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A method for efficiently eliminating the wrinkles of graphene by chemical vapor deposition

A technology of chemical vapor deposition and graphene, which is applied in chemical instruments and methods, graphene, inorganic chemistry, etc., can solve the problems of uneven mass distribution of graphene film, reduce the oxidation resistance of graphene, etc., and achieve less defects and better surface Ultra-flattening, wrinkle-reducing effect

Active Publication Date: 2022-03-25
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The wrinkled area is more likely to introduce some vacancy defects, which reduces the oxidation resistance of graphene and leads to uneven mass distribution of graphene film

Method used

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  • A method for efficiently eliminating the wrinkles of graphene by chemical vapor deposition
  • A method for efficiently eliminating the wrinkles of graphene by chemical vapor deposition
  • A method for efficiently eliminating the wrinkles of graphene by chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Grown wrinkle-free graphene on a copper substrate by plasma assistance, specifically: a smooth copper film (plated on sapphire), placed in a tube furnace and heated to 1000 ° C and maintained for 40 minutes to obtain relatively smooth copper surface. Put the copper substrate into the plasma-assisted chemical vapor deposition system, pass hydrogen and methane in the ratio of 20:1 (total gas flow is 200sccm), stabilize the pressure of the reaction chamber to 10Pa through the pressure regulating valve, and heat it to 500~800℃ , and keep it for 1 to 10 minutes. Start the inductively coupled plasma generator, adjust the power to 10-50W, and control the grain size and growth rate of the graphene film by changing the plasma power and time. Generally, a single-layer, wrinkle-free film can be obtained after 2-5 minutes of growth. Graphene film. After the growth is completed, cool down naturally, and turn off the gas when the temperature drops to near room temperature.

[0039...

Embodiment 2

[0041] The difference from Example 1 is that:

[0042] Grown wrinkle-free graphene on a copper substrate by plasma assistance, specifically: a smooth copper film (plated on sapphire), placed in a tube furnace and heated to 1000 ° C and maintained for 40 minutes to obtain relatively smooth copper surface. Put the copper substrate into the plasma-assisted chemical vapor deposition system, feed hydrogen and methane in a ratio of 20:1 (in this embodiment, the total gas flow can be 50-1000sccm), and stabilize the pressure of the reaction chamber through a pressure regulating valve is 10Pa, heated to 500-800°C, and kept for 30m minutes (in this embodiment, the keeping time can be between 5min-2h). Start the inductively coupled plasma generator, adjust the power to 10-50W, and control the grain size and growth rate of the graphene film by changing the plasma power and time. Generally, a single-layer, wrinkle-free film can be obtained after 2-5 minutes of growth. Graphene film (in t...

Embodiment 3

[0045] The difference from Example 1 is that:

[0046] Grown wrinkle-free graphene on a nickel substrate by plasma assistance (in this embodiment, the substrate uses nickel, platinum, gold, silver, rhodium, iridium, ruthenium and other metal and alloy thin films, taking nickel as an example) , specifically: a smooth nickel film (plated on sapphire), placed in a tube furnace and heated to 1000° C. and maintained for 40 minutes to obtain a relatively smooth nickel surface. Put the nickel substrate into the plasma-assisted chemical vapor deposition system, pass hydrogen and methane in a ratio of 40:1 (total gas flow is 200sccm), stabilize the pressure of the reaction chamber to 10Pa through a pressure regulating valve, and heat it to 500-800℃ , and keep it for 1 to 10 minutes. Start the inductively coupled plasma generator, adjust the power to 10-50W, and control the grain size and growth rate of the graphene film by changing the plasma power and time. Generally, a single-layer,...

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Abstract

A method for efficiently eliminating the wrinkles of graphene by chemical vapor deposition, using controllable proton injection in a high-temperature environment, through precise control of the temperature environment and the hydrogen plasma power and time for generating protons, on various metals such as copper and nickel and Its alloys, on various non-metal substrates such as silicon oxide and silicon carbide, directly grow wrinkle-free ultra-flat graphene films, or eliminate wrinkles on wrinkled graphene; the plasma-assisted chemical vapor deposition system includes Plasma generator, vacuum system, and heating system; among them, the power of the plasma generator is 5-1000W, and the vacuum system is 10 ‑5 ~10 5 Pa, the controllable heating temperature range of the system is 25-1000°C; protons are injected into various substrates at the same time, and ultra-smooth non-wrinkled graphene is directly grown, including proton injection of wrinkled graphene grown by traditional methods Post-processing to reduce and eliminate wrinkles.

Description

Technical field: [0001] The invention relates to the field of graphene growth, in particular to a new method for efficiently eliminating wrinkles of chemical vapor deposition graphene. Background technique: [0002] In 2004, the research group of Andre Geim of the University of Manchester in the United Kingdom used the tape peeling method (or micromechanical peeling method) to obtain stable graphene for the first time. Graphene's unique two-dimensional crystal structure gives it excellent electrical, thermal and mechanical properties, and is believed to have broad applications in transparent conductive films, transistors, functional composites, energy storage, catalysis and other fields. Therefore, it is very important to find a suitable method to prepare large-area high-quality graphene films to realize the industrialization of graphene applications. [0003] At present, a variety of methods for preparing graphene have been developed one after another, including mechanical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194C01B2202/02C01P2002/82C01P2004/03C01P2004/04C23C16/26C23C16/46C23C16/50C23C16/52H01J37/321H01J37/32816H01J2237/3321
Inventor 高力波袁国文徐洁
Owner NANJING UNIV
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