a method of proton doping a silicon carbide field-effect transistor is provided to reduce interface defects. Various FET structures (e.g., source, body, well) may be implanted in a drift region at a first end of a volume of semiconductor material. A drain may be provided (e.g., at a second end of the volume of semiconductor material). In a first example, protons (H+ ions) may be implanted to create a doped region at the first end prior to depositing a dielectric material associated with a gate. The resulting doped interface region underlying the dielectric material exhibits a reduction in trapped charges. In a second example, the dielectric material is deposited prior to proton implantation. The resulting doped interface region exhibits the reduction in trapped charges, and the dielectric material exhibits a reduction in mobile ionic charges.

Method of manufacturing a semiconductor device comprising the semiconductor device: a semiconductor substrate (1); a p-type layer (2, 13) formed on a surface of the semiconductor substrate (1); and first and second n-type buffer layers (8, 9) formed on a rear surface of the semiconductor substrate (1), wherein the first n-type buffer layer (8) is formed by a plurality of proton implantations at different accelerating voltages and has a plurality of peak concentrations at different depths from the back surface of the semiconductor substrate (1), the second n-type buffer layer (9) is formed by implantation of phosphorus, a position of maximum phosphorus concentration flatter from the back surface of the semiconductor substrate (1) than positions of maximum proton concentrations, the maximum concentration of phosphorus is higher than the maximum concentrations of protons, and at the positions of highest proton concentrations, the concentration of protons is higher than the concentration of phosphorus, whereby the first n-type buffer layer (8) is formed by performing the majority of proton implantations at different accelerating voltages using an ion implanter for semiconductor fabrication, the majority of maximum proton concentrations are located at a depth of 6 µm or more and 30 µm or less from the rear surface of the semiconductor substrate (1), and wherein an implantation scope of a profile with a highest acceleration voltage and an implantation scope of a profile with a next highest acceleration voltage are the same among the majority of proton implantations.