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Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array

A grid electrode, coupled array technology, applied in circuits, lasers, electrical components, etc., can solve problems such as uneven current expansion, achieve high optical power, and improve beam quality.

Active Publication Date: 2016-06-08
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Based on the above problems, the object of the present invention is to provide a double-grid electrode structure for high-beam quality and high-power VCSEL arrays, which can not only solve the problem of uneven current expansion, but also solve the problem of a single grid electrode suppressing the output of the in-phase mode Problem, can make the VCSEL array obtain high beam quality and high power in-phase coupling output

Method used

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  • Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array
  • Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array
  • Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array

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Embodiment Construction

[0028] Combine below Figure 4-Figure 12 The specific implementation methods of high-beam quality and high-power VCSEL in-phase coupling array and double grid electrodes are introduced respectively;

[0029] Step 1. Using metal-organic chemical vapor deposition (MOCVD) to sequentially epitaxially grow thirty-four pairs of n-Al on N-GaAs (0.12-0.9) GaAs and n-Al 0.9 GaAs forms the DBR mirror, Al (0.12-0.9) GaAs / Al 0.9 GaAs lower confinement layer, three pairs of Al 0.3 GaAs / GaAs quantum well structure active region, Al 0.9 GaAs / Al (0.12-0.9) GaAs upper confinement layer, 22.5 to p-Al 0.12 GaAs and p-Al (0.9-0.12) GaAs forms the DBR mirror, p-Al 0.12 GaAs and p-GaAs heavily doped contact layers;

[0030] Step 2, using plasma-enhanced chemical vapor deposition (PECVD) to grow a layer of 3 μm silicon dioxide on the surface of the epitaxial wafer obtained above;

[0031] Step 3. Use reverse glue to do photolithography and sputtering process to sputter a layer of silicon d...

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Abstract

The invention discloses a double-grid electrode for a high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array. By adoption of the double-grid electrode, the problem of non-uniform current spreading of the large-scale VCSEL array can be solved, and simultaneously the problem of same-phase mode absorption in the traditional single-grid electrode also can be solved, so that the array can obtain high-power same-phase output. The double-grid electrode comprises a large electrode with an external frame and an electrode with double internal grids. The double-grid electrode disclosed by the invention has the advantages that the VCSEL array is prepared by adopting a multiple-proton implantation mode, the problem of mode absorption in the single-grid electrode can be solved by reasonably designing the spacing of array elements and the novel double-grid electrode, and high-power output can be obtained while guaranteeing same-phase laser output, so that the beam quality of the array is greatly improved; and the double-grid electrode can be applied in the fields such as free-space optical interconnection, laser radar, laser printing, optical-fiber communication and optical pumping and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a double grid electrode used for high-beam quality and high-power VCSEL in-phase coupling arrays. Background technique [0002] Due to the wide application of high-beam quality and high-power VCSEL arrays in free-space optical interconnection, laser radar, laser printing, optical fiber communication, optical pumping and other fields, it has attracted much attention in the past few decades. In order to obtain a high power output of the VCSEL array, the traditional method is to increase the array scale, but as the array scale increases, the current expansion will be uneven, resulting in the failure of the cells far from the electrodes to be lased. In order to solve the problem of uneven current spreading, a single grid electrode is proposed, such as figure 1 shown. Although the single grid electrode solves the problem of uneven current spread, but because...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/42
CPCH01S5/0425H01S5/423
Inventor 徐晨潘冠中荀孟蒋国庆解意洋
Owner BEIJING UNIV OF TECH
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