Double-grid electrode for high-beam-quality large-power VCSEL (Vertical Cavity Surface Emitting Laser) same-phase coupling array
A grid electrode, coupled array technology, applied in circuits, lasers, electrical components, etc., can solve problems such as uneven current expansion, achieve high optical power, and improve beam quality.
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[0028] Combine below Figure 4-Figure 12 The specific implementation methods of high-beam quality and high-power VCSEL in-phase coupling array and double grid electrodes are introduced respectively;
[0029] Step 1. Using metal-organic chemical vapor deposition (MOCVD) to sequentially epitaxially grow thirty-four pairs of n-Al on N-GaAs (0.12-0.9) GaAs and n-Al 0.9 GaAs forms the DBR mirror, Al (0.12-0.9) GaAs / Al 0.9 GaAs lower confinement layer, three pairs of Al 0.3 GaAs / GaAs quantum well structure active region, Al 0.9 GaAs / Al (0.12-0.9) GaAs upper confinement layer, 22.5 to p-Al 0.12 GaAs and p-Al (0.9-0.12) GaAs forms the DBR mirror, p-Al 0.12 GaAs and p-GaAs heavily doped contact layers;
[0030] Step 2, using plasma-enhanced chemical vapor deposition (PECVD) to grow a layer of 3 μm silicon dioxide on the surface of the epitaxial wafer obtained above;
[0031] Step 3. Use reverse glue to do photolithography and sputtering process to sputter a layer of silicon d...
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